NIR, SWIR, MWIR, and LWIR are different design spaces
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
OPTOStokes is the optical filter brand at Optofilters.com, supplying stock and custom-coated filters for UV, VIS, NIR and IR applications.
Review infrared filters for NIR, SWIR, MWIR, and LWIR systems. Compare mid infrared bandpass filters, far infrared filters, silicon infrared filters, sapphire IR filters, germanium AR coated windows, and metallized IR windows for sensing and imaging instruments.
Choose by infrared region first, then confirm detector sensitivity, substrate transmission, coating band, environmental exposure, and mounting requirements. IR filters often need material choices that differ from visible filters.
OPTOStokes IR filters cover near-infrared (750-1100nm), SWIR 1.1-2.5µm, MWIR 3-5µm, and LWIR 8-14µm applications. The catalog also includes mid/far IR narrow bandpass filters, wide bandpass filters, infrared longpass filters, AR coatings, and metallized IR windows for thermal imaging, gas sensing, spectroscopy, and detector packaging.
| Model | CWL (nm) | Transmittance | FWHM (nm) | Optical Density |
|---|---|---|---|---|
| STO-BP680 | 680 ± 2 | T≥90% | 10-20 | OD≥3@300-1100 |
| STO-BP1120 | 1120 ± 2 | T≥90% | 10-20 | OD≥3@300-1200 |
| STO-BP1150 | 1150 ± 2 | T≥90% | 10-20 | OD≥3@300-1200 |
| STO-BP1173 | 1173 ± 2 | T≥90% | 10-20 | OD≥3@300-1200 |
| STO-BP1250 | 1250 ± 2 | T≥70% | 10-20 | OD≥3@700-1800 |
| STO-BP1285 | 1285 ± 2 | T≥70% | 10-20 | OD≥3@1000-1700 |
| STO-BP1455 | 1455 ± 2 | T≥50% | 10-20 | OD≥3@1200-1800 |
| STO-BP1535 | 1535 ± 2 | T≥90% | 10-20 | OD≥3@600-2000 |
| STO-BP1545 | 1545 ± 2 | T≥90% | 10-20 | OD≥3@600-2000 |
| STO-BP1550 | 1550 ± 2 | T≥90% | 10-20 | OD≥3@600-2000 |
| STO-BP1555 | 1555 ± 2 | T≥90% | 10-20 | OD≥3@600-2000 |
| STO-BP1570 | 1570 ± 2 | T≥90% | 10-20 | OD≥3@1250-1700 |
| STO-BP1615 | 1615 ± 2 | T≥90% | 10-20 | OD≥3@1450-1900 |
| STO-BP1620 | 1620 ± 2 | T≥70% | 10-20 | OD≥3@1450-1900 |
| STO-BP1625 | 1625 ± 2 | T≥70% | 10-20 | OD≥3@1450-1900 |
| STO-BP1655 | 1655 ± 5 | T≥70% | 10-20 | OD≥3@1350-2200 |
| STO-BP1660 | 1660 ± 5 | T≥70% | 10-20 | OD≥3@1350-2200 |
| STO-BP1680 | 1680 ± 10 | T≥90% | 10-20 | OD≥3@800-3000 |
| STO-BP1685 | 1685 ± 2 | T≥80% | 10-20 | OD≥3@1550-2000 |
| STO-BP1695 | 1695 ± 2 | T≥80% | 10-20 | OD≥3@1550-2000 |
| STO-BP1935 | 1935 ± 2 | T≥60% | 10-20 | OD≥3@800-2000 |
| STO-BP1940 | 1940 ± 2 | T≥60% | 10-20 | OD≥3@800-2000 |
| STO-BP2050 | 2050 ± 2 | T≥80% | 10-20 | OD≥3@800-2000 |
| STO-BP2180 | 2180 ± 2 | T≥80% | 10-20 | OD≥3@800-2000 |
| STO-BP2230 | 2230 ± 2 | T≥80% | 10-20 | OD≥3@800-2000 |
| STO-BP2270 | 2270 ± 2 | T≥80% | 10-20 | OD≥3@800-2000 |
| STO-BP2340 | 2340 ± 2 | T≥80% | 10-20 | OD≥3@800-2000 |
| STO-BP1100 | 1100 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1120 | 1120 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1125 | 1125 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1150 | 1150 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1173 | 1173 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1200 | 1200 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1235 | 1235 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1245 | 1245 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1250 | 1250 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1290 | 1290 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1300 | 1300 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1320 | 1320 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1340 | 1340 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1380 | 1380 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1430 | 1430 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1445 | 1445 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1450 | 1450 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1530 | 1530 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1535 | 1535 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1540 | 1540 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1550 | 1550 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1570 | 1570 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1575 | 1575 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1600 | 1600 ± 5 | T≥90% | 90-100 | OD≥3@350-1700 |
| STO-BP1610 | 1610 ± 5 | T≥90% | 90-100 | OD≥3@350-1700 |
| STO-BP1630 | 1630 ± 5 | T≥90% | 90-100 | OD≥3@350-1700 |
| STO-BP1650 | 1650 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1654 | 1654 ± 5 | T≥90% | 20-60 | OD≥3@350-1700 |
| STO-BP1660 | 1660 ± 5 | T≥90% | 20-60 | OD≥3@800-3000 |
| STO-BP1680 | 1680 ± 5 | T≥90% | 20-60 | OD≥3@800-3000 |
| STO-BP1700 | 1700 ± 5 | T≥90% | 90-100 | OD≥3@800-2000 |
| STO-BP1714 | 1714 ± 5 | T≥90% | 90-100 | OD≥3@800-2000 |
| STO-BP1716 | 1716 ± 5 | T≥90% | 90-100 | OD≥3@800-2000 |
| STO-BP1780 | 1780 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1800 | 1800 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1810 | 1810 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1818 | 1818 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1830 | 1830 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1920 | 1920 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1930 | 1930 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1935 | 1935 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1940 | 1940 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1945 | 1945 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| STO-BP1950 | 1950 ± 5 | T≥90% | 40-70 | OD≥3@200-3000 |
| Model | Cut-On (nm) | Transmittance | Transmission Range (nm) | Optical Density |
|---|---|---|---|---|
| STO-LP900 | 900 ± 5 | T≥90% | 910-1100 | OD≥3@350-880 |
| STO-LP910 | 910 ± 5 | T≥90% | 920-1100 | OD≥3@350-890 |
| STO-LP920 | 920 ± 5 | T≥90% | 930-1100 | OD≥3@350-900 |
| STO-LP920 | 920 ± 10 | T≥90% | 940-1700 | OD≥3@350-890 |
| STO-LP930 | 930 ± 5 | T≥90% | 940-1100 | OD≥3@350-910 |
| STO-LP940 | 940 ± 5 | T≥90% | 950-1100 | OD≥3@350-920 |
| STO-LP950 | 950 ± 5 | T≥90% | 970-1100 | OD≥3@350-930 |
| STO-LP970 | 970 ± 5 | T≥90% | 980-1100 | OD≥3@350-940 |
| STO-LP1000 | 1000 ± 10 | T≥90% | 1020-2000 | OD≥3@350-970 |
| STO-LP1010 | 1010 ± 10 | T≥90% | 1030-1200 | OD≥3@350-990 |
| STO-LP1060 | 1060 ± 10 | T≥88% | 1085-1100 | OD≥3@350-1035 |
| STO-LP1150 | 1150 ± 10 | T≥90% | 1180-1700 | OD≥3@700-1120 |
| STO-LP1170 | 1170 ± 10 | T≥90% | 1200-1700 | OD≥3@700-1135 |
| STO-LP1200 | 1200 ± 10 | T≥90% | 1230-1800 | OD≥3@350-1175 |
| STO-LP1250 | 1250 ± 10 | T≥90% | 1260-1750 | OD≥3@350-1215 |
| STO-LP1270 | 1270 ± 10 | T≥90% | 1300-1800 | OD≥3@350-1240 |
| STO-LP1380 | 1380 ± 10 | T≥90% | 1400-2150 | OD≥3@700-1360 |
| STO-LP1400 | 1400 ± 10 | T≥90% | 1420-1100 | OD≥3@350-1380 |
| STO-LP1450 | 1450 ± 10 | T≥90% | 1480-1800 | OD≥3@350-1420 |
| STO-LP1470 | 1470 ± 10 | T≥90% | 1500-1800 | OD≥3@350-1400 |
| STO-LP1600 | 1600 ± 10 | T≥90% | 1625-2300 | OD≥3@350-1540 |
Mid and far infrared narrow bandpass filters use silicon, sapphire, germanium, calcium fluoride, and zinc selenide substrates for MWIR and LWIR instrument bands. Custom sizes are available for detector modules and thermal sensing systems.
| Model | IR Region | CWL (nm) | FWHM (nm) | Peak Transmittance | Blocking | Substrate | Size |
|---|---|---|---|---|---|---|---|
| STO-NBP 2750 500nm | MWIR | 2750 ± 50 | 500 ± 60 | >=80% | 400-7000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2775 250nm | MWIR | 2775 ± 30 | 250 ± 20 | >=80% | 400-7000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2850 400nm | MWIR | 2850 ± 40 | 400 ± 30 | >=80% | 400-7000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3080 140nm | MWIR | 3080 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3090 140nm | MWIR | 3090 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3280 160nm | MWIR | 3280 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3310 60nm | MWIR | 3310 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 60nm | MWIR | 3330 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 160nm | MWIR | 3330 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3400 120nm | MWIR | 3400 ± 30 | 120 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3400 180nm | MWIR | 3400 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3420 180nm | MWIR | 3420 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3440 120nm | MWIR | 3440 ± 30 | 120 ± 20 | >=80% | 400-25000nm,T≤1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 3440 160nm | MWIR | 3440 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3460 150nm | MWIR | 3460 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3800 300nm | MWIR | 3800 ± 40 | 300 ± 30 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3900 90nm | MWIR | 3900 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3920 90nm | MWIR | 3920 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 3970 90nm | MWIR | 3970 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4000 90nm | MWIR | 4000 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4050 180nm | MWIR | 4050 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4100 180nm | MWIR | 4100 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4200 180nm | MWIR | 4200 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4230 160nm | MWIR | 4230 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | 2.9 x 2.9 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 4280 180nm | MWIR | 4280 ± 20 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 130nm | MWIR | 4300 ± 30 | 130 ± 20 | >=75% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4300 160nm | MWIR | 4300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 180nm | MWIR | 4300 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4320 160nm | MWIR | 4320 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4330 130nm | MWIR | 4330 ± 30 | 130 ± 20 | >=80% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4330 180nm | MWIR | 4330 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4360 180nm | MWIR | 4360 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4380 180nm | MWIR | 4380 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4420 60nm | MWIR | 4420 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4430 60nm | MWIR | 4430 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 60nm | MWIR | 4450 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 200nm | MWIR | 4450 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4480 60nm | MWIR | 4480 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 60nm | MWIR | 4500 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 140nm | MWIR | 4500 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 200nm | MWIR | 4500 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4520 140nm | MWIR | 4520 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4560 160nm | MWIR | 4560 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4600 160nm | MWIR | 4600 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4640 160nm | MWIR | 4640 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4650 160nm | MWIR | 4650 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4680 150nm | MWIR | 4680 ± 30 | 150 ± 20 | >=80% | 400-25000nm,T≤1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 4690 160nm | MWIR | 4690 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4750 180nm | MWIR | 4750 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4770 150nm | MWIR | 4770 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 5300 600nm | MWIR/LWIR transition | 5300 ± 40 | 600 ± 30 | >=80% | 400-11000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7300 300nm | MWIR/LWIR transition | 7300 ± 40 | 300 ± 30 | >=70% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7350 200nm | MWIR/LWIR transition | 7350 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7410 200nm | MWIR/LWIR transition | 7410 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7470 200nm | MWIR/LWIR transition | 7470 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7625 200nm | MWIR/LWIR transition | 7625 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7650 200nm | MWIR/LWIR transition | 7650 ± 30 | 200 ± 30 | >=60% | 400-12000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 8420 200nm | LWIR | 8420 ± 40 | 200 ± 30 | >=60% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 9020 180nm | LWIR | 9020 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T≤1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9080 180nm | LWIR | 9080 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T≤1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9900 370nm | LWIR | 9900 ± 30 | 370 ± 20 | >=70% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10000 370nm | LWIR | 10000 ± 40 | 370 ± 30 | >=75% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10050 370nm | LWIR | 10050 ± 40 | 370 ± 30 | >=60% | 400-16000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10270 600nm | LWIR | 10270 ± 40 | 600 ± 30 | >=75% | 400-13500nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10460 370nm | LWIR | 10460 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10500 600nm | LWIR | 10500 ± 50 | 600 ± 40 | >=75% | 400-13500nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10560 370nm | LWIR | 10560 ± 40 | 370 ± 30 | >=75% | 400-18000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10700 370nm | LWIR | 10700 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11500 600nm | LWIR | 11500 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11700 600nm | LWIR | 11700 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T≤1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 14500 1000nm | LWIR | 14500 ± 50 | 1000 ± 50 | >=70% | 400-19000nm,T≤1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
Wide bandpass filters cover broad MWIR and LWIR windows with out-of-band blocking for thermal imaging, gas analysis, and infrared sensing.
| Model | IR Region | Transmission Range | Average Transmittance | Blocking | Size | Substrate |
|---|---|---|---|---|---|---|
| STO-WBP 3100-3800nm Filter | MWIR | 3100-3800nm | >=85% | 400-25000nm, <=1% | Custom | Sapphire |
| STO-WBP 3250-3500nm Filter | MWIR | 3250-3500nm | >=88% | 400-6000nm, <=1% | Custom | Germanium |
| STO-WBP 3550-4150nm Filter | MWIR | 3550-4150nm | >=90% | 400-6000nm, <=1% | Custom | Germanium |
| STO-WBP 3670-4970nm Filter | MWIR | 3670-4970nm | >=90% | 400-6000nm, <=1% | Custom | Germanium |
| STO-WBP 4500-5000nm Filter | MWIR | 4500-5000nm | >=90% | 400-6000nm, <=1% | Custom | Germanium |
| STO-WBP 4750-5400nm Filter | MWIR/LWIR transition | 4750-5400nm | >=80% | 400-25000nm, <=1% | Custom | Sapphire |
| STO-WBP 8000-14000nm Filter | LWIR | 8000-14000nm | >75% | 0.4-7.5um, 15-21.5um, <=1% | Custom | Monocrystalline silicon |
| STO-WBP 8000-9450nm Filter | LWIR | 8000-9450nm | >=92% | 400-12000nm, <=1% | Custom | Germanium |
Infrared longpass filters transmit longer wavelength regions while blocking shorter wavelength energy for detector-side isolation and thermal imaging paths.
| Model | IR Region | Transmission Range | Average Transmittance | Blocking | Size | Substrate |
|---|---|---|---|---|---|---|
| STOLWP 3000-5000nm Filter | MWIR | 3000-5000nm | >85% | 400-2900nm, <=1% | Custom | Sapphire |
| STOLWP 5500-14000nm | LWIR | 5500-14000nm | >80% | 400-5000nm, <=1% | Custom | Monocrystalline silicon |
| STOLWP 7000-14000nm Filter | LWIR | 7000-14000nm | >80% | 400-6500nm, <=1% | Custom | Monocrystalline silicon |
| STOLWP 7700-9000nm Filter | LWIR | 7700-9000nm | >80% | 400-7600nm, <=1% | Custom | Monocrystalline silicon |
| STOLWP 8000-12000nm Filter | LWIR | 8000-12000nm | >85% | 400-7500nm, <=1% | Custom | Germanium |
Infrared anti-reflection coatings reduce surface reflection and improve system throughput for silicon, sapphire, and germanium optics.
| Coating | IR Region | Transmission Range | Average Transmittance | Size | Substrate |
|---|---|---|---|---|---|
| 0.8-5µm AR | MWIR | 0.8-5um | >=86% | Custom | Sapphire |
| 2.9-14.5µm AR | LWIR | 2.9-14.5um | >=73% | Custom | Germanium |
| 3-5µm AR | MWIR | 3-5um | >=90% | Custom | Monocrystalline silicon |
| 7-12µm AR | LWIR | 7-12um | >=88% | Custom | Monocrystalline silicon |
| 8-12µm AR+DLC | LWIR | 8-12um | >=75% | Custom | Monocrystalline silicon |
| 8-14µm AR | LWIR | 8-14um | >=83% | Custom | Monocrystalline silicon |
Metallized infrared windows use a coated optical aperture with metallized edges for soldering or hermetic packaging in detector and imaging assemblies.
| Specification | IR Region | Clear Aperture | Metallized Area | Spectral Specification | Substrate | Outer Size |
|---|---|---|---|---|---|---|
| 16 x 16 x 0.8mm | MWIR | 13.2 x 13.2 | ≥13.7 x 13.7 | 3-5um, Tavg≥96% | Germanium | 16 x 16 |
| Dia. 12 x 1mm | MWIR | Dia. 10 | ≥Dia. 10.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 12 |
| Dia. 18 x 1mm | MWIR | Dia. 14 | ≥Dia. 14.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 18 |
| Dia. 30 x 1mm | MWIR | Dia. 26 | ≥Dia. 26.5 | 3-5um, Tavg≥96% | Sapphire | Dia. 30 |
| 10 x 10 x 1mm | LWIR | 8.5 x 8.5 x 0.9 | ≥8.9 x 8.9 | 8-12um, Tavg≥82% | Monocrystalline silicon | 10 x 10 x 1 |
| Dia. 2.5 x 0.28mm | SWIR | Dia. 1.6 | ≥Dia. 1.8 | 1250-1650nm, Tavg>99% | Sapphire | Dia. 2.5 |
Additional IR bandpass models with FWHM up to 10 nm. The summary keeps optical selection fields visible and leaves physical dimensions for quotation review.
| Model | Spectral Range | Bandwidth Class | CWL (nm) | FWHM (nm) | Transmittance (T) | Blocking Summary | Substrate | Substrate Thickness (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP2475±5 | SWIR | ultra-narrow | 2475 ± 5 | 10 ± 5 | T≥60% | 600-3000 nm; T<1% | Borosilicate glass | 2 |
| STO-BP2490±5 | SWIR | ultra-narrow | 2490 ± 5 | 10 ± 5 | T≥60% | 600-3000 nm; T<1% | Borosilicate glass | 2 |
Additional IR bandpass models with FWHM above 10 nm and up to 20 nm, grouped for fast wavelength and bandwidth selection.
| Model | Spectral Range | Bandwidth Class | CWL (nm) | FWHM (nm) | Transmittance (T) | Blocking Summary | Substrate | Substrate Thickness (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP1440±20 | SWIR | narrow | 1440 ± 5 | 20 ± 10 | T≥70% | 400-2200 nm; T<1% | White glass | 3 |
| STO-BP1645±5 | SWIR | narrow | 1645 ± 5 | 20 ± 5 | T≥90% | 800-2000 nm; T<1% | Borosilicate glass | 0.5 |
| STO-BP1663±5 | SWIR | narrow | 1663 ± 5 | 20 ± 5 | T≥80% | 800-2000 nm; T<1% | Borosilicate glass | 0.5 |
| STO-BP1697 | SWIR | narrow | 1697 ± 2 | 15 ± 2 | T≥85% | 800-2000 nm; T<1% | Borosilicate glass | 0.5 |
| STO-BP1745±15 | SWIR | narrow | 1740 ± 5 | 20 ± 5 | T=55-65% | 400-2200 nm; T<1.5% | White glass | 3 |
Additional IR bandpass models with FWHM above 20 nm for broader spectral selection.
| Model | Spectral Range | Bandwidth Class | CWL (nm) | FWHM (nm) | Transmittance (T) | Blocking Summary | Substrate | Substrate Thickness (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP900±30 | NIR | standard | 900 ± 30 | 70 ± 30 | T≥90% | 650-1250 nm; T<1% | Sapphire | 3.5 |
| STO-BP1380±30 | SWIR | standard | 1380 ± 30 | 70 ± 30 | T≥85% | 500-2000 nm; T<1% | Sapphire | 3.5 |
| STO-BP1600±16 | SWIR | standard | 1600 ± 16 | 150 ± 20 | T≥80% | 400-3000 nm; T<1% | Corning 7980 | 2 |
| STO-BP1900±20 | SWIR | standard | 1900 ± 20 | 50 ± 15 | T≥80% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP1940±18 | SWIR | standard | 1940 ± 18 | 45 ± 10 | T≥80% | 400-3000 nm; T<1% | White glass | 1, 2 |
| STO-BP2010±20 | SWIR | standard | 2010 ± 20 | 180 ± 30 | T≥80% | 500-3000 nm; T<1% | Sapphire | 3.5 |
| STO-BP2017±10 | SWIR | standard | 2017 ± 10 | 35 ± 10 | T≥55% | 400-15000 nm; T<1% | Sapphire | 1 |
| STO-BP2050±20 | SWIR | standard | 2050 ± 20 | 200 ± 30 | T≥80% | 500-3000 nm; T<1% | Sapphire | 3.5 |
| STO-BP2120±20 | SWIR | standard | 2120 ± 20 | 50 ± 10 | T≥80% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP2220±20 | SWIR | standard | 2220 ± 20 | 45 ± 10 | T≥75% | 400-15000 nm; T<1% | Sapphire | 1 |
| STO-BP2240±20 | SWIR | standard | 2240 ± 20 | 30 ± 10 | T≥80% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP2250±10 | SWIR | standard | 2250 ± 10 | 30 ± 10 | T≥85% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP2300±20 | SWIR | standard | 2300 ± 20 | 90 ± 10 | T≥90% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP2310±20 | SWIR | standard | 2310 ± 20 | 90 ± 10 | T≥90% | 400-3000 nm; T<1% | White glass | 1 |
| STO-BP2400±24 | SWIR | standard | 2400 ± 24 | 70 ± 30 | T≥75% | 500-3000 nm; T<1% | Sapphire | 3.5 |
| STO-BP2435±10 | SWIR | standard | 2435 ± 10 | 60 ± 15 | T≥70% | 400-20000 nm; T<1% | Sapphire | 1 |
| STO-BP2435±20 | SWIR | standard | 2435 ± 20 | 60 ± 15 | T≥70% | 400-20000 nm; T<1% | Sapphire | 1 |
| STO-BP2460±20 | SWIR | standard | 2460 ± 20 | 50 ± 10 | T≥80% | 1500-15000 nm; T<1% | Sapphire | 1 |
| STO-BP2470±30 | SWIR | standard | 2470 ± 30 | 50 ± 20 | T≥75% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2500±25 | MWIR | standard | 2500 ± 25 | 70 ± 30 | T≥80% | 500-3000 nm; T<1% | Sapphire | 1, 3.5 |
| STO-BP2520±10 | MWIR | standard | 2520 ± 10 | 50 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2530±30 | MWIR | standard | 2530 ± 30 | 50 ± 20 | T≥75% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2550±50 | MWIR | standard | 2550 ± 50 | 70 ± 30 | T≥75% | 500-3000 nm; T<1% | Sapphire | 1, 3.5 |
| STO-BP2560±30 | MWIR | standard | 2560 ± 30 | 50 ± 20 | T≥75% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2570±30 | MWIR | standard | 2570 ± 30 | 50 ± 20 | T≥75% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2580±30 | MWIR | standard | 2580 ± 30 | 50 ± 20 | T≥75% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2600±10 | MWIR | standard | 2600 ± 10 | 50 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2600±30 | MWIR | standard | 2600 ± 30 | 50 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2610±30 | MWIR | standard | 2610 ± 30 | 50 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP2720 | MWIR | standard | 2720 ± 50 | 140 ± 20 | T≥80% | 100-30000 nm; T<1% | Fused silica | 1 |
| STO-BP2730±30 | MWIR | standard | 2730 ± 30 | 210 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 1 |
| STO-BP2750±50 | MWIR | standard | 2750 ± 50 | 140 ± 20 | T≥80% | 200-30000 nm; T<1% | Fused silica | 1 |
| STO-BP2850±28 | MWIR | standard | 2850 ± 28 | 86 ± 20 | T≥80% | 1500-5500 nm; T<1% | Silicon | 0.5, 6.35 |
| STO-BP2900±20 | MWIR | standard | 2900 ± 20 | 50 ± 10 | T≥70% | 1500-15000 nm; T<1% | Sapphire | 1 |
| STO-BP3030±40 | MWIR | standard | 3030 ± 40 | 145 ± 30 | T≥85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3050±50 | MWIR | standard | 3050 ± 50 | 100 ± 20 | T≥80% | 300-20000 nm; T<1% | Sapphire | 1 |
| STO-BP3085±30 | MWIR | standard | 3085 ± 30 | 100 ± 20 | T≥80% | 300-30000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-BP3130±40 | MWIR | standard | 3130 ± 40 | 145 ± 30 | T≥85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3150±20 | MWIR | standard | 3150 ± 20 | 60 ± 10 | T≥80% | 1500-5500 nm; T<1% | Fused silica | 0.5 |
| STO-BP3250±25 | MWIR | standard | 3250 ± 25 | 210 ± 10 | T≥80% | 400-3800 nm; T<1% | Silicon | 0.25 |
| STO-BP3250±50 | MWIR | standard | 3250 ± 50 | 180 ± 20 | T≥80% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-BP3275±20 | MWIR | standard | 3275 ± 10 | 30 ± 10 | T≥70% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP3280±30 | MWIR | standard | 3280 ± 30 | 210 ± 15 | T≥75% | 400-3800 nm; T<1% | Silicon | 0.25 |
| STO-BP3315±10 | MWIR | standard | 3315 ± 10 | 210 ± 10 | T≥80% | 400-3800 nm; T<1% | Silicon | 0.25 |
| STO-BP3320±50单 | MWIR | standard | 3320 ± 50 | 190 ± 20 | T≥60% | 800-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP3330±15 | MWIR | standard | 3330 ± 15 | 160 ± 20 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP3360±20 | MWIR | standard | 3360 ± 20 | 70 ± 10 | T≥80% | 1500-6500 nm; T<1% | Fused silica | 0.5 |
| STO-BP3370±35 | MWIR | standard | 3370 ± 35 | 660 ± 70 | T≥80% | 400-3800 nm; T<1% | Silicon | 0.25, 0.38 |
| STO-BP3370±50 | MWIR | standard | 3370 ± 50 | 400 ± 30 | T≥80% | 1000-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP3375±20 | MWIR | standard | 3375 ± 20 | 180 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5, 1 |
| STO-BP3375±40 | MWIR | standard | 3375 ± 40 | 660 ± 70 | T≥85% | 400-7000 nm; T<1% | Silicon | 0.25 |
| STO-BP3390±35 | MWIR | standard | 3390 ± 35 | 210 ± 10 | T≥80% | 400-7000 nm; T<1% | Silicon | 0.25 |
| STO-BP3416±20 | MWIR | standard | 3416 ± 20 | 120 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP3430±40 | MWIR | standard | 3430 ± 40 | 120 ± 20 | T≥75% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP3440±30 | MWIR | standard | 3440 ± 30 | 120 ± 10 | T≥80% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-BP3580±40 | MWIR | standard | 3580 ± 40 | 160 ± 20 | T≥80% | 400-20000 nm; T<1% | Sapphire | 0.5 |
| STO-BP3615±20 | MWIR | standard | 3615 ± 20 | 160 ± 20 | T≥80% | 400-20000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-BP3630±50 | MWIR | standard | 3630 ± 50 | 145 ± 20 | T≥80% | 400-15000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-BP3660±20 | MWIR | standard | 3660 ± 20 | 40 ± 10 | T≥80% | 800-6000 nm; T<1% | Silicon | 0.5, 0.916 |
| STO-BP3680±40 | MWIR | standard | 3680 ± 40 | 162 ± 24 | T≥85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3770±20 | MWIR | standard | 3770 ± 20 | 50 ± 10 | T≥80% | 400-13600 nm; T<1% | Sapphire | 0.5 |
| STO-BP3940±60 | MWIR | standard | 3940 ± 60 | 90 ± 20 | T≥80% | 1000-9000 nm; T<1% | Silicon | 0.5 |
| STO-BP3950±39 | MWIR | standard | 3950 ± 39 | 200 ± 20 | T≥85% | 400-8000 nm; T<1% | Silicon | 0.5 |
| STO-BP3990±50 | MWIR | standard | 3990 ± 50 | 180 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4020±40 | MWIR | standard | 4020 ± 40 | 180 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4050±50 | MWIR | standard | 4050 ± 50 | 100 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4060±50 | MWIR | standard | 4060 ± 50 | 100 ± 20 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5 |
| STO-BP4073±40 | MWIR | standard | 4073 ± 40 | 125 ± 50 | T≥85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4260±50 | MWIR | standard | 4260 ± 50 | 180 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4320±50 | MWIR | standard | 4320 ± 50 | 600 ± 40 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4380±50 | MWIR | standard | 4380 ± 50 | 150 ± 20 | T≥80% | 1000-9000 nm; T<1% | Silicon | 0.5 |
| STO-BP4490±70 | MWIR | standard | 4490 ± 70 | 180 ± 20 | T≥70% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4515±20 | MWIR | standard | 4515 ± 20 | 90 ± 20 | T≥75% | 200-30000 nm; T<1% | Sapphire | 1 |
| STO-BP4530±45 | MWIR | standard | 4530 ± 45 | 350 ± 20 | T≥80% | 400-20000 nm; T<1% | Sapphire | 0.3, 0.5 |
| STO-BP4560±40 | MWIR | standard | 4560 ± 40 | 310 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP4580±60 | MWIR | standard | 4580 ± 60 | 140 ± 20 | T≥70% | 400-10000 nm; T<1% | Silicon | 1 |
| STO-BP4680±50 | MWIR | standard | 4680 ± 50 | 180 ± 20 | T≥75% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP4680±55 | MWIR | standard | 4680 ± 55 | 180 ± 20 | T≥70% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP4680±60 | MWIR | standard | 4680 ± 60 | 180 ± 20 | T≥75% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP4710±20 | MWIR | standard | 4710 ± 20 | 140 ± 20 | T≥75% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP4710±40 | MWIR | standard | 4710 ± 40 | 180 ± 20 | T≥75% | 400-20000 nm; T<1% | Sapphire | 1 |
| STO-BP4760±50 | MWIR | standard | 4760 ± 50 | 285 ± 70 | T≥80% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4830±40 | MWIR | standard | 4830 ± 40 | 220 ± 20 | T≥75% | 400-11000 nm; T<1% | Germanium | 1 |
| STO-BP5000±50 | MWIR/LWIR transition | standard | 5000 ± 50 | 150 ± 20 | T≥85% | 1000-10000 nm; T<1% | Silicon | 1.5 |
| STO-BP5010±50 | MWIR/LWIR transition | standard | 5010 ± 50 | 220 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP5070±40 | MWIR/LWIR transition | standard | 5070 ± 50 | 100 ± 20 | T≥75% | 400-20000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-BP5120±50 | MWIR/LWIR transition | standard | 5120 ± 50 | 320 ± 20 | T≥70% | 400-5500 nm; T<1% | Silicon | 1 |
| STO-BP5200±50 | MWIR/LWIR transition | standard | 5200 ± 50 | 610 ± 40 | T≥80% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP5250±50 | MWIR/LWIR transition | standard | 5250 ± 50 | 90 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5, 1 |
| STO-BP5380±30 | MWIR/LWIR transition | standard | 5380 ± 30 | 100 ± 20 | T≥65% | 400-15000 nm; T<1% | Sapphire | 1 |
| STO-BP5450±30 | MWIR/LWIR transition | standard | 5450 ± 30 | 100 ± 20 | T≥65% | 400-15000 nm; T<1% | Sapphire | 1 |
| STO-BP5480±30 | MWIR/LWIR transition | standard | 5480 ± 30 | 100 ± 20 | T≥65% | 400-15000 nm; T<1% | Sapphire | 1 |
| STO-BP5600±60 | MWIR/LWIR transition | standard | 5600 ± 60 | 120 ± 20 | T≥80% | 1000-10000 nm | Silicon | 1.5 |
| STO-BP5850±50 | MWIR/LWIR transition | standard | 5850 ± 50 | 200 ± 20 | T≥70% | 400-11000 nm; T<1% | Silicon | 1 |
| STO-BP5850±60 | MWIR/LWIR transition | standard | 5850 ± 60 | 160 ± 20 | T≥75% | 1000-10000 nm; T<1% | Silicon | 1.5 |
| STO-BP5950±50 | MWIR/LWIR transition | standard | 5950 ± 50 | 200 ± 20 | T≥70% | 1000-10000 nm; T<1% | Silicon | 0.5 |
| STO-BP6050±50 | MWIR/LWIR transition | standard | 6050 ± 50 | 200 ± 20 | T≥75% | 1000-10000 nm; T<1% | Silicon | 1.5 |
| STO-BP6150±60 | MWIR/LWIR transition | standard | 6150 ± 60 | 200 ± 20 | T≥70% | 1000-10000 nm; T<1% | Silicon | 1.5 |
| STO-BP6220±30 | MWIR/LWIR transition | standard | 6220 ± 62 | 140 ± 20 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP6235±30 | MWIR/LWIR transition | standard | 6235 ± 30 | 110 ± 20 | T≥60% | 400-11000 nm; T<1% | Germanium | 0.9, 1 |
| STO-BP6240±40 | MWIR/LWIR transition | standard | 6240 ± 40 | 90 ± 20 | T≥70% | 400-11000 nm; T<1% | Germanium | 1 |
| STO-BP6250±30 | MWIR/LWIR transition | standard | 6250 ± 30 | 120 ± 20 | T≥70% | 400-15000 nm; T<1% | Silicon | 1 |
| STO-BP6820±68 | MWIR/LWIR transition | standard | 6820 ± 68 | 100 ± 20 | T≥75% | 400-10600 nm; T<1% | Silicon | 1 |
| STO-BP6910±20 | MWIR/LWIR transition | standard | 6910 ± 30 | 90 ± 20 | T≥65% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP7400±50 | MWIR/LWIR transition | standard | 7400 ± 50 | 360 ± 20 | T≥80% | 400-10600 nm; T<1% | Silicon | 0.5 |
| STO-BP7500±50 | MWIR/LWIR transition | standard | 7500 ± 50 | 2500 ± 100 | T≥90% | 400-17100 nm; T<1% | Germanium | 0.6 |
| STO-BP7530±30 | MWIR/LWIR transition | standard | 7530 ± 30 | 180 ± 30 | T≥80% | 400-10600 nm; T<1% | Silicon | 0.5, 1 |
| STO-BP7690±50 | MWIR/LWIR transition | standard | 7690 ± 50 | 340 ± 30 | T≥70% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-BP7700±50 | MWIR/LWIR transition | standard | 7700 ± 50 | 450 ± 30 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-BP7720±50 | MWIR/LWIR transition | standard | 7720 ± 50 | 180 ± 30 | T≥80% | 400-10600 nm; T<1% | Silicon | 0.5, 1 |
| STO-BP7760±50 | MWIR/LWIR transition | standard | 7760 ± 50 | 500 ± 30 | T≥80% | 200-13500 nm; T<1% | Silicon | 0.5 |
| STO-BP7780±20 | MWIR/LWIR transition | standard | 7780 ± 20 | 180 ± 30 | T≥80% | 400-10600 nm; T<1% | Silicon | 0.5, 1 |
| STO-BP7800±50 | MWIR/LWIR transition | standard | 7800 ± 50 | 450 ± 30 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-BP7890±80 | MWIR/LWIR transition | standard | 7890 ± 80 | 500 ± 30 | T≥80% | 200-13500 nm; T<1% | Silicon | 0.5 |
| STO-BP7950±50 | MWIR/LWIR transition | standard | 7950 ± 50 | 450 ± 30 | T≥75% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-BP7950±80 | MWIR/LWIR transition | standard | 7950 ± 80 | 250 ± 20 | T>75% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP8010±20 | LWIR | standard | 8010 ± 20 | 200 ± 20 | T>90% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP8060±60 | LWIR | standard | 8060 ± 60 | 250 ± 20 | T>80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP8120±30 | LWIR | standard | 8120 ± 30 | 250 ± 20 | T>90% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP8340±30 | LWIR | standard | 8340 ± 30 | 250 ± 20 | T>75% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-BP8350±100 | LWIR | standard | 8350 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP8400±100 | LWIR | standard | 8400 ± 100 | 50 ± 20 | T>70% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP8500±100 | LWIR | standard | 8500 ± 100 | 50 ± 10 | T>70% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP8550±100 | LWIR | standard | 8550 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP8700±100 | LWIR | standard | 8700 ± 100 | 210 ± 30 | T≥75% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP8800±100 | LWIR | standard | 8800 ± 100 | 210 ± 30 | T≥75% | 400-13600 nm; T<1% | Silicon | 0.5 |
| STO-BP10100±100 | LWIR | standard | 10100 ± 100 | 660 ± 40 | T≥85% | 400-14000 nm; T<1% | Germanium | 1 |
| STO-BP10220±100 | LWIR | standard | 10220 ± 100 | 660 ± 40 | T≥85% | 400-14000 nm; T<1% | Germanium | 1 |
| STO-BP10580±50 | LWIR | standard | 10580 ± 50 | 250 ± 20 | T≥70% | 400-18000 nm; T<1% | Silicon | 0.5 |
| STO-BP10860±150 | LWIR | standard | 10860 ± 150 | 640 ± 50 | T≥70% | 400-14000 nm; T<1% | Silicon | 0.5 |
| STO-BP11100±150 | LWIR | standard | 11100 ± 150 | 640 ± 50 | T≥70% | 400-14000 nm; T<1% | Silicon | 0.5 |
| STO-BP11200±150 | LWIR | standard | 11200 ± 150 | 640 ± 50 | T≥70% | 400-14000 nm; T<1% | Silicon | 0.5 |
| STO-BP11500±50 | LWIR | standard | 11500 ± 50 | 550 ± 50 | T≥65% | 400-18000 nm; T<1% | Silicon | 0.5 |
| STO-BP11580±60 | LWIR | standard | 11580 ± 60 | 550 ± 50 | T≥70% | 400-18000 nm; T<1% | Silicon | 0.5 |
| STO-BP12600±100 | LWIR | standard | 12600 ± 100 | 800 ± 40 | T≥85% | 400-15000 nm; T<1% | Germanium | 1 |
| STO-BP12750±100 | LWIR | standard | 12750 ± 100 | 800 ± 40 | T≥85% | 400-15000 nm; T<1% | Germanium | 1 |
| STO-BP13000±100 | LWIR | standard | 13000 ± 100 | 4000 ± 100 | T≥85% | 1200-20000 nm; T<1% | Germanium | 0.75, 0.9 |
| STO-BP13250±100 | LWIR | standard | 13250 ± 100 | 850 ± 50 | T≥85% | 400-15000 nm; T<1% | Germanium | 1 |
| STO-BP13650±100 | LWIR | standard | 13650 ± 100 | 850 ± 50 | T≥80% | 400-15000 nm; T<1% | Germanium | 0.5 |
| STO-BP15000±200 | LWIR | standard | 15000 ± 200 | 2200 ± 50 | T≥65% | 2000-25000 nm; T<1% | Germanium | 2.2 |
| STO-BP16000±200 | LWIR | standard | 16000 ± 200 | 2400 ± 50 | T≥70% | 2000-25000 nm; T<1% | Germanium | 1 |
| STO-BP16200±200 | LWIR | standard | 16200 ± 200 | 2400 ± 50 | T≥70% | 2000-25000 nm; T<1% | Germanium | 1 |
Additional wide-bandpass models for MWIR and LWIR sensing, imaging, and detector paths.
| Model | Spectral Range | Passband (nm) | Transmission Range (nm) | Transmittance (T) | Blocking Summary | Substrate | Substrate Thickness (mm) |
|---|---|---|---|---|---|---|---|
| STO-WBP1000~3000 | SWIR | 970 ± 100 – 2470 ± 100 | 1100-2300 | T≥90% | 200-3560 nm; T<1% | Glass ceramic | 1 |
| STO-WBP1520~1850 | SWIR | 1520 ± 50 – 1850 ± 50 | 1600-1750 | T≥80% | 400-3300 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP1550~1750 | SWIR | 1550 ± 50 – 1750 ± 50 | 1600-1700 | T≥80% | 1500-2800 nm; T<1% | Silicon | 1.2 |
| STO-WBP1550~5050 | MWIR | 1550 ± 50 – 5050 ± 50 | 1600-5000 | T≥80% | 1500-5580 nm; T<1% | Silicon | 1.2 |
| STO-WBP1650~2350 | SWIR | 1650 ± 50 – 2350 ± 50 | 1700-2250 | T≥80% | 400-4000 nm; T<10% | Silicon | 0.5 |
| STO-WBP2050~2350 | SWIR | 2050 ± 50 – 2350 ± 50 | 2150-2250 | T≥80% | 1500-2800 nm; T<1% | Silicon | 0.5, 1, 1.2 |
| STO-WBP2050~2500 | SWIR | 2050 ± 50 – 2500 ± 50 | 2150-2450 | T≥80% | 1500-5000 nm; T<1% | Silicon | 0.5 |
| STO-WBP2080~2350 | SWIR | 2080 ± 50 – 2350 ± 50 | 2135-2330 | T≥80% | 1500-2800 nm; T<1% | Silicon | 1.2 |
| STO-WBP2080~2430 | SWIR | 2080 ± 50 – 2430 ± 50 | 2180-2330 | T≥80% | 1500-2800 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP2170~3670 | MWIR | 2170 ± 50 – 3670 ± 50 | 2300-3600 | T≥85% | 1500-5000 nm; T<1% | Silicon | 0.5 |
| STO-WBP2300~3600 | MWIR | 2200 ± 50 – 3750 ± 50 | 2300-3600 | T≥85% | 1500-5000 nm; T<1% | Silicon | 0.5 |
| STO-WBP2300~3700 | MWIR | 2250 ± 30 – 3770 ± 30 | 2300-3700 | T≥90% | 1500-5000 nm; T<1% | Silicon | 1 |
| STO-WBP2400~3150 | MWIR | 2400 ± 50 – 3150 ± 50 | 2500-3000 | T≥90% | 400-10500 nm; T<1% | Sapphire | 1, 5 |
| STO-WBP2450~3200 | MWIR | 2450 ± 20 – 3200 ± 20 | 2500-3140 | T≥90% | 1500-7000 nm; T<1% | Germanium | 2.5 |
| STO-WBP2450~4600 | MWIR | 2450 ± 50 – 4600 ± 50 | 2550-4500 | T≥90% | 400-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP2450~5150 | MWIR | 2450 ± 50 – 5150 ± 50 | 2640-5040 | T≥90% | 400-7040 nm; T<1% | Silicon | 1 |
| STO-WBP2490~5240 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T≥90% | 400-7040 nm; T<1% | Silicon | 1 |
| STO-WBP2600~5000 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T≥90% | 400-7040 nm; T<1% | Germanium | 0.5, 0.9, 1 |
| STO-WBP2500-5000 | MWIR | 2500 ± 50 – 5000 ± 50 | 2700-4900 | T≥90% | 200-10000 nm; T<1% | Germanium | 0.9, 1.8 |
| STO-WBP2500~5100 | MWIR | 2500 ± 50 – 5100 ± 50 | 2650-4950 | T≥90% | 1500-10500 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP2550~3150 | MWIR | 2550 ± 50 – 3150 ± 50 | 2700-3100 | T≥85% | 1500-5000 nm; T<1% | Silicon | 0.5 |
| STO-WBP2550~3250 | MWIR | 2550 ± 50 – 3250 ± 50 | 2700-3100 | T≥90% | 430-10030 nm; T<1% | Silicon | 0.5, 2.5 |
| STO-WBP2600~3300 | MWIR | 2600 ± 50 – 3300 ± 50 | 2850-3000 | T≥85% | 400-10000 nm; T<1% | Germanium | 0.7 |
| STO-WBP2650~5050 | MWIR | 2600 ± 100 – 5050 ± 50 | 2750-4950 | T≥90% | 1500-8000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP2650~3000 | MWIR | 2650 ± 40 – 3000 ± 40 | 2700-2950 | T≥85% | 1000-6000 nm; T<1% | Germanium | 1.8 |
| STO-WBP2700-3550 | MWIR | 2700 ± 50 – 3550 ± 50 | 2800-3450 | T≥90% | 300-20000 nm; T<1% | Sapphire | 1 |
| STO-WBP2700-3600 | MWIR | 2700 ± 50 – 3600 ± 50 | 2800-3500 | T≥90% | 300-20000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-WBP2700~3150 | MWIR | 2700 ± 50 – 3150 ± 50 | 2800-3050 | T≥80% | 1500-5000 nm; T<1% | Germanium | 1 |
| STO-WBP2720~2980 | MWIR | 2720 ± 20 – 2980 ± 20 | 2780-2920 | T≥80% | 1500-5000 nm; T<1% | Germanium | 1 |
| STO-WBP2730~3010 | MWIR | 2730 ± 20 – 3010 ± 20 | 2800-2900 | T≥85% | 1500-5000 nm; T<1% | Germanium | 1 |
| STO-WBP2750~4850 | MWIR | 2750 ± 50 – 4850 ± 50 | 3000-4600 | T≥85% | 1000-5100 nm; T<1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP2750~5100 | MWIR | 2750 ± 50 – 5100 ± 50 | 2900-5000 | T≥90% | 1500-10500 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP2790~3070 | MWIR | 2790 ± 20 – 3070 ± 20 | 2900-3000 | T≥80% | 1500-5000 nm; T<1% | Germanium | 0.9, 1 |
| STO-WBP2800~3050 | MWIR | 2800 ± 50 – 3050 ± 50 | 2900-3000 | T≥90% | 1500-6500 nm; T<1% | Silicon | 0.5 |
| STO-WBP2800~5150 | MWIR | 2800 ± 50 – 5150 ± 50 | 2950-5000 | T≥90% | 1500-10500 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP2800~5200单 | MWIR | 2800 ± 100 – 5200 ± 100 | 2900-5100 | T≥55% | 2580-8000 nm; T<1% | Silicon | 0.5 |
| STO-WBP2800~5250 | MWIR | 2800 ± 50 – 5250 ± 50 | 2950-5100 | T≥90% | 1500-10500 nm; T<1% | Germanium | 0.3 |
| STO-WBP2900~4140 | MWIR | 2900 ± 50 – 4140 ± 50 | 3100-4040 | T≥90% | 700-8040 nm; T<1% | Germanium | 0.3 |
| STO-WBP2900~4450 | MWIR | 2900 ± 50 – 4450 ± 50 | 3050-4350 | T≥85% | 1500-10000 nm; T<1% | Germanium | 0.9 |
| STO-WBP2900~4550 | MWIR | 2900 ± 50 – 4550 ± 50 | 3050-4450 | T≥85% | 1500-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP2900~4850 | MWIR | 2900 ± 50 – 4850 ± 50 | 3050-4750 | T≥90% | 400-11000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP2900~5100 | MWIR | 2900 ± 50 – 5100 ± 50 | 3000-5000 | T≥90% | 1000-10500 nm; T<1% | Germanium | 0.3, 0.4, 0.7 |
| STO-WBP2950~3250 | MWIR | 2950 ± 50 – 3250 ± 50 | 3000-3200 | T≥85% | 200-20000 nm; T<1% | Sapphire | 1 |
| STO-WBP2950~3600 | MWIR | 2950 ± 50 – 3600 ± 50 | 3150-3400 | T≥85% | 1000-10500 nm; T<1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~3650 | MWIR | 2950 ± 50 – 3650 ± 50 | 3150-3450 | T≥85% | 1000-10500 nm; T<1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~4950 | MWIR | 2950 ± 50 – 4950 ± 50 | 3100-4800 | T≥90% | 400-11000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP3000~3300 | MWIR | 3000 ± 20 – 3300 ± 20 | 3050-3250 | T≥85% | 200-20000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-WBP3000~3700 | MWIR | 3000 ± 50 – 3700 ± 50 | 3100-3600 | T≥90% | 200-10000 nm; T<1% | Germanium | 1.8 |
| STO-WBP3000~3800 | MWIR | 3000 ± 100 – 3800 ± 100 | 3100-3700 | T≥80% | 400-14000 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3000~3875 | MWIR | 3000 ± 100 – 3875 ± 75 | 3250-3650 | T≥80% | 500-5500 nm; T<1% | Sapphire | 0.3, 0.5 |
| STO-WBP3000~4260 | MWIR | 3000 ± 50 – 4260 ± 50 | 3250-3900 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3000~4300 | MWIR | 3000 ± 50 – 4300 ± 50 | 3250-3900 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3000~5300 | MWIR | 3000 ± 50 – 5300 ± 50 | 3150-5150 | T≥85% | 1500-15500 nm; T<1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3000~5400 | MWIR | 3000 ± 50 – 5400 ± 50 | 3100-5300 | T≥90% | 1500-2800 nm; T<1% | Germanium | 0.7, 1 |
| STO-WBP3020~3320 | MWIR | 3020 ± 20 – 3320 ± 20 | 3050-3250 | T≥85% | 200-20000 nm; T<1% | Sapphire | 1 |
| STO-WBP3040~4320 | MWIR | 3040 ± 50 – 4320 ± 50 | 3250-4050 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3050~4200 | MWIR | 3050 ± 50 – 4200 ± 50 | 3250-3900 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3050~5000 | MWIR | 3050 ± 50 – 5000 ± 50 | 3200-4850 | T≥85% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3050~5450 | MWIR | 3050 ± 50 – 5450 ± 50 | 3200-5300 | T≥85% | 1500-15500 nm; T<1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3100~3700 | MWIR | 3100 ± 150 – 3700 ± 150 | 3200-3600 | T≥90% | 400-20000 nm; T<1% | Sapphire | 1 |
| STO-WBP3100~4100 | MWIR | 3100 ± 50 – 4100 ± 50 | 3300-3900 | T≥90% | 900-8000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3100~4150 | MWIR | 3100 ± 50 – 4150 ± 50 | 3250-4050 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.4 |
| STO-WBP3100~4200 | MWIR | 3100 ± 50 – 4200 ± 50 | 3250-4050 | T≥85% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3100~4250 | MWIR | 3100 ± 50 – 4250 ± 50 | 3250-3900 | T≥80% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3130~3400 | MWIR | 3130 ± 50 – 3400 ± 50 | 3250-3350 | T≥75% | 500-3700 nm; T<1% | Germanium | 0.9 |
| STO-WBP3150~3560 | MWIR | 3150 ± 50 – 3560 ± 50 | 3300-3500 | T≥85% | 400-10000 nm; T<1% | Sapphire | 0.3 |
| STO-WBP3150~3600 | MWIR | 3150 ± 50 – 3600 ± 50 | 3250-3520 | T≥90% | 1500-6000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3150~3650 | MWIR | 3150 ± 50 – 3650 ± 50 | 3250-3500 | T≥90% | 1500-6000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3150~4100 | MWIR | 3150 ± 50 – 4100 ± 50 | 3250-4000 | T≥80% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3150~4200 | MWIR | 3150 ± 50 – 4200 ± 50 | 3300-4100 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.3 |
| STO-WBP3150~5150 | MWIR | 3150 ± 50 – 5150 ± 50 | 3300-5000 | T≥85% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3180-3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3380 | T≥85% | 450-5600 nm; T<1% | Zinc selenide | 1.5, 2 |
| STO-WBP3180~3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3400 | T≥80% | 400-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3200~3500 | MWIR | 3200 ± 50 – 3500 ± 50 | 3250-3450 | T≥85% | 500-3700 nm; T<1% | Germanium | 0.3 |
| STO-WBP3200~3550 | MWIR | 3200 ± 50 – 3550 ± 50 | 3280-3480 | T≥90% | 500-7000 nm; T<1% | Germanium | 0.7, 0.9 |
| STO-WBP3200~4000 | MWIR | 3200 ± 50 – 4000 ± 50 | 3350-3850 | T≥90% | 500-10000 nm; T<1% | Silicon | 4 |
| STO-WBP3200~4100 | MWIR | 3200 ± 50 – 4100 ± 50 | 3300-4000 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3200~5200 | MWIR | 3200 ± 100 – 5200 ± 100 | 3300-5050 | T≥80% | 1500-7000 nm; T<1% | Silicon | 0.3 |
| STO-WBP3170~3430 | MWIR | 3220 ± 20 – 3480 ± 20 | 3300-3430 | T≥85% | 450-6050 nm; T<1% | Germanium | 0.3, 0.9, 1 |
| STO-WBP3230~3500 | MWIR | 3230 ± 50 – 3500 ± 50 | 3250-3480 | T≥80% | 400-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3230~3520 | MWIR | 3230 ± 30 – 3520 ± 30 | 3300-3430 | T≥85% | 450-6050 nm; T<1% | Germanium | 0.3 |
| STO-WBP3250~4200 | MWIR | 3250 ± 50 – 4200 ± 50 | 3400-4100 | T≥85% | 1500-10600 nm; T<1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP3270~3470 | MWIR | 3270 ± 50 – 3470 ± 50 | 3320-3420 | T≥80% | 200-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3300~4250 | MWIR | 3300 ± 50 – 4250 ± 50 | 3450-4150 | T≥85% | 1500-10600 nm; T<1% | Germanium | 0.4 |
| STO-WBP3300~4900 | MWIR | 3300 ± 50 – 4900 ± 50 | 3400-4800 | T≥90% | 500-8000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3400~3600 | MWIR | 3325 ± 25 – 3675 ± 25 | 3450-3550 | T≥90% | 900-6000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3350~4250 | MWIR | 3350 ± 50 – 4250 ± 50 | 3550-4150 | T≥90% | 430-10030 nm; T<1% | Silicon | 2.5 |
| STO-WBP3350~4500 | MWIR | 3350 ± 50 – 4500 ± 50 | 3500-4350 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.7 |
| STO-WBP3350~4750 | MWIR | 3350 ± 50 – 4750 ± 50 | 3450-4650 | T≥90% | 1500-8000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3400~4000 | MWIR | 3400 ± 50 – 4000 ± 50 | 3500-3850 | T≥90% | 200-10000 nm; T<1% | Germanium | 1.8 |
| STO-WBP3400~4100 | MWIR | 3400 ± 100 – 4100 ± 100 | 3550-4000 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.4 |
| STO-WBP3400~4200 | MWIR | 3400 ± 100 – 4200 ± 100 | 3550-4100 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.5, 1 |
| STO-WBP3400~4300 | MWIR | 3400 ± 50 – 4300 ± 50 | 3500-4200 | T≥80% | 1500-7000 nm; T<1% | Sapphire | 2.5 |
| STO-WBP3400~4800 | MWIR | 3400 ± 50 – 4800 ± 50 | 3500-4700 | T≥90% | 1500-8000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3400~4850 | MWIR | 3400 ± 50 – 4850 ± 50 | 3400-4500 | T≥90% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3400~4950 | MWIR | 3400 ± 50 – 4950 ± 50 | 3700-4700 | T≥90% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3400~5000 | MWIR | 3400 ± 50 – 5000 ± 50 | 3500-4900 | T≥90% | 1500-10600 nm; T<1% | Silicon | 0.5 |
| STO-WBP3400~5100 | MWIR | 3400 ± 50 – 5100 ± 50 | 3600-5000 | T≥90% | 1500-10600 nm; T<1% | Silicon | 0.5 |
| STO-WBP3420~3910 | MWIR | 3420 ± 50 – 3910 ± 50 | 3500-3830 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP3425~4850 | MWIR | 3425 ± 75 – 4850 ± 50 | 3650-4750 | T≥85% | 1500-7000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3440~4890 | MWIR | 3440 ± 50 – 4890 ± 50 | 3500-4830 | T≥90% | 540-10040 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3450~4000 | MWIR | 3450 ± 50 – 4000 ± 50 | 3500-3900 | T≥85% | 1500-6000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3450~4050 | MWIR | 3450 ± 50 – 4050 ± 50 | 3600-3900 | T≥90% | 200-10000 nm; T<1% | Germanium | 1.8 |
| STO-WBP3470~4950 | MWIR | 3470 ± 50 – 4950 ± 50 | 3570-4850 | T≥90% | 500-10070 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3480~4880 | MWIR | 3480 ± 50 – 4880 ± 50 | 3700-4800 | T≥80% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3490~3850 | MWIR | 3490 ± 50 – 3850 ± 50 | 3550-3750 | T≥80% | 400-6000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP3490~3950 | MWIR | 3490 ± 50 – 3950 ± 50 | 3650-3800 | T≥80% | 400-10000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP3490~4050 | MWIR | 3490 ± 50 – 4050 ± 50 | 3650-3950 | T≥80% | 400-10000 nm; T<1% | Silicon | 1 |
| STO-WBP3500~4150 | MWIR | 3500 ± 50 – 4150 ± 50 | 3600-4050 | T≥90% | 1500-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3500~4900 | MWIR | 3500 ± 50 – 4900 ± 50 | 3600-4800 | T≥70% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3500~4950 | MWIR | 3500 ± 50 – 4950 ± 50 | 3560-4900 | T≥90% | 540-10040 nm; T<1% | Germanium | 0.3 |
| STO-WBP3500~5300 | MWIR | 3500 ± 50 – 5300 ± 50 | 3600-5100 | T≥85% | 1500-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3500~5600 | MWIR | 3500 ± 50 – 5600 ± 50 | 3600-5500 | T≥85% | 1500-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3525~4925 | MWIR | 3525 ± 100 – 4950 ± 100 | 3700-4800 | T≥90% | 1500-9000 nm; T<1% | Germanium | 0.5 |
| STO-WBP3530~3950 | MWIR | 3530 ± 50 – 3950 ± 50 | 3610-3870 | T≥75% | 400-5580 nm; T<1% | Silicon | 0.5, 1.2 |
| STO-WBP3500~3970 | MWIR | 3545 ± 20 – 4015 ± 20 | 3610-3955 | T≥80% | 450-5600 nm; T<1% | Zinc selenide | 2 |
| STO-WBP3550~4100 | MWIR | 3550 ± 50 – 4100 ± 50 | 3650-4000 | T≥93% | 1500-6000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3550~4250 | MWIR | 3550 ± 50 – 4250 ± 50 | 3600-4200 | T≥90% | 500-6500 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3550~4750 | MWIR | 3550 ± 50 – 4750 ± 50 | 3650-4650 | T≥90% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3550~4950 | MWIR | 3550 ± 50 – 4950 ± 50 | 3700-4800 | T≥90% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3550~4990 | MWIR | 3550 ± 50 – 4990 ± 50 | 3600-4800 | T≥85% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3550~5000 | MWIR | 3550 ± 50 – 5000 ± -100 | 3700-4600 | T≥90% | 1500-10500 nm; T<1% | Sapphire | 0.3, 0.5 |
| STO-WBP3600-4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3620-3890 | T≥75% | 450-5600 nm; T<1% | Zinc selenide | 1.5, 2 |
| STO-WBP3600~4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3680-3900 | T≥75% | 400-5580 nm; T<1% | Silicon | 1.2 |
| STO-WBP3600~4300 | MWIR | 3600 ± 50 – 4300 ± 50 | 3700-4200 | T≥85% | 1500-6000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3600~4850 | MWIR | 3600 ± 50 – 4850 ± 50 | 3700-4700 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3, 1 |
| STO-WBP3600~5000 | MWIR | 3600 ± 50 – 5000 ± 50 | 3700-4700 | T≥90% | 400-9000 nm; T<1% | Germanium | 0.8 |
| STO-WBP3600~5100 | MWIR | 3600 ± 100 – 5100 ± 100 | 3800-5000 | T≥90% | 200-10500 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3600~5300 | MWIR | 3600 ± 50 – 5300 ± 50 | 3700-5200 | T≥90% | 930-10050 nm; T<1% | Germanium | 0.5 |
| STO-WBP3600~5450 | MWIR | 3600 ± 50 – 5450 ± 50 | 3800-5250 | T≥80% | 400-6000 nm; T<1% | Germanium | 0.9 |
| STO-WBP3600~5550 | MWIR | 3600 ± 50 – 5550 ± 50 | 3700-5400 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3605~5275 | MWIR | 3605 ± 25 – 5275 ± 25 | 3730-5150 | T≥90% | 930-10050 nm; T<1% | Germanium | 0.5 |
| STO-WBP3650~4265 | MWIR | 3650 ± 50 – 4265 ± 50 | 3750-4150 | T≥90% | 500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3650~5050 | MWIR | 3650 ± 50 – 5050 ± 50 | 3800-4900 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3650~5100 | MWIR | 3650 ± 50 – 5100 ± 50 | 3740-5000 | T≥93% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3650~5150 | MWIR | 3650 ± 70 – 5150 ± 70 | 3800-5000 | T≥90% | 200-10500 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3650~5350 | MWIR | 3650 ± 50 – 5350 ± 50 | 3800-5200 | T≥90% | 400-11000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3650~5550 | MWIR | 3650 ± 50 – 5550 ± 50 | 3750-5300 | T≥85% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3650~5600 | MWIR | 3650 ± 50 – 5600 ± 50 | 3750-5400 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3650~5750 | MWIR | 3650 ± 50 – 5750 ± 50 | 3750-5450 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~4500 | MWIR | 3650 ± 50 – 4600 ± 50 | 3700-4500 | T≥90% | 1500-7000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP3660~4250 | MWIR | 3660 ± 50 – 4250 ± 50 | 3750-4150 | T≥90% | 500-7000 nm; T<1% | Germanium | 0.9, 1 |
| STO-WBP3800~4850 | MWIR | 3675 ± 25 – 4975 ± 25 | 3800-4850 | T≥90% | 500-6500 nm; T<1% | Germanium | 0.3 |
| STO-WBP3680~5160 | MWIR | 3700 ± 100 – 5200 ± 100 | 3800-4700 | T≥90% | 400-14000 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3700~4550 | MWIR | 3700 ± 50 – 4550 ± 50 | 3800-4450 | T≥90% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3700~4700 | MWIR | 3700 ± 50 – 4700 ± 50 | 3800-4600 | T≥85% | 500-8000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~4990 | MWIR | 3700 ± 50 – 4990 ± 40 | 3800-4750 | T≥85% | 1000-6500 nm; T<1% | Germanium | 0.3, 0.38, 0.7 |
| STO-WBP3700~5020 | MWIR | 3700 ± 50 – 5020 ± 50 | 3800-4920 | T≥90% | 500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~5150 | MWIR | 3700 ± 50 – 5150 ± 50 | 3750-4900 | T≥92% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~5200 | MWIR | 3700 ± 60 – 5200 ± 60 | 3850-5050 | T≥90% | 200-10500 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3700~5600 | MWIR | 3700 ± 50 – 5600 ± 50 | 3850-5450 | T≥85% | 1500-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~5750 | MWIR | 3700 ± 50 – 5750 ± 50 | 3850-5500 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3700~5800 | MWIR | 3700 ± 50 – 5800 ± 50 | 3850-5600 | T≥90% | 1500-7000 nm; T<1% | Germanium | 1 |
| STO-WBP3710~5030 | MWIR | 3710 ± 30 – 5030 ± 30 | 3800-4900 | T≥90% | 1800-7000 nm; T<1% | Silicon | 1 |
| STO-WBP3730~4850 | MWIR | 3730 ± 50 – 4850 ± 50 | 3900-4700 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3730~4900 | MWIR | 3730 ± 50 – 4900 ± 50 | 3850-4750 | T≥90% | 1000-6500 nm; T<1% | Germanium | 0.3, 0.4 |
| STO-WBP3730~4960 | MWIR | 3730 ± 50 – 4960 ± 50 | 3850-4600 | T≥85% | 1000-6500 nm; T<1% | Germanium | 0.9 |
| STO-WBP3740~4840 | MWIR | 3740 ± 50 – 4840 ± 50 | 3740-4840 | T≥90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3740~4860 | MWIR | 3740 ± 40 – 4860 ± 40 | 3850-4700 | T≥85% | 1000-10000 nm; T<1% | Germanium | 0.3, 0.38, 0.4 |
| STO-WBP3740~4950 | MWIR | 3740 ± 50 – 4950 ± 50 | 3900-4800 | T≥90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3750~4500 | MWIR | 3750 ± 50 – 4500 ± 50 | 3850-4400 | T≥85% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3750~4850 | MWIR | 3750 ± 50 – 4850 ± 50 | 3900-4700 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3750~4900 | MWIR | 3750 ± 50 – 4900 ± 50 | 3900-4700 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP3750~5020 | MWIR | 3750 ± 50 – 5020 ± 50 | 3850-4920 | T≥90% | 500-7000 nm; T<1% | Germanium | 0.3, 1 |
| STO-WBP3750~5050 | MWIR | 3750 ± 50 – 5050 ± 50 | 3900-4900 | T≥85% | 1000-6500 nm; T<1% | Germanium | 0.8 |
| STO-WBP3750~5650 | MWIR | 3750 ± 50 – 5650 ± 50 | 4000-5300 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.7 |
| STO-WBP3750~5700 | MWIR | 3750 ± 50 – 5700 ± 50 | 4000-5500 | T≥85% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3750~5800 | MWIR | 3750 ± 50 – 5800 ± 50 | 3800-5600 | T≥80% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP3800~4100 | MWIR | 3800 ± 50 – 4100 ± 50 | 3850-4050 | T≥90% | 500-8000 nm; T<1% | Germanium | 0.6 |
| STO-WBP3800~4700 | MWIR | 3800 ± 50 – 4700 ± 50 | 3800-4900 | T≥90% | 1500-7000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP3800~5500 | MWIR | 3800 ± 100 – 5500 ± 100 | 3900-5400 | T≥80% | 400-14000 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3900~5150 | MWIR | 3900 ± 100 – 5150 ± 50 | 4400-4800 | T≥85% | 500-6500 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3900~5600 | MWIR | 3900 ± 100 – 5600 ± 100 | 4000-5500 | T≥80% | 400-14000 nm; T<1% | Sapphire | 0.5 |
| STO-WBP3900~5650 | MWIR | 3900 ± 100 – 5650 ± 100 | 4100-5400 | T≥80% | 400-14000 nm; T<1% | Sapphire | 0.5 |
| STO-WBP4000~4650 | MWIR | 4000 ± 50 – 4650 ± 50 | 4120-4480 | T≥85% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4000~5000 | MWIR | 4000 ± 200 – 5000 ± 200 | 4200-4900 | T≥85% | 400-20000 nm; T<1% | Sapphire | 0.5, 1 |
| STO-WBP4000~5200 | MWIR | 4000 ± 50 – 5200 ± 50 | 4100-5000 | T≥90% | 200-10000 nm; T<1% | Germanium | 0.9, 1.8 |
| STO-WBP4100~4650 | MWIR | 4100 ± 50 – 4650 ± 50 | 4200-4550 | T≥80% | 1500-7000 nm; T<1% | Germanium | 0.9 |
| STO-WBP4120~4360 | MWIR | 4120 ± 60 – 4360 ± 60 | 4220-4320 | T≥85% | 300-6500 nm; T<1% | Silicon | 1 |
| STO-WBP4140~4370 | MWIR | 4140 ± 30 – 4370 ± 30 | 4200-4300 | T≥75% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4140~4440 | MWIR | 4140 ± 30 – 4440 ± 30 | 4200-4400 | T≥80% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4150~4650 | MWIR | 4150 ± 50 – 4650 ± 50 | 4250-4550 | T≥90% | 1500-6000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP4200~4450 | MWIR | 4200 ± 20 – 4450 ± 20 | 4250-4400 | T≥85% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4200~4750 | MWIR | 4200 ± 50 – 4750 ± 50 | 4250-4650 | T≥80% | 1500-7000 nm; T<1% | Germanium | 0.3 |
| STO-WBP4200~5000 | MWIR | 4200 ± 50 – 5000 ± 50 | 4350-4800 | T≥85% | 500-10000 nm; T<1% | Silicon | 4 |
| STO-WBP4212~4457 | MWIR | 4212 ± 40 – 4457 ± 40 | 4260-4400 | T≥80% | 300-6500 nm; T<1% | Silicon | 0.95 |
| STO-WBP4230~4520 | MWIR | 4230 ± 20 – 4520 ± 20 | 4350-4450 | T≥80% | 1500-5000 nm; T<1% | Germanium | 1 |
| STO-WBP4250~4800 | MWIR | 4250 ± 50 – 4800 ± 50 | 4350-4700 | T≥80% | 1500-7000 nm; T<1% | Germanium | 0.3, 0.9 |
| STO-WBP4250~5300 | MWIR | 4250 ± 50 – 5300 ± 50 | 4400-5000 | T≥85% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4290~4580 | MWIR | 4290 ± 20 – 4580 ± 20 | 4400-4500 | T≥80% | 1500-5000 nm; T<1% | Germanium | 0.9, 1 |
| STO-WBP4300~4500 | MWIR | 4300 ± 30 – 4500 ± 30 | 4350-4450 | T≥90% | 1500-7000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4400~4700 | MWIR | 4400 ± 50 – 4700 ± 50 | 4570-4600 | T≥80% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4420~4720 | MWIR | 4420 ± 50 – 4720 ± 50 | 4470-4670 | T≥80% | 520-8020 nm; T<1% | Germanium | 0.3 |
| STO-WBP4450~4750 | MWIR | 4450 ± 70 – 4750 ± 70 | 4570-4620 | T≥70% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4450~4950 | MWIR | 4450 ± 50 – 4950 ± 50 | 4550-4900 | T≥90% | 1500-6000 nm; T<1% | Germanium | 0.3 |
| STO-WBP4450~5150 | MWIR | 4450 ± 50 – 5150 ± 50 | 4550-5050 | T≥85% | 1000-9400 nm; T<1% | Germanium | 0.8, 1 |
| STO-WBP4500~4800 | MWIR | 4500 ± 50 – 4800 ± 50 | 4640-4740 | T≥85% | 400-10000 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP4500~4900 | MWIR | 4500 ± 50 – 4900 ± 50 | 4600-4800 | T≥85% | 1500-11000 nm; T<1% | Silicon | 0.8 |
| STO-WBP4520~4720 | MWIR | 4520 ± 50 – 4720 ± 50 | 4570-4670 | T≥80% | 520-8020 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP4520~4820 | MWIR | 4520 ± 50 – 4820 ± 50 | 4570-4770 | T≥80% | 520-8020 nm; T<1% | Germanium | 0.3 |
| STO-WBP4550~5200 | MWIR | 4550 ± 50 – 5300 ± 50 | 4600-5150 | T≥85% | 1000-9400 nm; T<1% | Germanium | 0.8, 1 |
| STO-WBP4600~4900 | MWIR | 4600 ± 50 – 4900 ± 50 | 4700-4800 | T≥80% | 400-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP4650~4950 | MWIR | 4650 ± 50 – 4950 ± 50 | 4700-4800 | T≥80% | 400-10000 nm; T<1% | Germanium | 0.3 |
| STO-WBP4650~4980 | MWIR | 4650 ± 50 – 4980 ± 50 | 4700-4800 | T≥80% | 400-10000 nm; T<1% | Germanium | 1 |
| STO-WBP4650~5300 | MWIR | 4650 ± 50 – 5300 ± 50 | 4800-5200 | T≥80% | 1500-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4750~5150 | MWIR | 4750 ± 50 – 5150 ± 50 | 4800-5000 | T≥80% | 1000-8000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4800~5000 | MWIR | 4800 ± 50 – 5000 ± 50 | 4850-4950 | T≥80% | 400-5500 nm; T<1% | Silicon | 1.2 |
| STO-WBP4800~5100 | MWIR | 4800 ± 50 – 5100 ± 50 | 4850-5050 | T≥80% | 400-5500 nm; T<1% | Silicon | 1 |
| STO-WBP4800~5200 | MWIR/LWIR transition | 4800 ± 50 – 5200 ± 50 | 4860-5140 | T≥90% | 1000-8000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4900~5100 | MWIR/LWIR transition | 4900 ± 50 – 5100 ± 50 | 4950-5050 | T≥80% | 400-5500 nm; T<1% | Silicon | 1 |
| STO-WBP4920~5800 | MWIR/LWIR transition | 4920 ± 50 – 5800 ± 50 | 5100-5600 | T≥85% | 400-10000 nm; T<1% | Silicon | 0.5 |
| STO-WBP4950~9250 | MWIR/LWIR transition | 4950 ± 50 – 9250 ± 50 | 5100-9100 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3 |
| STO-WBP5000~5800 | MWIR/LWIR transition | 5000 ± 50 – 5800 ± 50 | 5100-5600 | T≥80% | 400-10000 nm; T<1% | Germanium | 1 |
| STO-WBP5010~5880 | MWIR/LWIR transition | 5010 ± 50 – 5880 ± 50 | 5110-5780 | T≥80% | 400-10000 nm; T<1% | Germanium | 1 |
| STO-WBP5030~9280 | MWIR/LWIR transition | 5030 ± 50 – 9280 ± 50 | 5180-9130 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP5050~9160 | MWIR/LWIR transition | 5050 ± 50 – 9160 ± 50 | 5300-8750 | T≥85% | 620-10120 nm; T<1% | Germanium | 2 |
| STO-WBP5090~9450 | MWIR/LWIR transition | 5090 ± 90 – 9450 ± 90 | 5240-9300 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP5100~5850 | MWIR/LWIR transition | 5100 ± 50 – 5850 ± 50 | 5300-5700 | T≥75% | 400-10000 nm; T<1% | Germanium | 0.9, 1 |
| STO-WBP5100~9350 | MWIR/LWIR transition | 5100 ± 50 – 9350 ± 50 | 6100-9200 | T≥85% | 620-10120 nm; T<1% | Germanium | 2 |
| STO-WBP5150~6000 | MWIR/LWIR transition | 5150 ± 50 – 6000 ± 50 | 5050-5900 | T≥80% | 500-10120 nm; T<1% | Germanium | 2 |
| STO-WBP5150~9450 | MWIR/LWIR transition | 5150 ± 50 – 9450 ± 50 | 5400-9100 | T≥85% | 620-10120 nm; T<1% | Germanium | 2 |
| STO-WBP5240~9440 | MWIR/LWIR transition | 5240 ± 70 – 9440 ± 70 | 6000-9000 | T≥80% | 580-10080 nm; T<1% | Germanium | 2 |
| STO-WBP5400~7400 | MWIR/LWIR transition | 5400 ± 50 – 7400 ± 50 | 5500-7300 | T≥90% | 1500-10000 nm; T<1% | Germanium | 1.5 |
| STO-WBP5450~7600 | MWIR/LWIR transition | 5450 ± 50 – 7600 ± 50 | 5600-7400 | T≥90% | 1500-10000 nm; T<1% | Germanium | 1.5 |
| STO-WBP5510~6700 | MWIR/LWIR transition | 5510 ± 60 – 6700 ± 60 | 5700-6500 | T≥75% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP5550~7550 | MWIR/LWIR transition | 5550 ± 50 – 7550 ± 50 | 5750-7250 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.5 |
| STO-WBP5550~7600 | MWIR/LWIR transition | 5550 ± 50 – 7600 ± 50 | 5750-7300 | T≥90% | 1500-10600 nm; T<1% | Germanium | 0.5 |
| STO-WBP5550~7650 | MWIR/LWIR transition | 5550 ± 50 – 7650 ± 50 | 5700-7450 | T≥90% | 1500-10000 nm; T<1% | Germanium | 1.5 |
| STO-WBP5550~7700 | MWIR/LWIR transition | 5550 ± 50 – 7700 ± 50 | 5700-7500 | T≥85% | 1500-10000 nm; T<1% | Germanium | 1.5 |
| STO-WBP5600~6800 | MWIR/LWIR transition | 5600 ± 30 – 6800 ± 30 | 5700-6680 | T≥75% | 1500-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP6000~12100 | LWIR | 6000 ± 200 – 12100 ± 200 | 6200-11800 | T≥90% | 1000-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP6200~10200 | LWIR | 6200 ± 100 – 10200 ± 100 | 7000-9400 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP6220~7530 | MWIR/LWIR transition | 6220 ± 50 – 7530 ± 50 | 6450-7450 | T≥90% | 2000-15000 nm; T<3% | Germanium | 3 |
| STO-WBP6300~7600 | MWIR/LWIR transition | 6300 ± 50 – 7600 ± 50 | 6450-7450 | T≥90% | 2000-15000 nm; T<3% | Germanium | 3 |
| STO-WBP6300~9900 | LWIR | 6300 ± 100 – 9900 ± 100 | 7000-9400 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP6400~10100 | LWIR | 6400 ± 100 – 10100 ± 100 | 7000-9400 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.8 |
| STO-WBP6420~10100 | LWIR | 6420 ± 50 – 10100 ± 50 | 7000-9400 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3 |
| STO-WBP6450~10750 | LWIR | 6450 ± 100 – 10750 ± 100 | 6600-10600 | T≥90% | 1500-14000 nm; T<1% | Germanium | 1 |
| STO-WBP6450~7750 | MWIR/LWIR transition | 6450 ± 50 – 7750 ± 50 | 6650-7550 | T≥90% | 2000-15000 nm; T<3% | Germanium | 3 |
| STO-WBP6550~8250 | MWIR/LWIR transition | 6550 ± 100 – 8250 ± 100 | 6700-8100 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP6600~8300 | MWIR/LWIR transition | 6600 ± 100 – 8300 ± 100 | 6750-8150 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP6650~8750 | MWIR/LWIR transition | 6650 ± 50 – 8750 ± 50 | 6800-8500 | T≥75% | 1500-11000 nm; T<3% | Germanium | 0.3 |
| STO-WBP6650~9760 | LWIR | 6650 ± 50 – 9760 ± 50 | 7000-9400 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP6800~8100 | MWIR/LWIR transition | 6800 ± 80 – 8100 ± 80 | 7100-7800 | T≥90% | 200-12000 nm; T<1% | Silicon | 1 |
| STO-WBP6800~8300 | MWIR/LWIR transition | 6800 ± 100 – 8300 ± 100 | 6950-8150 | T≥85% | 400-11000 nm; T<1% | Silicon | 0.5 |
| STO-WBP7100~8400 | MWIR/LWIR transition | 7100 ± 80 – 8400 ± 80 | 7400-8100 | T≥90% | 200-12000 nm; T<1% | Silicon | 1 |
| STO-WBP7200~8500 | MWIR/LWIR transition | 7200 ± 80 – 8500 ± 80 | 7500-8200 | T≥90% | 200-12000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP7200~9400 | LWIR | 7200 ± 50 – 9400 ± 50 | 7300-9100 | T≥90% | 6400-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7250~7850 | MWIR/LWIR transition | 7250 ± 100 – 7850 ± 100 | 7350-7750 | T≥80% | 3300-20000 nm; T<1% | Germanium | 1, 2 |
| STO-WBP7350~8080 | MWIR/LWIR transition | 7350 ± 50 – 8080 ± 50 | 7510-7980 | T≥90% | 400-12000 nm; T<3% | Germanium | 0.3 |
| STO-WBP7400~8400 | MWIR/LWIR transition | 7400 ± 50 – 8400 ± 50 | 7600-8200 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7400~8430 | MWIR/LWIR transition | 7400 ± 70 – 8430 ± 70 | 7600-8100 | T≥85% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7400~8500 | MWIR/LWIR transition | 7400 ± 50 – 8500 ± 50 | 7600-8200 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7400~9500 | LWIR | 7400 ± 50 – 9500 ± 50 | 7500-9400 | T≥90% | 1500-13000 nm; T<1% | Germanium | 0.6 |
| STO-WBP7450~10200 | LWIR | 7450 ± 50 – 10200 ± 50 | 7600-10000 | T≥85% | 1000-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7450~13600 | LWIR | 7450 ± 50 – 13600 ± 100 | 7700-13300 | T≥75% | 2000-19000 nm; T<1% | Silicon | 0.5 |
| STO-WBP7450~8500 | MWIR/LWIR transition | 7450 ± 50 – 8500 ± 50 | 7600-8100 | T≥75% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7450~9650 | LWIR | 7450 ± 50 – 9650 ± 50 | 7700-9400 | T≥85% | 1500-12000 nm; T<1% | Germanium | 0.3, 0.6 |
| STO-WBP7400~9900 | LWIR | 7460 ± 50 – 9960 ± 50 | 7660-9760 | T≥90% | 460-16060 nm; T<1% | Germanium | 0.3 |
| STO-WBP7460~9630 | LWIR | 7460 ± 50 – 9630 ± 50 | 7550-9600 | T≥90% | 1500-13000 nm; T<1% | Germanium | 1 |
| STO-WBP7480~9380 | LWIR | 7480 ± 70 – 9380 ± 70 | 7700-9100 | T≥80% | 500-10080 nm; T<1% | Germanium | 2 |
| STO-WBP7500~7900 | MWIR/LWIR transition | 7500 ± 70 – 7900 ± 70 | 7600-7800 | T≥85% | 400-12075 nm; T<1% | Germanium | 0.3 |
| STO-WBP7500~8400 | MWIR/LWIR transition | 7500 ± 50 – 8400 ± 50 | 7700-8100 | T≥85% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7500~8500 | LWIR | 7500 ± 50 – 8500 ± 50 | 7700-8200 | T≥85% | 200-16000 nm; T<1% | Silicon | 0.5, 1 |
| STO-WBP7500~8550 | LWIR | 7500 ± 50 – 8550 ± 50 | 7700-8200 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7500~8600 | LWIR | 7500 ± 50 – 8600 ± 50 | 7700-8300 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7500~9300 | LWIR | 7500 ± 50 – 9300 ± 50 | 7700-9000 | T≥85% | 1000-13900 nm; T<1% | Germanium | 0.3 |
| STO-WBP7500~9400 | LWIR | 7500 ± 50 – 9400 ± 50 | 8000-9000 | T≥85% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7550~13700 | LWIR | 7550 ± 50 – 13700 ± 100 | 7750-13400 | T≥85% | 2000-19000 nm; T<1% | Germanium | 0.7, 1 |
| STO-WBP7550~13950 | LWIR | 7550 ± 100 – 13950 ± 100 | 7750-13400 | T≥80% | 2000-19000 nm; T<1% | Germanium | 1 |
| STO-WBP7550~8600 | LWIR | 7550 ± 70 – 8600 ± 70 | 7800-8300 | T≥85% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7550~9800 | LWIR | 7550 ± 50 – 9800 ± 50 | 7700-9550 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP7575~7975 | MWIR/LWIR transition | 7575 ± 50 – 7975 ± 50 | 7675-7875 | T≥85% | 400-12075 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~10100 | LWIR | 7600 ± 70 – 10100 ± 100 | 7770-9900 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~10160 | LWIR | 7600 ± 100 – 10160 ± 100 | 7800-9800 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~8100 | MWIR/LWIR transition | 7600 ± 100 – 8100 ± 100 | 7700-8000 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~8600 | LWIR | 7600 ± 50 – 8600 ± 50 | 7800-8300 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7600~9300 | LWIR | 7600 ± 50 – 9300 ± 50 | 7700-9000 | T≥85% | 1000-13900 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~9500 | LWIR | 7600 ± 50 – 9500 ± 50 | 8000-9200 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~9600 | LWIR | 7600 ± 50 – 9600 ± 50 | 7800-9300 | T≥85% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~9700 | LWIR | 7600 ± 50 – 9700 ± 50 | 8000-9500 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~9730 | LWIR | 7600 ± 50 – 9730 ± 50 | 7800-9500 | T≥85% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7600~9950 | LWIR | 7600 ± 50 – 9950 ± 50 | 7900-9600 | T≥85% | 6400-13000 nm; T<1% | Germanium | 0.6 |
| STO-WBP7630~8070 | MWIR/LWIR transition | 7630 ± 70 – 8070 ± 70 | 7730-7970 | T≥85% | 400-12075 nm; T<1% | Germanium | 0.3 |
| STO-WBP7650~10400 | LWIR | 7650 ± 50 – 10400 ± 50 | 7800-10250 | T≥85% | 1000-12000 nm; T<1% | Germanium | 0.38 |
| STO-WBP7650~13900 | LWIR | 7650 ± 50 – 13900 ± 100 | 7800-13400 | T≥85% | 2000-19000 nm; T<1% | Germanium | 0.7, 1 |
| STO-WBP7650~14100 | LWIR | 7650 ± 50 – 14100 ± 100 | 7750-13400 | T≥85% | 2000-19000 nm; T<1% | Germanium | 0.4, 0.7, 1 |
| STO-WBP7650~8690 | LWIR | 7650 ± 70 – 8690 ± 70 | 7900-8400 | T≥80% | 200-16000 nm; T<1% | Silicon | 1 |
| STO-WBP7650~9870 | LWIR | 7650 ± 50 – 9870 ± 50 | 8000-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7700~13500 | LWIR | 7700 ± 200 – 13500 ± 500 | 7900-13000 | T≥85% | 2000-19000 nm; T<1% | Germanium | 1 |
| STO-WBP7700~14250 | LWIR | 7700 ± 100 – 14250 ± 100 | 7750-13400 | T≥85% | 2000-19000 nm | Germanium | 0.4, 1 |
| STO-WBP7700~8200 | MWIR/LWIR transition | 7700 ± 100 – 8200 ± 100 | 7810-8110 | T≥80% | 1500-13000 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP7700~9400 | LWIR | 7700 ± 50 – 9400 ± 50 | 7850-9200 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7700~9600 | LWIR | 7700 ± 100 – 9600 ± 100 | 7950-9450 | T≥90% | 400-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7700~9650 | LWIR | 7700 ± 50 – 9650 ± 50 | 8000-9400 | T≥85% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7700~9850 | LWIR | 7700 ± 100 – 9850 ± 100 | 7870-9570 | T≥85% | 1500-14070 nm; T<1% | Germanium | 0 |
| STO-WBP7700~9900 | LWIR | 7700 ± 50 – 9900 ± 50 | 8000-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7700~9980 | LWIR | 7700 ± 50 – 9980 ± 50 | 8000-9700 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.9 |
| STO-WBP7730~10250 | LWIR | 7730 ± 70 – 10250 ± 100 | 7900-10050 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7730~9950 | LWIR | 7730 ± 50 – 9950 ± 50 | 8100-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~10000 | LWIR | 7750 ± 50 – 10000 ± 50 | 8100-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~10050 | LWIR | 7750 ± 50 – 10050 ± 50 | 7700-10000 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~10100 | LWIR | 7750 ± 50 – 10100 ± 100 | 7700-10000 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3, 0.6 |
| STO-WBP7750~10250 | LWIR | 7750 ± 50 – 10250 ± 50 | 7800-9800 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~10300 | LWIR | 7750 ± 50 – 10300 ± 50 | 7900-10150 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~10500 | LWIR | 7750 ± 100 – 10500 ± 100 | 7950-10300 | T≥90% | 500-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~9700 | LWIR | 7750 ± 50 – 9700 ± 50 | 8100-9500 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7750~9980 | LWIR | 7750 ± 50 – 9980 ± 50 | 8000-9700 | T≥80% | 1500-12000 nm; T<1% | Silicon | 0.5 |
| STO-WBP7770~10580 | LWIR | 7770 ± 50 – 10580 ± 50 | 7950-10400 | T≥90% | 500-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7780~9280 | LWIR | 7780 ± 100 – 9280 ± 100 | 8100-9000 | T≥90% | 3030-14140 nm; T<1% | Germanium | 0.3 |
| STO-WBP7780~9480 | LWIR | 7780 ± 100 – 9480 ± 100 | 8100-9000 | T≥90% | 3030-14140 nm; T<1% | Germanium | 0.3 |
| STO-WBP7800~10050 | LWIR | 7800 ± 50 – 10050 ± 50 | 8100-9700 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7800~10100 | LWIR | 7800 ± 50 – 10100 ± 50 | 7900-10000 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7800~10350 | LWIR | 7800 ± 70 – 10350 ± 100 | 7970-10150 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7800~10600 | LWIR | 7800 ± 100 – 10600 ± 100 | 8000-10400 | T≥85% | 1000-12000 nm; T<1% | Germanium | 0.9 |
| STO-WBP7800~12100 | LWIR | 7800 ± 100 – 12100 ± 100 | 8100-11900 | T≥85% | 1000-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP7800~12200 | LWIR | 7800 ± 75 – 12200 ± 75 | 8100-11950 | T≥85% | 1000-15000 nm; T<1% | Germanium | 0.5, 0.9 |
| STO-WBP7800~14200 | LWIR | 7800 ± 100 – 14200 ± 100 | 8300-13500 | T≥85% | 1500-19000 nm; T<1% | Germanium | 0.7 |
| STO-WBP7800~9650 | LWIR | 7800 ± 50 – 9650 ± 50 | 8200-9300 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3, 0.7 |
| STO-WBP7800~9700 | LWIR | 7800 ± 50 – 9700 ± 50 | 8100-9500 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850-13650 | LWIR | 7850 ± 50 – 13650 ± 50 | 8100-13300 | T≥70% | 1500-20000 nm; T<1.5% | Silicon | 1 |
| STO-WBP7850~10450 | LWIR | 7850 ± 50 – 10450 ± 50 | 8000-10100 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~10600 | LWIR | 7850 ± 50 – 10600 ± 50 | 8000-10350 | T≥85% | 1000-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~10650 | LWIR | 7850 ± 100 – 10650 ± 100 | 8050-10450 | T≥90% | 500-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~13750 | LWIR | 7850 ± 50 – 13750 ± 50 | 8100-13300 | T≥70% | 1500-20000 nm; T<1.5% | Silicon | 0.5 |
| STO-WBP7850~13900 | LWIR | 7850 ± 100 – 13900 ± 400 | 8200-13400 | T≥80% | 2000-19000 nm; T<1% | Germanium | 1 |
| STO-WBP7850~9650 | LWIR | 7850 ± 50 – 9650 ± 50 | 7900-9400 | T≥90% | 400-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~9700 | LWIR | 7850 ± 50 – 9700 ± 50 | 8300-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~9750 | LWIR | 7850 ± 50 – 9750 ± 50 | 7950-9450 | T≥90% | 400-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7850~9850 | LWIR | 7850 ± 50 – 9850 ± 50 | 7900-9400 | T≥90% | 400-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7800~10200 | LWIR | 7880 ± 100 – 10300 ± 100 | 8080-10100 | T≥90% | 406-14140 nm; T<1% | Germanium | 0.5 |
| STO-WBP7880~10400 | LWIR | 7880 ± 100 – 10400 ± 100 | 8100-10100 | T≥90% | 406-14140 nm; T<1% | Germanium | 0.5 |
| STO-WBP7900~12000 | LWIR | 7900 ± 100 – 12000 ± 100 | 8100-11800 | T≥90% | 400-20000 nm; T<1% | Germanium | 1 |
| STO-WBP7900~12200 | LWIR | 7900 ± 100 – 12200 ± 100 | 8150-11900 | T≥85% | 1000-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP7900~9800 | LWIR | 7900 ± 50 – 9800 ± 50 | 8300-9300 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7920~10350 | LWIR | 7920 ± 70 – 10350 ± 100 | 8090-10150 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7920~10500 | LWIR | 7920 ± 70 – 10500 ± 100 | 8090-10300 | T≥90% | 400-16000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7950~10050 | LWIR | 7950 ± 50 – 10050 ± 50 | 8300-9700 | T≥92% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7950~10400 | LWIR | 7950 ± 50 – 10400 ± 50 | 8500-10100 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.9 |
| STO-WBP7950~13850 | LWIR | 7950 ± 50 – 13850 ± 50 | 8300-13300 | T≥75% | 1500-20000 nm; T<1.5% | Silicon | 0.4 |
| STO-WBP7950~9850 | LWIR | 7950 ± 50 – 9850 ± 50 | 8200-9600 | T≥90% | 1500-12000 nm; T<1% | Germanium | 0.3 |
| STO-WBP7980~9680 | LWIR | 7980 ± 100 – 9680 ± 100 | 8030-9530 | T≥90% | 3030-14140 nm; T<1% | Germanium | 0.3 |
| STO-WBP8000~10100 | LWIR | 8000 ± 100 – 10100 ± 100 | 8200-9900 | T≥90% | 1500-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP8000~10700 | LWIR | 8000 ± 200 – 10700 ± 200 | 8600-10000 | T≥90% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP8000~11300 | LWIR | 8000 ± 50 – 11300 ± 50 | 8300-11200 | T≥90% | 400-12200 nm; T<1% | Germanium | 0.5 |
| STO-WBP8000~11400 | LWIR | 8000 ± 50 – 11400 ± 50 | 8300-11000 | T≥90% | 400-12200 nm; T<1% | Germanium | 0.5 |
| STO-WBP8000~12000 | LWIR | 8000 ± 100 – 12000 ± 100 | 8200-11800 | T≥90% | 400-20000 nm; T<1% | Germanium | 1 |
| STO-WBP8000~12200 | LWIR | 8000 ± 100 – 12200 ± 100 | 8300-11800 | T≥90% | 1000-15000 nm; T<1% | Germanium | 0.5, 0.9 |
| STO-WBP8000~12400 | LWIR | 8000 ± 100 – 12400 ± 100 | 8300-12000 | T≥90% | 1000-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP8000~13900 | LWIR | 8000 ± 50 – 13900 ± 50 | 8300-13600 | T≥75% | 1500-20000 nm; T<1.5% | Silicon | 1 |
| STO-WBP8050~13850 | LWIR | 8050 ± 50 – 13850 ± 50 | 8500-13300 | T≥70% | 1500-20000 nm; T<1.5% | Silicon | 1 |
| STO-WBP8080~9880 | LWIR | 8080 ± 100 – 9880 ± 100 | 8500-9500 | T≥90% | 3030-14140 nm; T<1% | Germanium | 0.3 |
| STO-WBP8100~11700 | LWIR | 8100 ± 100 – 11700 ± 100 | 8400-11400 | T≥90% | 400-12200 nm; T<1% | Germanium | 0.5 |
| STO-WBP8100~12800 | LWIR | 8100 ± 100 – 12800 ± 100 | 8300-12600 | T≥85% | 1000-15000 nm; T<1% | Germanium | 0.5 |
| STO-WBP8100~9000 | LWIR | 8100 ± 100 – 9000 ± 100 | 8250-8850 | T≥85% | 490-10090 nm; T<1% | Germanium | 0.9, 1 |
| STO-WBP8200-10100 | LWIR | 8200 ± 400 – 10100 ± 420 | 8800-9500 | T≥88% | 2000-12000 nm; T<1% | Germanium | 0.5, 0.6 |
| STO-WBP8200-12000 | LWIR | 8200 ± 100 – 12000 ± 100 | 8400-11800 | T≥90% | 400-20000 nm; T<1% | Germanium | 1 |
| STO-WBP8200~10900 | LWIR | 8200 ± 200 – 10900 ± 200 | 8600-10000 | T≥90% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP8230~12400 | LWIR | 8230 ± 150 – 12400 ± 200 | 8800-11000 | T≥75% | 7000-15000 nm; T<1% | Silicon | 0.5 |
| STO-WBP8200~9000 | LWIR | 8240 ± 50 – 9140 ± 50 | 8340-9040 | T≥90% | 490-10090 nm; T<1% | Germanium | 1 |
| STO-WBP8300-8900 | LWIR | 8300 ± 100 – 8900 ± 100 | 8400-8700 | T≥85% | 1570-14070 nm; T<1% | Germanium | 0 |
| STO-WBP8300~13000 | LWIR | 8300 ± 160 – 13000 ± 160 | 8800-12500 | T≥75% | 7000-15000 nm; T<1% | Silicon | 0.5 |
| STO-WBP8300~9200 | LWIR | 8300 ± 100 – 9200 ± 100 | 8430-9090 | T≥85% | 490-10090 nm; T<1% | Germanium | 1 |
| STO-WBP8300~9300 | LWIR | 8300 ± 100 – 9300 ± 100 | 8500-9100 | T≥85% | 490-10090 nm; T<1% | Germanium | 1 |
| STO-WBP8400~13000 | LWIR | 8400 ± 150 – 13000 ± 150 | 8900-12500 | T≥75% | 7000-15000 nm; T<1% | Silicon | 0.5 |
| STO-WBP8400~14700 | LWIR | 8400 ± 200 – 14700 ± 300 | 9000-13000 | T≥75% | 400-20000 nm; T<1% | Silicon | 0.5 |
| STO-WBP8500-12250 | LWIR | 8500 ± 100 – 12250 ± 100 | 8700-12100 | T≥85% | 1500-15500 nm; T<1% | Germanium | 0.3 |
| STO-WBP8500-9050 | LWIR | 8500 ± 100 – 9050 ± 100 | 8650-8900 | T≥85% | 1570-14070 nm; T<1% | Germanium | 0 |
| STO-WBP8550-12350 | LWIR | 8550 ± 50 – 12350 ± 50 | 8700-12200 | T≥85% | 1500-15500 nm; T<1% | Germanium | 0.3, 0.5 |
| STO-WBP8600-12500 | LWIR | 8600 ± 150 – 12500 ± 150 | 8980-12000 | T≥85% | 1500-15500 nm; T<1% | Germanium | 0.3, 0.8 |
| STO-WBP8700-9400 | LWIR | 8700 ± 100 – 9400 ± 100 | 8900-9300 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8770-9550 | LWIR | 8770 ± 50 – 9550 ± 50 | 9000-9400 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8800-9700 | LWIR | 8850 ± 50 – 9650 ± 50 | 9000-9500 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8900-9500 | LWIR | 8900 ± 100 – 9500 ± 100 | 9000-9400 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8900-9600 | LWIR | 8900 ± 100 – 9600 ± 100 | 9000-9500 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8900-9700 | LWIR | 8900 ± 100 – 9700 ± 100 | 9100-9500 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP8900-9800 | LWIR | 8900 ± 100 – 9800 ± 100 | 9100-9500 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP9000-9850 | LWIR | 9000 ± 100 – 9850 ± 100 | 9100-9500 | T≥85% | 1500-13000 nm; T<1% | Germanium | 0.3 |
| STO-WBP9600-14800 | LWIR | 9600 ± 100 – 14800 ± 100 | 9900-14400 | T≥85% | 400-20000 nm; T<1% | Zinc selenide | 0.3 |
| STO-WBP9800-15100 | LWIR | 9800 ± 100 – 15100 ± 100 | 11000-14700 | T≥85% | 400-20000 nm; T<1% | Zinc selenide | 0.3 |
| STO-WBP10100-11100 | LWIR | 10100 ± 100 – 11100 ± 100 | 10350-10850 | T≥90% | 7600-14000 nm; T<1% | Germanium | 0.3 |
| STO-WBP10160-11180 | LWIR | 10160 ± 50 – 11180 ± 50 | 10310-11030 | T≥90% | 2000-15000 nm; T<1% | Germanium | 3 |
| STO-WBP10200-11600 | LWIR | 10200 ± 100 – 11600 ± 100 | 10600-11300 | T≥85% | 7000-14000 nm; T<1% | Germanium | 1 |
| STO-WBP10240-10840 | LWIR | 10240 ± 50 – 10840 ± 50 | 10340-10740 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10240-11260 | LWIR | 10240 ± 50 – 11260 ± 50 | 10400-11100 | T≥90% | 2000-15000 nm; T<1% | Germanium | 3 |
| STO-WBP10290-11490 | LWIR | 10290 ± 100 – 11490 ± 100 | 10490-11290 | T≥80% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP10300-11400 | LWIR | 10300 ± 100 – 11400 ± 100 | 10500-11100 | T≥80% | 7000-14000 nm; T<1% | Germanium | 0.9 |
| STO-WBP10300-11500 | LWIR | 10300 ± 120 – 11500 ± 120 | 10800-11300 | T≥85% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP10250-10850 | LWIR | 10340 ± 50 – 10940 ± 50 | 10440-10840 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10340-10840 | LWIR | 10340 ± 50 – 10840 ± 50 | 10440-10740 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10340-11040 | LWIR | 10340 ± 50 – 11040 ± 50 | 10440-10940 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10360-10860 | LWIR | 10360 ± 50 – 10860 ± 50 | 10460-10760 | T≥90% | 1060-14060 nm; T<1% | Germanium | 0.3 |
| STO-WBP10400-11300 | LWIR | 10400 ± 100 – 11300 ± 100 | 10700-11100 | T≥90% | 7000-14000 nm; T<1% | Germanium | 1 |
| STO-WBP10440-11040 | LWIR | 10440 ± 50 – 11040 ± 50 | 10600-10900 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10540-11140 | LWIR | 10540 ± 50 – 11140 ± 50 | 10700-11000 | T≥80% | 590-14090 nm; T<1% | Germanium | 0.3 |
| STO-WBP10600-11450 | LWIR | 10600 ± 100 – 11450 ± 100 | 10700-11350 | T≥85% | 7500-14000 nm; T<1% | Germanium | 0.7 |
| STO-WBP10600-11800 | LWIR | 10600 ± 100 – 11800 ± 100 | 10980-11750 | T≥80% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP11300-15600 | LWIR | 11300 ± 100 – 15600 ± 100 | 11500-15000 | T≥70% | 10080-16080 nm; T<1% | Wedge germanium | 2 |
| STO-WBP11400-12380 | LWIR | 11400 ± 60 – 12380 ± 60 | 11550-12230 | T≥85% | 2000-15000 nm; T<1% | Germanium | 3 |
| STO-WBP11400-12600 | LWIR | 11490 ± 100 – 12690 ± 100 | 12000-12490 | T≥85% | 1590-16090 nm; T<1% | Germanium | 0.8 |
| STO-WBP11500-12500 | LWIR | 11500 ± 50 – 12500 ± 50 | 11650-12350 | T≥85% | 2000-15000 nm; T<1% | Germanium | 3 |
| STO-WBP11570-12570 | LWIR | 11570 ± 50 – 12570 ± 50 | 11770-12370 | T≥85% | 2000-15000 nm; T<1% | Germanium | 3 |
Additional longpass models for transmitting longer-wavelength infrared energy while blocking shorter wavelengths.
| Model | Spectral Range | Cut-On (nm) | Transmittance (T) | Transmission Range (nm) | Blocking Summary | Substrate | Substrate Thickness (mm) |
|---|---|---|---|---|---|---|---|
| STO-LP1500 | SWIR | 1500 ± 100 | T≥85% | 1600-5300 | 400-1400 nm; T<1% | Sapphire | 0.3 |
| STO-LP1700 | SWIR | 1700 ± 100 | T≥80% | 1750-3400 | 800-1600 nm; T<1% | Silicon | 0.5 |
| STO-LP1800 | SWIR | 1800 ± 50 | T≥80% | 1850-3400 | 800-1600 nm; T<1% | Silicon | 0.5 |
| STO-LP2200 | SWIR | 2200 ± 100 | T≥90% | 2700-3500 | 400-1800 nm; T<1% | Silicon | 0.762 |
| STO-LP2250 | SWIR | 2250 ± 50 | T≥90% | 2400-3600 | 1500-2100 nm; T<1% | Silicon | 1 |
| STO-LP2900 | MWIR | 2900 ± 50 | T≥90% | 3050-5100 | 1300-2600 nm; T<1% | Zinc selenide | 0.5 |
| CUT3200 | MWIR | 3400 ± 10 | T≥90% | 3480-5350 | 1500-3266 nm; T<1% | Germanium | 0.3 |
| CUT3500 | MWIR | 3670 ± 50 | T≥90% | 3800-5600 | 1500-3500 nm; T<1% | Germanium | 1, 2.5 |
| STO-LP3710+DLC | MWIR | 3710 ± 50 | T≥70% | 4000-5500 | 1500-3400 nm; T<1% | Silicon | 0.5 |
| STO-LP3730 | MWIR | 3730 ± 50 | T≥90% | 4400-4900 | 1700-3700反射; T<1% | Germanium | 0.5, 0.7 |
| STO-LP3760 | MWIR | 3760 ± 60 | T≥90% | 3960-4800 | 1600-3480 nm; T<1% | Germanium | 0.5 |
| STO-LP3850 | MWIR | 3850 ± 50 | T≥90% | 4000-5000 | 1500-3500 nm; T<1% | Germanium | 0.5 |
| STO-LP4730 | MWIR | 4730 ± 200 | T≥80% | 4900-5150 | 400-4200 nm; T<1% | Sapphire | 1 |
| STO-LP5800 | MWIR/LWIR transition | 5800 ± 150 | T≥80% | 6000-13000 | 2000-5500 nm; T<1% | Silicon | 0.5 |
| STO-LP6200 | MWIR/LWIR transition | 6200 ± 100 | T≥90% | 6400-12600 | 2000-6000 nm; T<1% | Germanium | 0.9, 3, 3.5 |
| STO-LP6300 | MWIR/LWIR transition | 6300 ± 100 | T≥90% | 6550-14500 | 1500-6100 nm; T<1% | Germanium | 0.3 |
| STO-LP6400 | MWIR/LWIR transition | 6400 ± 100 | T≥90% | 6500-12600 | 2000-6000 nm; T<1% | Germanium | 0.9, 3 |
| STO-LP6500 | MWIR/LWIR transition | 6500 ± 50 | T≥85% | 6800-11000 | 1500-6200 nm; T<1% | Germanium | 0.9, 2.8, 3 |
| STO-LP7250 | MWIR/LWIR transition | 7250 ± 50 | T≥90% | 7450-11000 | 1400-7000 nm; T<1% | Germanium | 2.5 |
| STO-LP7570 | MWIR/LWIR transition | 7570 ± 70 | T≥90% | 7770-12600 | 1010-7320 nm; T<1% | Germanium | 0.3 |
| STO-LP7675 | MWIR/LWIR transition | 7675 ± 75 | T≥90% | 8000-14000 | 1500-7550 nm; T<1% | Germanium | 0.3 |
| STO-LP7770 | MWIR/LWIR transition | 7770 ± 70 | T≥90% | 7870-12600 | 1010-7320 nm; T<1% | Germanium | 0.3 |
| STO-LP7950 | MWIR/LWIR transition | 7950 ± 150 | T≥85% | 8050-14000 | 190-7800 nm; T<1% | Germanium | 1 |
| STO-LP9000 | LWIR | 9000 ± 300 | T≥90% | 9500-12500 | 400-8500 nm; T<1% | Germanium | 0.5 |
| STO-LP10000 | LWIR | 10000 ± 70 | T≥90% | 10150-14300 | 1500-9800 nm; T<1% | Zinc selenide | 0.5 |
| STO-LP10015 | LWIR | 10015 ± 100 | T≥85% | 10450-14500 | 1500-9800 nm; T<1% | Germanium | 0.3 |
| STO-LP10600 | LWIR | 10600 ± 100 | T≥80% | 11000-14000 | 1500-10000 nm; T<1% | Germanium | 2.7 |
| STO-LP10900 | LWIR | 10900 ± 100 | T≥80% | 11200-15400 | 1500-10750 nm; T<1% | Germanium | 1 |
| STO-LP11050 | LWIR | 11050 ± 50 | T≥80% | 11200-15400 | 1500-10750 nm; T<1% | Germanium | 0.8, 0.9 |
| STO-LP11190 | LWIR | 11190 ± 100 | T≥80% | 11500-15700 | 1500-10750 nm; T<1% | Germanium | 0.8, 1 |
| STO-LP11600 | LWIR | 11600 ± 100 | T≥85% | 11800-12200 | 7000-11200 nm; T<1% | Germanium | 0.9 |
| STO-LP11700 | LWIR | 11700 ± 100 | T≥80% | 11900-12300 | 7000-11200 nm; T<1% | Germanium | 0.8, 0.9, 1, 2.7 |
Additional infrared anti-reflection coating ranges. Dimensions and material details remain quotation-stage reference data unless confirmed in the source.
| Coating Model | Spectral Range | Transmission Range (nm) | Average Transmittance | Substrate Thickness (mm) |
|---|---|---|---|---|
| STO-AR1000~2600 | SWIR | 1000-2600 | T≥90% | 1, 1.6, 6 |
| STO-AR1000~5100 | MWIR | 1000-5100 | T≥80% | 0.5, 1 |
| STO-AR1200~5500 | MWIR | 1200-5500 | T≥85% | 0.5 |
| STO-AR1250-1650 | SWIR | 1250-1650 | T≥99% | 0.3 |
| STO-AR1500~1600 | SWIR | 1500-1600 | T≥97% | 0.3, 1 |
| STO-AR1580~6900 | MWIR | 1580-6900 | T≥85% | 0.5, 1 |
| STO-AR1600~5300 | MWIR | 1600-5300 | T≥90% | 0.5, 1 |
| STO-AR1800~10000 | MWIR/LWIR transition | 1800-10000 | T≥90% | 1.2 |
| STO-AR1800~6000 | MWIR | 1500-5000 | T≥95% | 0.5 |
| STO-AR2000~12000 | MWIR/LWIR transition | 2000-12000 | T≥85% | 0.5 |
| STO-AR2000~14000 | LWIR | 2000-14000 | T≥80% | 0.5 |
| STO-AR2000~5600 | MWIR | 2000-5600 | T≥85% | 0.3, 1 |
| STO-AR2000~6000 | MWIR | 2000-6000 | T≥90% | 1, 5 |
| STO-AR2100~5500 | MWIR | 2100-5500 | T≥90% | 0.9, 1 |
| STO-AR2300~12600 | MWIR/LWIR transition | 2300-12600 | T≥90% | 1, 1.6 |
| STO-AR2300~5500 | MWIR | 2300-5500 | T≥92% | 1 |
| STO-AR2400~14000 | LWIR | 2400-14000 | T≥80% | 0.8, 2 |
| STO-AR2500~12000 | MWIR/LWIR transition | 2500-12000 | T≥90% | 1, 1.6 |
| STO-AR2500~12600 | MWIR/LWIR transition | 2500-12600 | T≥90% | 1.6 |
| STO-AR2500~14000 | LWIR | 2500-14000 | T≥85% | 0.5 |
| STO-AR2500~3300 | MWIR | 2500-3300 | T≥90% | 0.65, 1, 3 |
| STO-AR2500~4600 | MWIR | 2500-4600 | T≥90% | 0.5 |
| STO-AR2500~4700 | MWIR | 2500-4700 | T≥90% | 0.7, 0.8, 2.9, 12 |
| STO-AR2500~6000 | MWIR | 2500-6000 | T≥85% | 0.5 |
| STO-AR2600~5200 | MWIR | 2600-5200 | T≥90% | 0.5, 4 |
| STO-AR2680~4520 | MWIR | 2680-4520 | T≥90% | 0.5, 2.8, 3 |
| STO-AR2700~5300 | MWIR | 2700-5300 | T≥95% | 0.5 |
| STO-AR2700~9100 | MWIR/LWIR transition | 2700-9100 | T≥90% | 0.5, 5 |
| STO-AR2800~4900 | MWIR | 2800-4900 | T≥90% | 0.9 |
| STO-AR2800~5500 | MWIR | 2800-5500 | T≥90% | 0.5 |
| STO-AR2850~4850 | MWIR | 2850-4850 | T≥90% | 0.5 |
| STO-AR2900~5400 | MWIR | 2900-5400 | T≥90% | 6 |
| STO-AR3000~11000 | MWIR/LWIR transition | 3000-11000 | T≥90% | 0.38, 1.6 |
| STO-AR3000~12600 | MWIR/LWIR transition | 3000-12600 | T≥90% | 0.4, 0.9, 1.6 |
| STO-AR3000~14000 | LWIR | 3000-14000 | T≥90% | 0.3, 0.6, 0.7, 0.75, 0.8, 0.9, 1 |
| STO-AR3100~3600 | MWIR | 3100-3600 | T≥90% | 1 |
| STO-AR3200~3600 | MWIR | 3200-3600 | T≥85% | 0.45, 0.9 |
| STO-AR3200~5500 | MWIR | 3200-5500 | T≥85% | 0.9, 1 |
| STO-AR3400~12500 | MWIR/LWIR transition | 3400-12500 | T≥90% | 1 |
| STO-AR3500~10000 | MWIR/LWIR transition | 3500-10000 | T≥90% | 0.5, 1 |
| STO-AR3500~5000 | MWIR | 3500-5000 | T≥95% | 0.5, 1, 1.6 |
| STO-AR3600~4800 | MWIR | 3600-4800 | T≥95% | 0.5, 1 |
| STO-AR3600~5000 | MWIR | 3600-5000 | T≥95% | 0.5 |
| STO-AR3700~4800 | MWIR | 3700-4800 | T≥90% | 0.5, 1 |
| STO-AR3700~5000 | MWIR | 3700-5000 | T≥95% | 0.9 |
| STO-AR400~1700 | NIR | 400-1700 | T≥90% | 0.85, 1 |
| STO-AR400~3000 | SWIR | 400-3000 | T≥85% | 1.5 |
| STO-AR400~880 | NIR | 400-880 | T≥90% | 0.5 |
| STO-AR420~780 | NIR | 420-780 | T≥90% | 1 |
| STO-AR4300 | IR | 4300 | T≥90% | 1 |
| STO-AR4500~13000 | LWIR | 4500-13000 | T≥90% | 0.8, 1 |
| STO-AR5500~11000 | LWIR | 5500-11000 | T≥90% | 0.8, 2.5 |
| STO-AR5500~14000 | LWIR | 5500-14000 | T≥80% | 0.5 |
| STO-AR6000~10500 | LWIR | 6000-10500 | T≥90% | 0.9, 1 |
| STO-AR6000~11000 | LWIR | 6000-11000 | T≥90% | 2.5 |
| STO-AR6000~13000 | LWIR | 6000-13000 | T≥90% | 1 |
| STO-AR6000~18000 | LWIR | 6000-18000 | T≥48% | 0.8, 1 |
| STO-AR6200~12600 | LWIR | 6200-12600 | T≥90% | 0.5, 0.6, 0.9, 3, 6 |
| STO-AR6500~11000 | LWIR | 6500-11000 | T≥95% | 1 |
| STO-AR7000~12500 | LWIR | 7000-12500 | T≥95% | 0.4, 2.5, 2.8 |
| STO-AR7000~12600 | LWIR | 7000-12600 | T≥90% | 0.7, 0.9, 1, 3 |
| STO-AR7000~14000 | LWIR | 7000-14000 | T≥90% | 1 |
| STO-AR7000~14500 | LWIR | 7000-14500 | T≥90% | 0.8, 1 |
| STO-AR7000~14600 | LWIR | 7000-14600 | T≥90% | 0.9, 1, 3 |
| STO-AR7000~16000 | LWIR | 7000-16000 | T≥90% | 0.8, 0.9, 1, 3.5 |
| STO-AR7400~10700 | LWIR | 7400-10700 | T≥95% | 2.6, 3 |
| STO-AR7400~10900 | LWIR | 7400-10900 | T≥94% | 0.8, 2.9 |
| STO-AR7400~12800 | LWIR | 7400-12800 | T≥90% | 0.9, 1 |
| STO-AR7500~10100 | LWIR | 7500-10100 | T≥90% | 0.7, 0.9, 1, 2.9, 8.7 |
| STO-AR7500~10500 | LWIR | 7500-10500 | T≥93% | 0.7, 1 |
| STO-AR7500~10700 | LWIR | 7500-10700 | T≥90% | 1 |
| STO-AR7500~11000 | LWIR | 7500-11000 | T≥90% | 2.5, 2.8 |
| STO-AR7500~13000 | LWIR | 7500-13000 | T≥90% | 0.9, 5 |
| STO-AR7500~13500 | LWIR | 7500-13500 | T≥90% | 0.8 |
| STO-AR7500~9700 | LWIR | 7500-9700 | T≥85% | 0.75 |
| STO-AR7600~12700 | LWIR | 7600-12700 | T≥93% | 1 |
| STO-AR7700~11000 | LWIR | 7700-11000 | T≥95% | 0.9, 3 |
| STO-AR7700~9300 | LWIR | 7700-9300 | T≥93% | 0.3, 0.75 |
| STO-AR7800~10000 | LWIR | 7800-10000 | T≥95% | 0.9, 1 |
| STO-AR8000~10000 | LWIR | 8000-10000 | T≥92% | 0.9, 2.7, 2.8, 3 |
| STO-AR8000~13500 | LWIR | 8000-13500 | T≥90% | 3 |
| STO-AR8000~15000 | LWIR | 8000-15000 | T≥93% | 2 |
| STO-AR800~4000 | SWIR | 800-4000 | T≥80% | 1 |
| STO-AR9000~16500 | LWIR | 9000-16500 | T≥90% | 1.6 |
| STO-AR900~1700 | SWIR | 900-1700 | T≥90% | 1.6 |
| STO-AR9500~17000 | LWIR | 9500-17000 | T≥80% | 0.7, 1.6 |
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
Material choice can limit usable wavelength range before coating performance is considered. Confirm substrate first for IR applications.
For thermal or gas-sensing work, specify the target absorption band, blocking range, and operating environment.
The page covers near infrared, short-wave infrared, mid-wave infrared, and long-wave infrared filter needs where data is available.
Substrate materials have different transmission ranges, so the material must support the target infrared wavelength band.
Yes. Custom wavelength bands, sizes, substrate choices, and coating targets can be discussed for infrared systems.
Quality & Compliance
For OEM programs, laboratory instruments, and industrial systems, OPTOStokes keeps quality, material compliance, and engineering support visible from the start of supplier evaluation.
Process control, inspection records, and repeatable coating workflows for production optical components.
Compliance documentation can be prepared for qualified projects and regulated supply chains.
Wavelength, FWHM, substrate, AOI, size, and mounting requirements can be reviewed with engineering.
Share target wavelength, blocking level, transmittance, and drawing requirements for a focused quote.
Our engineers will help you select the perfect optical solution.