NIR, SWIR, MWIR et LWIR imposent des choix différents
Adaptez les filtres IR au matériau du détecteur, à la transmission du substrat et à la température de travail. Les bandes IR ne sont pas interchangeables.
OPTOStokes est la marque de filtres optiques d'Optofilters.com, proposant des filtres en stock et à traitements sur mesure pour UV, VIS, NIR et IR.
Examinez les filtres NIR, SWIR, MWIR et LWIR. Comparez passe-bande de l'IR moyen, filtres IR lointain, silicium, saphir, fenêtres germanium AR et fenêtres IR métallisées pour détection et imagerie.
Choisissez d'abord la région infrarouge, puis vérifiez sensibilité du détecteur, transmission du substrat, bande du traitement, environnement et montage. Les matériaux IR diffèrent souvent de ceux du visible.
Les filtres IR OPTOStokes couvrent le proche infrarouge (750-1100nm), SWIR 1.1-2.5µm, MWIR 3-5µm et LWIR 8-14µm. Le catalogue comprend aussi passe-bande étroits de l'IR moyen/lointain, passe-bande larges, passe-haut IR, traitements AR et fenêtres IR métallisées pour imagerie thermique, gaz, spectroscopie et boîtiers détecteurs.
| Modèle | CWL (nm) | Transmission | FWHM (nm) | Densité optique |
|---|---|---|---|---|
| STO-BP680 | 680 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1100 nm |
| STO-BP1120 | 1120 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1150 | 1150 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1173 | 1173 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1250 | 1250 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 700-1800 nm |
| STO-BP1285 | 1285 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1000-1700 nm |
| STO-BP1455 | 1455 ± 2 | T≥50% | 10-20 | OD ≥ 3 at 1200-1800 nm |
| STO-BP1535 | 1535 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1545 | 1545 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1550 | 1550 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1555 | 1555 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1570 | 1570 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1250-1700 nm |
| STO-BP1615 | 1615 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1620 | 1620 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1625 | 1625 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1655 | 1655 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1660 | 1660 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1680 | 1680 ± 10 | T≥90% | 10-20 | OD ≥ 3 at 800-3000 nm |
| STO-BP1685 | 1685 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1695 | 1695 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1935 | 1935 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1940 | 1940 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2050 | 2050 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2180 | 2180 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2230 | 2230 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2270 | 2270 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2340 | 2340 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1100 | 1100 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1120 | 1120 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1125 | 1125 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1150 | 1150 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1173 | 1173 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1200 | 1200 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1235 | 1235 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1245 | 1245 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1250 | 1250 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1290 | 1290 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1300 | 1300 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1320 | 1320 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1340 | 1340 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1380 | 1380 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1430 | 1430 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1445 | 1445 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1450 | 1450 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1530 | 1530 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1535 | 1535 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1540 | 1540 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1550 | 1550 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1570 | 1570 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1575 | 1575 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1600 | 1600 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1610 | 1610 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1630 | 1630 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1650 | 1650 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1654 | 1654 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1660 | 1660 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1680 | 1680 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1700 | 1700 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1714 | 1714 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1716 | 1716 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1780 | 1780 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1800 | 1800 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1810 | 1810 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1818 | 1818 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1830 | 1830 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1920 | 1920 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1930 | 1930 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1935 | 1935 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1940 | 1940 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1945 | 1945 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1950 | 1950 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| Modèle | Seuil de transmission (cut-on) (nm) | Transmission | Plage de transmission (nm) | Densité optique |
|---|---|---|---|---|
| STO-LP900 | 900 ± 5 | T≥90% | 910-1100 | OD ≥ 3 at 350-880 nm |
| STO-LP910 | 910 ± 5 | T≥90% | 920-1100 | OD ≥ 3 at 350-890 nm |
| STO-LP920 | 920 ± 5 | T≥90% | 930-1100 | OD ≥ 3 at 350-900 nm |
| STO-LP920 | 920 ± 10 | T≥90% | 940-1700 | OD ≥ 3 at 350-890 nm |
| STO-LP930 | 930 ± 5 | T≥90% | 940-1100 | OD ≥ 3 at 350-910 nm |
| STO-LP940 | 940 ± 5 | T≥90% | 950-1100 | OD ≥ 3 at 350-920 nm |
| STO-LP950 | 950 ± 5 | T≥90% | 970-1100 | OD ≥ 3 at 350-930 nm |
| STO-LP970 | 970 ± 5 | T≥90% | 980-1100 | OD ≥ 3 at 350-940 nm |
| STO-LP1000 | 1000 ± 10 | T≥90% | 1020-2000 | OD ≥ 3 at 350-970 nm |
| STO-LP1010 | 1010 ± 10 | T≥90% | 1030-1200 | OD ≥ 3 at 350-990 nm |
| STO-LP1060 | 1060 ± 10 | T≥88% | 1085-1100 | OD ≥ 3 at 350-1035 nm |
| STO-LP1150 | 1150 ± 10 | T≥90% | 1180-1700 | OD ≥ 3 at 700-1120 nm |
| STO-LP1170 | 1170 ± 10 | T≥90% | 1200-1700 | OD ≥ 3 at 700-1135 nm |
| STO-LP1200 | 1200 ± 10 | T≥90% | 1230-1800 | OD ≥ 3 at 350-1175 nm |
| STO-LP1250 | 1250 ± 10 | T≥90% | 1260-1750 | OD ≥ 3 at 350-1215 nm |
| STO-LP1270 | 1270 ± 10 | T≥90% | 1300-1800 | OD ≥ 3 at 350-1240 nm |
| STO-LP1380 | 1380 ± 10 | T≥90% | 1400-2150 | OD ≥ 3 at 700-1360 nm |
| STO-LP1400 | 1400 ± 10 | T≥90% | 1420-1100 | OD ≥ 3 at 350-1380 nm |
| STO-LP1450 | 1450 ± 10 | T≥90% | 1480-1800 | OD ≥ 3 at 350-1420 nm |
| STO-LP1470 | 1470 ± 10 | T≥90% | 1500-1800 | OD ≥ 3 at 350-1400 nm |
| STO-LP1600 | 1600 ± 10 | T≥90% | 1625-2300 | OD ≥ 3 at 350-1540 nm |
Les passe-bande étroits de l'IR moyen et lointain utilisent silicium, saphir, germanium, fluorure de calcium et séléniure de zinc pour les bandes MWIR et LWIR. Des dimensions sur mesure sont disponibles pour modules détecteurs et systèmes thermiques.
| Modèle | Région IR | CWL (nm) | FWHM (nm) | Transmission maximale | Blocage | Substrat | Dimensions |
|---|---|---|---|---|---|---|---|
| STO-NBP 2750 500nm | MWIR | 2750 ± 50 | 500 ± 60 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2775 250nm | MWIR | 2775 ± 30 | 250 ± 20 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2850 400nm | MWIR | 2850 ± 40 | 400 ± 30 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3080 140nm | MWIR | 3080 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3090 140nm | MWIR | 3090 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3280 160nm | MWIR | 3280 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3310 60nm | MWIR | 3310 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 60nm | MWIR | 3330 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 160nm | MWIR | 3330 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3400 120nm | MWIR | 3400 ± 30 | 120 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3400 180nm | MWIR | 3400 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3420 180nm | MWIR | 3420 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3440 120nm | MWIR | 3440 ± 30 | 120 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 3440 160nm | MWIR | 3440 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3460 150nm | MWIR | 3460 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3800 300nm | MWIR | 3800 ± 40 | 300 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3900 90nm | MWIR | 3900 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3920 90nm | MWIR | 3920 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 3970 90nm | MWIR | 3970 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4000 90nm | MWIR | 4000 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4050 180nm | MWIR | 4050 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4100 180nm | MWIR | 4100 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4200 180nm | MWIR | 4200 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4230 160nm | MWIR | 4230 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 2.9 x 2.9 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 4280 180nm | MWIR | 4280 ± 20 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 130nm | MWIR | 4300 ± 30 | 130 ± 20 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4300 160nm | MWIR | 4300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 180nm | MWIR | 4300 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4320 160nm | MWIR | 4320 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4330 130nm | MWIR | 4330 ± 30 | 130 ± 20 | >=80% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4330 180nm | MWIR | 4330 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4360 180nm | MWIR | 4360 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4380 180nm | MWIR | 4380 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4420 60nm | MWIR | 4420 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4430 60nm | MWIR | 4430 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 60nm | MWIR | 4450 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 200nm | MWIR | 4450 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4480 60nm | MWIR | 4480 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 60nm | MWIR | 4500 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 140nm | MWIR | 4500 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 200nm | MWIR | 4500 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4520 140nm | MWIR | 4520 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4560 160nm | MWIR | 4560 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4600 160nm | MWIR | 4600 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4640 160nm | MWIR | 4640 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4650 160nm | MWIR | 4650 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4680 150nm | MWIR | 4680 ± 30 | 150 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 4690 160nm | MWIR | 4690 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4750 180nm | MWIR | 4750 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4770 150nm | MWIR | 4770 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 5300 600nm | MWIR/LWIR transition | 5300 ± 40 | 600 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7300 300nm | MWIR/LWIR transition | 7300 ± 40 | 300 ± 30 | >=70% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7350 200nm | MWIR/LWIR transition | 7350 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7410 200nm | MWIR/LWIR transition | 7410 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7470 200nm | MWIR/LWIR transition | 7470 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7625 200nm | MWIR/LWIR transition | 7625 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7650 200nm | MWIR/LWIR transition | 7650 ± 30 | 200 ± 30 | >=60% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 8420 200nm | LWIR | 8420 ± 40 | 200 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 9020 180nm | LWIR | 9020 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9080 180nm | LWIR | 9080 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9900 370nm | LWIR | 9900 ± 30 | 370 ± 20 | >=70% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10000 370nm | LWIR | 10000 ± 40 | 370 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10050 370nm | LWIR | 10050 ± 40 | 370 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10270 600nm | LWIR | 10270 ± 40 | 600 ± 30 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10460 370nm | LWIR | 10460 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10500 600nm | LWIR | 10500 ± 50 | 600 ± 40 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10560 370nm | LWIR | 10560 ± 40 | 370 ± 30 | >=75% | 400-18000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10700 370nm | LWIR | 10700 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11500 600nm | LWIR | 11500 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11700 600nm | LWIR | 11700 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 14500 1000nm | LWIR | 14500 ± 50 | 1000 ± 50 | >=70% | 400-19000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
Les passe-bande larges couvrent de larges fenêtres MWIR et LWIR avec blocage hors bande pour imagerie thermique, analyse de gaz et détection IR.
| Modèle | Région IR | Plage de transmission | Transmission moyenne | Blocage | Dimensions | Substrat |
|---|---|---|---|---|---|---|
| STO-WBP 3100-3800nm Filter | MWIR | 3100-3800nm | >=85% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 3250-3500nm Filter | MWIR | 3250-3500nm | >=88% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3550-4150nm Filter | MWIR | 3550-4150nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3670-4970nm Filter | MWIR | 3670-4970nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4500-5000nm Filter | MWIR | 4500-5000nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4750-5400nm Filter | MWIR/LWIR transition | 4750-5400nm | >=80% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 8000-14000nm Filter | LWIR | 8000-14000nm | >75% | 0.4-7.5um, 15-21.5um, < =1% | Custom | Monocrystalline silicon |
| STO-WBP 8000-9450nm Filter | LWIR | 8000-9450nm | >=92% | 400-12000nm, < =1% | Custom | Germanium |
Les passe-haut infrarouges transmettent les grandes longueurs d'onde et bloquent les plus courtes pour isoler le détecteur et les trajets d'imagerie thermique.
| Modèle | Région IR | Plage de transmission | Transmission moyenne | Blocage | Dimensions | Substrat |
|---|---|---|---|---|---|---|
| STOLWP 3000-5000nm Filter | MWIR | 3000-5000nm | >85% | 400-2900nm, < =1% | Custom | Sapphire |
| STOLWP 5500-14000nm | LWIR | 5500-14000nm | >80% | 400-5000nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7000-14000nm Filter | LWIR | 7000-14000nm | >80% | 400-6500nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7700-9000nm Filter | LWIR | 7700-9000nm | >80% | 400-7600nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 8000-12000nm Filter | LWIR | 8000-12000nm | >85% | 400-7500nm, < =1% | Custom | Germanium |
Les traitements antireflet infrarouges réduisent la réflexion de surface et améliorent la transmission des optiques en silicium, saphir et germanium.
| Traitement | Région IR | Plage de transmission | Transmission moyenne | Dimensions | Substrat |
|---|---|---|---|---|---|
| 0.8-5µm AR | MWIR | 0.8-5um | >=86% | Custom | Sapphire |
| 2.9-14.5µm AR | LWIR | 2.9-14.5um | >=73% | Custom | Germanium |
| 3-5µm AR | MWIR | 3-5um | >=90% | Custom | Monocrystalline silicon |
| 7-12µm AR | LWIR | 7-12um | >=88% | Custom | Monocrystalline silicon |
| 8-12µm AR+DLC | LWIR | 8-12um | >=75% | Custom | Monocrystalline silicon |
| 8-14µm AR | LWIR | 8-14um | >=83% | Custom | Monocrystalline silicon |
Les fenêtres IR métallisées combinent une ouverture optique traitée et des bords métallisés pour brasage ou boîtiers hermétiques de détecteurs et systèmes d'imagerie.
| Spécification | Région IR | Ouverture utile | Zone métallisée | Spécification spectrale | Substrat | Dimensions extérieures |
|---|---|---|---|---|---|---|
| 16 x 16 x 0.8mm | MWIR | 13.2 x 13.2 | ≥13.7 x 13.7 | 3-5um, Tavg≥96% | Germanium | 16 x 16 |
| Dia. 12 x 1mm | MWIR | Dia. 10 | ≥Dia. 10.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 12 |
| Dia. 18 x 1mm | MWIR | Dia. 14 | ≥Dia. 14.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 18 |
| Dia. 30 x 1mm | MWIR | Dia. 26 | ≥Dia. 26.5 | 3-5um, Tavg≥96% | Sapphire | Dia. 30 |
| 10 x 10 x 1mm | LWIR | 8.5 x 8.5 x 0.9 | ≥8.9 x 8.9 | 8-12um, Tavg≥82% | Monocrystalline silicon | 10 x 10 x 1 |
| Dia. 2.5 x 0.28mm | SWIR | Dia. 1.6 | ≥Dia. 1.8 | 1250-1650nm, Tavg>99% | Sapphire | Dia. 2.5 |
Modèles passe-bande IR supplémentaires avec FWHM jusqu'à 10 nm. Le résumé affiche les critères optiques ; les dimensions sont à vérifier lors du devis.
| Modèle | Plage spectrale | Classe de largeur de bande | CWL (nm) | FWHM (nm) | Transmission (T) | Résumé du blocage | Substrat | Épaisseur du substrat (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP2475±5 | SWIR | ultra-narrow | 2475 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
| STO-BP2490±5 | SWIR | ultra-narrow | 2490 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
Modèles passe-bande IR supplémentaires avec FWHM supérieure à 10 nm et jusqu'à 20 nm, regroupés pour faciliter le choix de longueur d'onde et de largeur de bande.
| Modèle | Plage spectrale | Classe de largeur de bande | CWL (nm) | FWHM (nm) | Transmission (T) | Résumé du blocage | Substrat | Épaisseur du substrat (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP1440±20 | SWIR | narrow | 1440 ± 5 | 20 ± 10 | T>=70% | 400-2200 nm; T < 1% | White glass | 3 |
| STO-BP1645±5 | SWIR | narrow | 1645 ± 5 | 20 ± 5 | T>=90% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1663±5 | SWIR | narrow | 1663 ± 5 | 20 ± 5 | T>=80% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1697 | SWIR | narrow | 1697 ± 2 | 15 ± 2 | T>=85% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1745±15 | SWIR | narrow | 1740 ± 5 | 20 ± 5 | T=55-65% | 400-2200 nm; T < 1.5% | White glass | 3 |
Modèles passe-bande IR supplémentaires avec FWHM supérieure à 20 nm pour une sélection spectrale plus large.
| Modèle | Plage spectrale | Classe de largeur de bande | CWL (nm) | FWHM (nm) | Transmission (T) | Résumé du blocage | Substrat | Épaisseur du substrat (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP900±30 | NIR | standard | 900 ± 30 | 70 ± 30 | T>=90% | 650-1250 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1380±30 | SWIR | standard | 1380 ± 30 | 70 ± 30 | T>=85% | 500-2000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1600±16 | SWIR | standard | 1600 ± 16 | 150 ± 20 | T>=80% | 400-3000 nm; T < 1% | Corning 7980 | 2 |
| STO-BP1900±20 | SWIR | standard | 1900 ± 20 | 50 ± 15 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP1940±18 | SWIR | standard | 1940 ± 18 | 45 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1, 2 |
| STO-BP2010±20 | SWIR | standard | 2010 ± 20 | 180 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2017±10 | SWIR | standard | 2017 ± 10 | 35 ± 10 | T>=55% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2050±20 | SWIR | standard | 2050 ± 20 | 200 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2120±20 | SWIR | standard | 2120 ± 20 | 50 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2220±20 | SWIR | standard | 2220 ± 20 | 45 ± 10 | T>=75% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2240±20 | SWIR | standard | 2240 ± 20 | 30 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2250±10 | SWIR | standard | 2250 ± 10 | 30 ± 10 | T>=85% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2300±20 | SWIR | standard | 2300 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2310±20 | SWIR | standard | 2310 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2400±24 | SWIR | standard | 2400 ± 24 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2435±10 | SWIR | standard | 2435 ± 10 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2435±20 | SWIR | standard | 2435 ± 20 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2460±20 | SWIR | standard | 2460 ± 20 | 50 ± 10 | T>=80% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2470±30 | SWIR | standard | 2470 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2500±25 | MWIR | standard | 2500 ± 25 | 70 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2520±10 | MWIR | standard | 2520 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2530±30 | MWIR | standard | 2530 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2550±50 | MWIR | standard | 2550 ± 50 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2560±30 | MWIR | standard | 2560 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2570±30 | MWIR | standard | 2570 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2580±30 | MWIR | standard | 2580 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±10 | MWIR | standard | 2600 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±30 | MWIR | standard | 2600 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2610±30 | MWIR | standard | 2610 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2720 | MWIR | standard | 2720 ± 50 | 140 ± 20 | T>=80% | 100-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2730±30 | MWIR | standard | 2730 ± 30 | 210 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 1 |
| STO-BP2750±50 | MWIR | standard | 2750 ± 50 | 140 ± 20 | T>=80% | 200-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2850±28 | MWIR | standard | 2850 ± 28 | 86 ± 20 | T>=80% | 1500-5500 nm; T < 1% | Silicon | 0.5, 6.35 |
| STO-BP2900±20 | MWIR | standard | 2900 ± 20 | 50 ± 10 | T>=70% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP3030±40 | MWIR | standard | 3030 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3050±50 | MWIR | standard | 3050 ± 50 | 100 ± 20 | T>=80% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP3085±30 | MWIR | standard | 3085 ± 30 | 100 ± 20 | T>=80% | 300-30000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3130±40 | MWIR | standard | 3130 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3150±20 | MWIR | standard | 3150 ± 20 | 60 ± 10 | T>=80% | 1500-5500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3250±25 | MWIR | standard | 3250 ± 25 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3250±50 | MWIR | standard | 3250 ± 50 | 180 ± 20 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3275±20 | MWIR | standard | 3275 ± 10 | 30 ± 10 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP3280±30 | MWIR | standard | 3280 ± 30 | 210 ± 15 | T>=75% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3315±10 | MWIR | standard | 3315 ± 10 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3320±50单 | MWIR | standard | 3320 ± 50 | 190 ± 20 | T>=60% | 800-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3330±15 | MWIR | standard | 3330 ± 15 | 160 ± 20 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3360±20 | MWIR | standard | 3360 ± 20 | 70 ± 10 | T>=80% | 1500-6500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3370±35 | MWIR | standard | 3370 ± 35 | 660 ± 70 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25, 0.38 |
| STO-BP3370±50 | MWIR | standard | 3370 ± 50 | 400 ± 30 | T>=80% | 1000-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3375±20 | MWIR | standard | 3375 ± 20 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP3375±40 | MWIR | standard | 3375 ± 40 | 660 ± 70 | T>=85% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3390±35 | MWIR | standard | 3390 ± 35 | 210 ± 10 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3416±20 | MWIR | standard | 3416 ± 20 | 120 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3430±40 | MWIR | standard | 3430 ± 40 | 120 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3440±30 | MWIR | standard | 3440 ± 30 | 120 ± 10 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3580±40 | MWIR | standard | 3580 ± 40 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3615±20 | MWIR | standard | 3615 ± 20 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3630±50 | MWIR | standard | 3630 ± 50 | 145 ± 20 | T>=80% | 400-15000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3660±20 | MWIR | standard | 3660 ± 20 | 40 ± 10 | T>=80% | 800-6000 nm; T < 1% | Silicon | 0.5, 0.916 |
| STO-BP3680±40 | MWIR | standard | 3680 ± 40 | 162 ± 24 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3770±20 | MWIR | standard | 3770 ± 20 | 50 ± 10 | T>=80% | 400-13600 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3940±60 | MWIR | standard | 3940 ± 60 | 90 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3950±39 | MWIR | standard | 3950 ± 39 | 200 ± 20 | T>=85% | 400-8000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3990±50 | MWIR | standard | 3990 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4020±40 | MWIR | standard | 4020 ± 40 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4050±50 | MWIR | standard | 4050 ± 50 | 100 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4060±50 | MWIR | standard | 4060 ± 50 | 100 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4073±40 | MWIR | standard | 4073 ± 40 | 125 ± 50 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4260±50 | MWIR | standard | 4260 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4320±50 | MWIR | standard | 4320 ± 50 | 600 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4380±50 | MWIR | standard | 4380 ± 50 | 150 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4490±70 | MWIR | standard | 4490 ± 70 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4515±20 | MWIR | standard | 4515 ± 20 | 90 ± 20 | T>=75% | 200-30000 nm; T < 1% | Sapphire | 1 |
| STO-BP4530±45 | MWIR | standard | 4530 ± 45 | 350 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-BP4560±40 | MWIR | standard | 4560 ± 40 | 310 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4580±60 | MWIR | standard | 4580 ± 60 | 140 ± 20 | T>=70% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±50 | MWIR | standard | 4680 ± 50 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±55 | MWIR | standard | 4680 ± 55 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±60 | MWIR | standard | 4680 ± 60 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±20 | MWIR | standard | 4710 ± 20 | 140 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±40 | MWIR | standard | 4710 ± 40 | 180 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP4760±50 | MWIR | standard | 4760 ± 50 | 285 ± 70 | T>=80% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4830±40 | MWIR | standard | 4830 ± 40 | 220 ± 20 | T>=75% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP5000±50 | MWIR/LWIR transition | standard | 5000 ± 50 | 150 ± 20 | T>=85% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5010±50 | MWIR/LWIR transition | standard | 5010 ± 50 | 220 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP5070±40 | MWIR/LWIR transition | standard | 5070 ± 50 | 100 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP5120±50 | MWIR/LWIR transition | standard | 5120 ± 50 | 320 ± 20 | T>=70% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-BP5200±50 | MWIR/LWIR transition | standard | 5200 ± 50 | 610 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5250±50 | MWIR/LWIR transition | standard | 5250 ± 50 | 90 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP5380±30 | MWIR/LWIR transition | standard | 5380 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5450±30 | MWIR/LWIR transition | standard | 5450 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5480±30 | MWIR/LWIR transition | standard | 5480 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5600±60 | MWIR/LWIR transition | standard | 5600 ± 60 | 120 ± 20 | T>=80% | 1000-10000 nm | Silicon | 1.5 |
| STO-BP5850±50 | MWIR/LWIR transition | standard | 5850 ± 50 | 200 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5850±60 | MWIR/LWIR transition | standard | 5850 ± 60 | 160 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5950±50 | MWIR/LWIR transition | standard | 5950 ± 50 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6050±50 | MWIR/LWIR transition | standard | 6050 ± 50 | 200 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6150±60 | MWIR/LWIR transition | standard | 6150 ± 60 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6220±30 | MWIR/LWIR transition | standard | 6220 ± 62 | 140 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6235±30 | MWIR/LWIR transition | standard | 6235 ± 30 | 110 ± 20 | T>=60% | 400-11000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-BP6240±40 | MWIR/LWIR transition | standard | 6240 ± 40 | 90 ± 20 | T>=70% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP6250±30 | MWIR/LWIR transition | standard | 6250 ± 30 | 120 ± 20 | T>=70% | 400-15000 nm; T < 1% | Silicon | 1 |
| STO-BP6820±68 | MWIR/LWIR transition | standard | 6820 ± 68 | 100 ± 20 | T>=75% | 400-10600 nm; T < 1% | Silicon | 1 |
| STO-BP6910±20 | MWIR/LWIR transition | standard | 6910 ± 30 | 90 ± 20 | T>=65% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP7400±50 | MWIR/LWIR transition | standard | 7400 ± 50 | 360 ± 20 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5 |
| STO-BP7500±50 | MWIR/LWIR transition | standard | 7500 ± 50 | 2500 ± 100 | T>=90% | 400-17100 nm; T < 1% | Germanium | 0.6 |
| STO-BP7530±30 | MWIR/LWIR transition | standard | 7530 ± 30 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7690±50 | MWIR/LWIR transition | standard | 7690 ± 50 | 340 ± 30 | T>=70% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7700±50 | MWIR/LWIR transition | standard | 7700 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7720±50 | MWIR/LWIR transition | standard | 7720 ± 50 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7760±50 | MWIR/LWIR transition | standard | 7760 ± 50 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7780±20 | MWIR/LWIR transition | standard | 7780 ± 20 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7800±50 | MWIR/LWIR transition | standard | 7800 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7890±80 | MWIR/LWIR transition | standard | 7890 ± 80 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7950±50 | MWIR/LWIR transition | standard | 7950 ± 50 | 450 ± 30 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7950±80 | MWIR/LWIR transition | standard | 7950 ± 80 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8010±20 | LWIR | standard | 8010 ± 20 | 200 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8060±60 | LWIR | standard | 8060 ± 60 | 250 ± 20 | T>80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8120±30 | LWIR | standard | 8120 ± 30 | 250 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8340±30 | LWIR | standard | 8340 ± 30 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8350±100 | LWIR | standard | 8350 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8400±100 | LWIR | standard | 8400 ± 100 | 50 ± 20 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8500±100 | LWIR | standard | 8500 ± 100 | 50 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8550±100 | LWIR | standard | 8550 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8700±100 | LWIR | standard | 8700 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8800±100 | LWIR | standard | 8800 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP10100±100 | LWIR | standard | 10100 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10220±100 | LWIR | standard | 10220 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10580±50 | LWIR | standard | 10580 ± 50 | 250 ± 20 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP10860±150 | LWIR | standard | 10860 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11100±150 | LWIR | standard | 11100 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11200±150 | LWIR | standard | 11200 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11500±50 | LWIR | standard | 11500 ± 50 | 550 ± 50 | T>=65% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11580±60 | LWIR | standard | 11580 ± 60 | 550 ± 50 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP12600±100 | LWIR | standard | 12600 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP12750±100 | LWIR | standard | 12750 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13000±100 | LWIR | standard | 13000 ± 100 | 4000 ± 100 | T>=85% | 1200-20000 nm; T < 1% | Germanium | 0.75, 0.9 |
| STO-BP13250±100 | LWIR | standard | 13250 ± 100 | 850 ± 50 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13650±100 | LWIR | standard | 13650 ± 100 | 850 ± 50 | T>=80% | 400-15000 nm; T < 1% | Germanium | 0.5 |
| STO-BP15000±200 | LWIR | standard | 15000 ± 200 | 2200 ± 50 | T>=65% | 2000-25000 nm; T < 1% | Germanium | 2.2 |
| STO-BP16000±200 | LWIR | standard | 16000 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
| STO-BP16200±200 | LWIR | standard | 16200 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
Autres modèles passe-bande larges pour détection, imagerie et trajets détecteurs MWIR et LWIR.
| Modèle | Plage spectrale | Bande passante (nm) | Plage de transmission (nm) | Transmission (T) | Résumé du blocage | Substrat | Épaisseur du substrat (mm) |
|---|---|---|---|---|---|---|---|
| STO-WBP1000~3000 | SWIR | 970 ± 100 – 2470 ± 100 | 1100-2300 | T>=90% | 200-3560 nm; T < 1% | Glass ceramic | 1 |
| STO-WBP1520~1850 | SWIR | 1520 ± 50 – 1850 ± 50 | 1600-1750 | T>=80% | 400-3300 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP1550~1750 | SWIR | 1550 ± 50 – 1750 ± 50 | 1600-1700 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1550~5050 | MWIR | 1550 ± 50 – 5050 ± 50 | 1600-5000 | T>=80% | 1500-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1650~2350 | SWIR | 1650 ± 50 – 2350 ± 50 | 1700-2250 | T>=80% | 400-4000 nm; T < 10% | Silicon | 0.5 |
| STO-WBP2050~2350 | SWIR | 2050 ± 50 – 2350 ± 50 | 2150-2250 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1, 1.2 |
| STO-WBP2050~2500 | SWIR | 2050 ± 50 – 2500 ± 50 | 2150-2450 | T>=80% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2080~2350 | SWIR | 2080 ± 50 – 2350 ± 50 | 2135-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP2080~2430 | SWIR | 2080 ± 50 – 2430 ± 50 | 2180-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2170~3670 | MWIR | 2170 ± 50 – 3670 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3600 | MWIR | 2200 ± 50 – 3750 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3700 | MWIR | 2250 ± 30 – 3770 ± 30 | 2300-3700 | T>=90% | 1500-5000 nm; T < 1% | Silicon | 1 |
| STO-WBP2400~3150 | MWIR | 2400 ± 50 – 3150 ± 50 | 2500-3000 | T>=90% | 400-10500 nm; T < 1% | Sapphire | 1, 5 |
| STO-WBP2450~3200 | MWIR | 2450 ± 20 – 3200 ± 20 | 2500-3140 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 2.5 |
| STO-WBP2450~4600 | MWIR | 2450 ± 50 – 4600 ± 50 | 2550-4500 | T>=90% | 400-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2450~5150 | MWIR | 2450 ± 50 – 5150 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2490~5240 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2600~5000 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Germanium | 0.5, 0.9, 1 |
| STO-WBP2500-5000 | MWIR | 2500 ± 50 – 5000 ± 50 | 2700-4900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP2500~5100 | MWIR | 2500 ± 50 – 5100 ± 50 | 2650-4950 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2550~3150 | MWIR | 2550 ± 50 – 3150 ± 50 | 2700-3100 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2550~3250 | MWIR | 2550 ± 50 – 3250 ± 50 | 2700-3100 | T>=90% | 430-10030 nm; T < 1% | Silicon | 0.5, 2.5 |
| STO-WBP2600~3300 | MWIR | 2600 ± 50 – 3300 ± 50 | 2850-3000 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP2650~5050 | MWIR | 2600 ± 100 – 5050 ± 50 | 2750-4950 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2650~3000 | MWIR | 2650 ± 40 – 3000 ± 40 | 2700-2950 | T>=85% | 1000-6000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP2700-3550 | MWIR | 2700 ± 50 – 3550 ± 50 | 2800-3450 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2700-3600 | MWIR | 2700 ± 50 – 3600 ± 50 | 2800-3500 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP2700~3150 | MWIR | 2700 ± 50 – 3150 ± 50 | 2800-3050 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2720~2980 | MWIR | 2720 ± 20 – 2980 ± 20 | 2780-2920 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2730~3010 | MWIR | 2730 ± 20 – 3010 ± 20 | 2800-2900 | T>=85% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2750~4850 | MWIR | 2750 ± 50 – 4850 ± 50 | 3000-4600 | T>=85% | 1000-5100 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP2750~5100 | MWIR | 2750 ± 50 – 5100 ± 50 | 2900-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2790~3070 | MWIR | 2790 ± 20 – 3070 ± 20 | 2900-3000 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP2800~3050 | MWIR | 2800 ± 50 – 3050 ± 50 | 2900-3000 | T>=90% | 1500-6500 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5150 | MWIR | 2800 ± 50 – 5150 ± 50 | 2950-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP2800~5200单 | MWIR | 2800 ± 100 – 5200 ± 100 | 2900-5100 | T>=55% | 2580-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5250 | MWIR | 2800 ± 50 – 5250 ± 50 | 2950-5100 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4140 | MWIR | 2900 ± 50 – 4140 ± 50 | 3100-4040 | T>=90% | 700-8040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4450 | MWIR | 2900 ± 50 – 4450 ± 50 | 3050-4350 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP2900~4550 | MWIR | 2900 ± 50 – 4550 ± 50 | 3050-4450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4850 | MWIR | 2900 ± 50 – 4850 ± 50 | 3050-4750 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2900~5100 | MWIR | 2900 ± 50 – 5100 ± 50 | 3000-5000 | T>=90% | 1000-10500 nm; T < 1% | Germanium | 0.3, 0.4, 0.7 |
| STO-WBP2950~3250 | MWIR | 2950 ± 50 – 3250 ± 50 | 3000-3200 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2950~3600 | MWIR | 2950 ± 50 – 3600 ± 50 | 3150-3400 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~3650 | MWIR | 2950 ± 50 – 3650 ± 50 | 3150-3450 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~4950 | MWIR | 2950 ± 50 – 4950 ± 50 | 3100-4800 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3000~3300 | MWIR | 3000 ± 20 – 3300 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP3000~3700 | MWIR | 3000 ± 50 – 3700 ± 50 | 3100-3600 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3000~3800 | MWIR | 3000 ± 100 – 3800 ± 100 | 3100-3700 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3000~3875 | MWIR | 3000 ± 100 – 3875 ± 75 | 3250-3650 | T>=80% | 500-5500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3000~4260 | MWIR | 3000 ± 50 – 4260 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~4300 | MWIR | 3000 ± 50 – 4300 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~5300 | MWIR | 3000 ± 50 – 5300 ± 50 | 3150-5150 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3000~5400 | MWIR | 3000 ± 50 – 5400 ± 50 | 3100-5300 | T>=90% | 1500-2800 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP3020~3320 | MWIR | 3020 ± 20 – 3320 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3040~4320 | MWIR | 3040 ± 50 – 4320 ± 50 | 3250-4050 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~4200 | MWIR | 3050 ± 50 – 4200 ± 50 | 3250-3900 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5000 | MWIR | 3050 ± 50 – 5000 ± 50 | 3200-4850 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5450 | MWIR | 3050 ± 50 – 5450 ± 50 | 3200-5300 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3100~3700 | MWIR | 3100 ± 150 – 3700 ± 150 | 3200-3600 | T>=90% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3100~4100 | MWIR | 3100 ± 50 – 4100 ± 50 | 3300-3900 | T>=90% | 900-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3100~4150 | MWIR | 3100 ± 50 – 4150 ± 50 | 3250-4050 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3100~4200 | MWIR | 3100 ± 50 – 4200 ± 50 | 3250-4050 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3100~4250 | MWIR | 3100 ± 50 – 4250 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3130~3400 | MWIR | 3130 ± 50 – 3400 ± 50 | 3250-3350 | T>=75% | 500-3700 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3150~3560 | MWIR | 3150 ± 50 – 3560 ± 50 | 3300-3500 | T>=85% | 400-10000 nm; T < 1% | Sapphire | 0.3 |
| STO-WBP3150~3600 | MWIR | 3150 ± 50 – 3600 ± 50 | 3250-3520 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~3650 | MWIR | 3150 ± 50 – 3650 ± 50 | 3250-3500 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~4100 | MWIR | 3150 ± 50 – 4100 ± 50 | 3250-4000 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3150~4200 | MWIR | 3150 ± 50 – 4200 ± 50 | 3300-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~5150 | MWIR | 3150 ± 50 – 5150 ± 50 | 3300-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3180-3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3380 | T>=85% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3180~3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3400 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~3500 | MWIR | 3200 ± 50 – 3500 ± 50 | 3250-3450 | T>=85% | 500-3700 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3200~3550 | MWIR | 3200 ± 50 – 3550 ± 50 | 3280-3480 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.7, 0.9 |
| STO-WBP3200~4000 | MWIR | 3200 ± 50 – 4000 ± 50 | 3350-3850 | T>=90% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP3200~4100 | MWIR | 3200 ± 50 – 4100 ± 50 | 3300-4000 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~5200 | MWIR | 3200 ± 100 – 5200 ± 100 | 3300-5050 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.3 |
| STO-WBP3170~3430 | MWIR | 3220 ± 20 – 3480 ± 20 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3, 0.9, 1 |
| STO-WBP3230~3500 | MWIR | 3230 ± 50 – 3500 ± 50 | 3250-3480 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3230~3520 | MWIR | 3230 ± 30 – 3520 ± 30 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3250~4200 | MWIR | 3250 ± 50 – 4200 ± 50 | 3400-4100 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP3270~3470 | MWIR | 3270 ± 50 – 3470 ± 50 | 3320-3420 | T>=80% | 200-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3300~4250 | MWIR | 3300 ± 50 – 4250 ± 50 | 3450-4150 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3300~4900 | MWIR | 3300 ± 50 – 4900 ± 50 | 3400-4800 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3400~3600 | MWIR | 3325 ± 25 – 3675 ± 25 | 3450-3550 | T>=90% | 900-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3350~4250 | MWIR | 3350 ± 50 – 4250 ± 50 | 3550-4150 | T>=90% | 430-10030 nm; T < 1% | Silicon | 2.5 |
| STO-WBP3350~4500 | MWIR | 3350 ± 50 – 4500 ± 50 | 3500-4350 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3350~4750 | MWIR | 3350 ± 50 – 4750 ± 50 | 3450-4650 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4000 | MWIR | 3400 ± 50 – 4000 ± 50 | 3500-3850 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3400~4100 | MWIR | 3400 ± 100 – 4100 ± 100 | 3550-4000 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3400~4200 | MWIR | 3400 ± 100 – 4200 ± 100 | 3550-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5, 1 |
| STO-WBP3400~4300 | MWIR | 3400 ± 50 – 4300 ± 50 | 3500-4200 | T>=80% | 1500-7000 nm; T < 1% | Sapphire | 2.5 |
| STO-WBP3400~4800 | MWIR | 3400 ± 50 – 4800 ± 50 | 3500-4700 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4850 | MWIR | 3400 ± 50 – 4850 ± 50 | 3400-4500 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4950 | MWIR | 3400 ± 50 – 4950 ± 50 | 3700-4700 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5000 | MWIR | 3400 ± 50 – 5000 ± 50 | 3500-4900 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5100 | MWIR | 3400 ± 50 – 5100 ± 50 | 3600-5000 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3420~3910 | MWIR | 3420 ± 50 – 3910 ± 50 | 3500-3830 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3425~4850 | MWIR | 3425 ± 75 – 4850 ± 50 | 3650-4750 | T>=85% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3440~4890 | MWIR | 3440 ± 50 – 4890 ± 50 | 3500-4830 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3450~4000 | MWIR | 3450 ± 50 – 4000 ± 50 | 3500-3900 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3450~4050 | MWIR | 3450 ± 50 – 4050 ± 50 | 3600-3900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3470~4950 | MWIR | 3470 ± 50 – 4950 ± 50 | 3570-4850 | T>=90% | 500-10070 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3480~4880 | MWIR | 3480 ± 50 – 4880 ± 50 | 3700-4800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3490~3850 | MWIR | 3490 ± 50 – 3850 ± 50 | 3550-3750 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~3950 | MWIR | 3490 ± 50 – 3950 ± 50 | 3650-3800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~4050 | MWIR | 3490 ± 50 – 4050 ± 50 | 3650-3950 | T>=80% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-WBP3500~4150 | MWIR | 3500 ± 50 – 4150 ± 50 | 3600-4050 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~4900 | MWIR | 3500 ± 50 – 4900 ± 50 | 3600-4800 | T>=70% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3500~4950 | MWIR | 3500 ± 50 – 4950 ± 50 | 3560-4900 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5300 | MWIR | 3500 ± 50 – 5300 ± 50 | 3600-5100 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5600 | MWIR | 3500 ± 50 – 5600 ± 50 | 3600-5500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3525~4925 | MWIR | 3525 ± 100 – 4950 ± 100 | 3700-4800 | T>=90% | 1500-9000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3530~3950 | MWIR | 3530 ± 50 – 3950 ± 50 | 3610-3870 | T>=75% | 400-5580 nm; T < 1% | Silicon | 0.5, 1.2 |
| STO-WBP3500~3970 | MWIR | 3545 ± 20 – 4015 ± 20 | 3610-3955 | T>=80% | 450-5600 nm; T < 1% | Zinc selenide | 2 |
| STO-WBP3550~4100 | MWIR | 3550 ± 50 – 4100 ± 50 | 3650-4000 | T>=93% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4250 | MWIR | 3550 ± 50 – 4250 ± 50 | 3600-4200 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3550~4750 | MWIR | 3550 ± 50 – 4750 ± 50 | 3650-4650 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4950 | MWIR | 3550 ± 50 – 4950 ± 50 | 3700-4800 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4990 | MWIR | 3550 ± 50 – 4990 ± 50 | 3600-4800 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~5000 | MWIR | 3550 ± 50 – 5000 ± -100 | 3700-4600 | T>=90% | 1500-10500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3600-4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3620-3890 | T>=75% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3600~4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3680-3900 | T>=75% | 400-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP3600~4300 | MWIR | 3600 ± 50 – 4300 ± 50 | 3700-4200 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3600~4850 | MWIR | 3600 ± 50 – 4850 ± 50 | 3700-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3600~5000 | MWIR | 3600 ± 50 – 5000 ± 50 | 3700-4700 | T>=90% | 400-9000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3600~5100 | MWIR | 3600 ± 100 – 5100 ± 100 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3600~5300 | MWIR | 3600 ± 50 – 5300 ± 50 | 3700-5200 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3600~5450 | MWIR | 3600 ± 50 – 5450 ± 50 | 3800-5250 | T>=80% | 400-6000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3600~5550 | MWIR | 3600 ± 50 – 5550 ± 50 | 3700-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3605~5275 | MWIR | 3605 ± 25 – 5275 ± 25 | 3730-5150 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3650~4265 | MWIR | 3650 ± 50 – 4265 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5050 | MWIR | 3650 ± 50 – 5050 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5100 | MWIR | 3650 ± 50 – 5100 ± 50 | 3740-5000 | T>=93% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5150 | MWIR | 3650 ± 70 – 5150 ± 70 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3650~5350 | MWIR | 3650 ± 50 – 5350 ± 50 | 3800-5200 | T>=90% | 400-11000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5550 | MWIR | 3650 ± 50 – 5550 ± 50 | 3750-5300 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3650~5600 | MWIR | 3650 ± 50 – 5600 ± 50 | 3750-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5750 | MWIR | 3650 ± 50 – 5750 ± 50 | 3750-5450 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4500 | MWIR | 3650 ± 50 – 4600 ± 50 | 3700-4500 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3660~4250 | MWIR | 3660 ± 50 – 4250 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP3800~4850 | MWIR | 3675 ± 25 – 4975 ± 25 | 3800-4850 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3680~5160 | MWIR | 3700 ± 100 – 5200 ± 100 | 3800-4700 | T>=90% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~4550 | MWIR | 3700 ± 50 – 4550 ± 50 | 3800-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3700~4700 | MWIR | 3700 ± 50 – 4700 ± 50 | 3800-4600 | T>=85% | 500-8000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4990 | MWIR | 3700 ± 50 – 4990 ± 40 | 3800-4750 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.38, 0.7 |
| STO-WBP3700~5020 | MWIR | 3700 ± 50 – 5020 ± 50 | 3800-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5150 | MWIR | 3700 ± 50 – 5150 ± 50 | 3750-4900 | T>=92% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5200 | MWIR | 3700 ± 60 – 5200 ± 60 | 3850-5050 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~5600 | MWIR | 3700 ± 50 – 5600 ± 50 | 3850-5450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5750 | MWIR | 3700 ± 50 – 5750 ± 50 | 3850-5500 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5800 | MWIR | 3700 ± 50 – 5800 ± 50 | 3850-5600 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 1 |
| STO-WBP3710~5030 | MWIR | 3710 ± 30 – 5030 ± 30 | 3800-4900 | T>=90% | 1800-7000 nm; T < 1% | Silicon | 1 |
| STO-WBP3730~4850 | MWIR | 3730 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3730~4900 | MWIR | 3730 ± 50 – 4900 ± 50 | 3850-4750 | T>=90% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.4 |
| STO-WBP3730~4960 | MWIR | 3730 ± 50 – 4960 ± 50 | 3850-4600 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3740~4840 | MWIR | 3740 ± 50 – 4840 ± 50 | 3740-4840 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3740~4860 | MWIR | 3740 ± 40 – 4860 ± 40 | 3850-4700 | T>=85% | 1000-10000 nm; T < 1% | Germanium | 0.3, 0.38, 0.4 |
| STO-WBP3740~4950 | MWIR | 3740 ± 50 – 4950 ± 50 | 3900-4800 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3750~4500 | MWIR | 3750 ± 50 – 4500 ± 50 | 3850-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~4850 | MWIR | 3750 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3750~4900 | MWIR | 3750 ± 50 – 4900 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3750~5020 | MWIR | 3750 ± 50 – 5020 ± 50 | 3850-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3750~5050 | MWIR | 3750 ± 50 – 5050 ± 50 | 3900-4900 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3750~5650 | MWIR | 3750 ± 50 – 5650 ± 50 | 4000-5300 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3750~5700 | MWIR | 3750 ± 50 – 5700 ± 50 | 4000-5500 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~5800 | MWIR | 3750 ± 50 – 5800 ± 50 | 3800-5600 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3800~4100 | MWIR | 3800 ± 50 – 4100 ± 50 | 3850-4050 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP3800~4700 | MWIR | 3800 ± 50 – 4700 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3800~5500 | MWIR | 3800 ± 100 – 5500 ± 100 | 3900-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5150 | MWIR | 3900 ± 100 – 5150 ± 50 | 4400-4800 | T>=85% | 500-6500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5600 | MWIR | 3900 ± 100 – 5600 ± 100 | 4000-5500 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5650 | MWIR | 3900 ± 100 – 5650 ± 100 | 4100-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP4000~4650 | MWIR | 4000 ± 50 – 4650 ± 50 | 4120-4480 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4000~5000 | MWIR | 4000 ± 200 – 5000 ± 200 | 4200-4900 | T>=85% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP4000~5200 | MWIR | 4000 ± 50 – 5200 ± 50 | 4100-5000 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP4100~4650 | MWIR | 4100 ± 50 – 4650 ± 50 | 4200-4550 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP4120~4360 | MWIR | 4120 ± 60 – 4360 ± 60 | 4220-4320 | T>=85% | 300-6500 nm; T < 1% | Silicon | 1 |
| STO-WBP4140~4370 | MWIR | 4140 ± 30 – 4370 ± 30 | 4200-4300 | T>=75% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4140~4440 | MWIR | 4140 ± 30 – 4440 ± 30 | 4200-4400 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4150~4650 | MWIR | 4150 ± 50 – 4650 ± 50 | 4250-4550 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4200~4450 | MWIR | 4200 ± 20 – 4450 ± 20 | 4250-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4200~4750 | MWIR | 4200 ± 50 – 4750 ± 50 | 4250-4650 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4200~5000 | MWIR | 4200 ± 50 – 5000 ± 50 | 4350-4800 | T>=85% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP4212~4457 | MWIR | 4212 ± 40 – 4457 ± 40 | 4260-4400 | T>=80% | 300-6500 nm; T < 1% | Silicon | 0.95 |
| STO-WBP4230~4520 | MWIR | 4230 ± 20 – 4520 ± 20 | 4350-4450 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP4250~4800 | MWIR | 4250 ± 50 – 4800 ± 50 | 4350-4700 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4250~5300 | MWIR | 4250 ± 50 – 5300 ± 50 | 4400-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4290~4580 | MWIR | 4290 ± 20 – 4580 ± 20 | 4400-4500 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP4300~4500 | MWIR | 4300 ± 30 – 4500 ± 30 | 4350-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4400~4700 | MWIR | 4400 ± 50 – 4700 ± 50 | 4570-4600 | T>=80% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4420~4720 | MWIR | 4420 ± 50 – 4720 ± 50 | 4470-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~4750 | MWIR | 4450 ± 70 – 4750 ± 70 | 4570-4620 | T>=70% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4450~4950 | MWIR | 4450 ± 50 – 4950 ± 50 | 4550-4900 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~5150 | MWIR | 4450 ± 50 – 5150 ± 50 | 4550-5050 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4500~4800 | MWIR | 4500 ± 50 – 4800 ± 50 | 4640-4740 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP4500~4900 | MWIR | 4500 ± 50 – 4900 ± 50 | 4600-4800 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.8 |
| STO-WBP4520~4720 | MWIR | 4520 ± 50 – 4720 ± 50 | 4570-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP4520~4820 | MWIR | 4520 ± 50 – 4820 ± 50 | 4570-4770 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4550~5200 | MWIR | 4550 ± 50 – 5300 ± 50 | 4600-5150 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4600~4900 | MWIR | 4600 ± 50 – 4900 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4950 | MWIR | 4650 ± 50 – 4950 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4980 | MWIR | 4650 ± 50 – 4980 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP4650~5300 | MWIR | 4650 ± 50 – 5300 ± 50 | 4800-5200 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4750~5150 | MWIR | 4750 ± 50 – 5150 ± 50 | 4800-5000 | T>=80% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4800~5000 | MWIR | 4800 ± 50 – 5000 ± 50 | 4850-4950 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1.2 |
| STO-WBP4800~5100 | MWIR | 4800 ± 50 – 5100 ± 50 | 4850-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4800~5200 | MWIR/LWIR transition | 4800 ± 50 – 5200 ± 50 | 4860-5140 | T>=90% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4900~5100 | MWIR/LWIR transition | 4900 ± 50 – 5100 ± 50 | 4950-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4920~5800 | MWIR/LWIR transition | 4920 ± 50 – 5800 ± 50 | 5100-5600 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4950~9250 | MWIR/LWIR transition | 4950 ± 50 – 9250 ± 50 | 5100-9100 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP5000~5800 | MWIR/LWIR transition | 5000 ± 50 – 5800 ± 50 | 5100-5600 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5010~5880 | MWIR/LWIR transition | 5010 ± 50 – 5880 ± 50 | 5110-5780 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5030~9280 | MWIR/LWIR transition | 5030 ± 50 – 9280 ± 50 | 5180-9130 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5050~9160 | MWIR/LWIR transition | 5050 ± 50 – 9160 ± 50 | 5300-8750 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5090~9450 | MWIR/LWIR transition | 5090 ± 90 – 9450 ± 90 | 5240-9300 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5100~5850 | MWIR/LWIR transition | 5100 ± 50 – 5850 ± 50 | 5300-5700 | T>=75% | 400-10000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP5100~9350 | MWIR/LWIR transition | 5100 ± 50 – 9350 ± 50 | 6100-9200 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~6000 | MWIR/LWIR transition | 5150 ± 50 – 6000 ± 50 | 5050-5900 | T>=80% | 500-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~9450 | MWIR/LWIR transition | 5150 ± 50 – 9450 ± 50 | 5400-9100 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5240~9440 | MWIR/LWIR transition | 5240 ± 70 – 9440 ± 70 | 6000-9000 | T>=80% | 580-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP5400~7400 | MWIR/LWIR transition | 5400 ± 50 – 7400 ± 50 | 5500-7300 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5450~7600 | MWIR/LWIR transition | 5450 ± 50 – 7600 ± 50 | 5600-7400 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5510~6700 | MWIR/LWIR transition | 5510 ± 60 – 6700 ± 60 | 5700-6500 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP5550~7550 | MWIR/LWIR transition | 5550 ± 50 – 7550 ± 50 | 5750-7250 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7600 | MWIR/LWIR transition | 5550 ± 50 – 7600 ± 50 | 5750-7300 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7650 | MWIR/LWIR transition | 5550 ± 50 – 7650 ± 50 | 5700-7450 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5550~7700 | MWIR/LWIR transition | 5550 ± 50 – 7700 ± 50 | 5700-7500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5600~6800 | MWIR/LWIR transition | 5600 ± 30 – 6800 ± 30 | 5700-6680 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6000~12100 | LWIR | 6000 ± 200 – 12100 ± 200 | 6200-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP6200~10200 | LWIR | 6200 ± 100 – 10200 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6220~7530 | MWIR/LWIR transition | 6220 ± 50 – 7530 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~7600 | MWIR/LWIR transition | 6300 ± 50 – 7600 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~9900 | LWIR | 6300 ± 100 – 9900 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6400~10100 | LWIR | 6400 ± 100 – 10100 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP6420~10100 | LWIR | 6420 ± 50 – 10100 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP6450~10750 | LWIR | 6450 ± 100 – 10750 ± 100 | 6600-10600 | T>=90% | 1500-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP6450~7750 | MWIR/LWIR transition | 6450 ± 50 – 7750 ± 50 | 6650-7550 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6550~8250 | MWIR/LWIR transition | 6550 ± 100 – 8250 ± 100 | 6700-8100 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6600~8300 | MWIR/LWIR transition | 6600 ± 100 – 8300 ± 100 | 6750-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6650~8750 | MWIR/LWIR transition | 6650 ± 50 – 8750 ± 50 | 6800-8500 | T>=75% | 1500-11000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP6650~9760 | LWIR | 6650 ± 50 – 9760 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6800~8100 | MWIR/LWIR transition | 6800 ± 80 – 8100 ± 80 | 7100-7800 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP6800~8300 | MWIR/LWIR transition | 6800 ± 100 – 8300 ± 100 | 6950-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7100~8400 | MWIR/LWIR transition | 7100 ± 80 – 8400 ± 80 | 7400-8100 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP7200~8500 | MWIR/LWIR transition | 7200 ± 80 – 8500 ± 80 | 7500-8200 | T>=90% | 200-12000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7200~9400 | LWIR | 7200 ± 50 – 9400 ± 50 | 7300-9100 | T>=90% | 6400-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7250~7850 | MWIR/LWIR transition | 7250 ± 100 – 7850 ± 100 | 7350-7750 | T>=80% | 3300-20000 nm; T < 1% | Germanium | 1, 2 |
| STO-WBP7350~8080 | MWIR/LWIR transition | 7350 ± 50 – 8080 ± 50 | 7510-7980 | T>=90% | 400-12000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP7400~8400 | MWIR/LWIR transition | 7400 ± 50 – 8400 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8430 | MWIR/LWIR transition | 7400 ± 70 – 8430 ± 70 | 7600-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8500 | MWIR/LWIR transition | 7400 ± 50 – 8500 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~9500 | LWIR | 7400 ± 50 – 9500 ± 50 | 7500-9400 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7450~10200 | LWIR | 7450 ± 50 – 10200 ± 50 | 7600-10000 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7450~13600 | LWIR | 7450 ± 50 – 13600 ± 100 | 7700-13300 | T>=75% | 2000-19000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7450~8500 | MWIR/LWIR transition | 7450 ± 50 – 8500 ± 50 | 7600-8100 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7450~9650 | LWIR | 7450 ± 50 – 9650 ± 50 | 7700-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7400~9900 | LWIR | 7460 ± 50 – 9960 ± 50 | 7660-9760 | T>=90% | 460-16060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7460~9630 | LWIR | 7460 ± 50 – 9630 ± 50 | 7550-9600 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 1 |
| STO-WBP7480~9380 | LWIR | 7480 ± 70 – 9380 ± 70 | 7700-9100 | T>=80% | 500-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP7500~7900 | MWIR/LWIR transition | 7500 ± 70 – 7900 ± 70 | 7600-7800 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~8400 | MWIR/LWIR transition | 7500 ± 50 – 8400 ± 50 | 7700-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8500 | LWIR | 7500 ± 50 – 8500 ± 50 | 7700-8200 | T>=85% | 200-16000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7500~8550 | LWIR | 7500 ± 50 – 8550 ± 50 | 7700-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8600 | LWIR | 7500 ± 50 – 8600 ± 50 | 7700-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~9300 | LWIR | 7500 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~9400 | LWIR | 7500 ± 50 – 9400 ± 50 | 8000-9000 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7550~13700 | LWIR | 7550 ± 50 – 13700 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7550~13950 | LWIR | 7550 ± 100 – 13950 ± 100 | 7750-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7550~8600 | LWIR | 7550 ± 70 – 8600 ± 70 | 7800-8300 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7550~9800 | LWIR | 7550 ± 50 – 9800 ± 50 | 7700-9550 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7575~7975 | MWIR/LWIR transition | 7575 ± 50 – 7975 ± 50 | 7675-7875 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10100 | LWIR | 7600 ± 70 – 10100 ± 100 | 7770-9900 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10160 | LWIR | 7600 ± 100 – 10160 ± 100 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8100 | MWIR/LWIR transition | 7600 ± 100 – 8100 ± 100 | 7700-8000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8600 | LWIR | 7600 ± 50 – 8600 ± 50 | 7800-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7600~9300 | LWIR | 7600 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9500 | LWIR | 7600 ± 50 – 9500 ± 50 | 8000-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9600 | LWIR | 7600 ± 50 – 9600 ± 50 | 7800-9300 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9700 | LWIR | 7600 ± 50 – 9700 ± 50 | 8000-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9730 | LWIR | 7600 ± 50 – 9730 ± 50 | 7800-9500 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9950 | LWIR | 7600 ± 50 – 9950 ± 50 | 7900-9600 | T>=85% | 6400-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7630~8070 | MWIR/LWIR transition | 7630 ± 70 – 8070 ± 70 | 7730-7970 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7650~10400 | LWIR | 7650 ± 50 – 10400 ± 50 | 7800-10250 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.38 |
| STO-WBP7650~13900 | LWIR | 7650 ± 50 – 13900 ± 100 | 7800-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7650~14100 | LWIR | 7650 ± 50 – 14100 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.4, 0.7, 1 |
| STO-WBP7650~8690 | LWIR | 7650 ± 70 – 8690 ± 70 | 7900-8400 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7650~9870 | LWIR | 7650 ± 50 – 9870 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~13500 | LWIR | 7700 ± 200 – 13500 ± 500 | 7900-13000 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7700~14250 | LWIR | 7700 ± 100 – 14250 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm | Germanium | 0.4, 1 |
| STO-WBP7700~8200 | MWIR/LWIR transition | 7700 ± 100 – 8200 ± 100 | 7810-8110 | T>=80% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7700~9400 | LWIR | 7700 ± 50 – 9400 ± 50 | 7850-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9600 | LWIR | 7700 ± 100 – 9600 ± 100 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9650 | LWIR | 7700 ± 50 – 9650 ± 50 | 8000-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9850 | LWIR | 7700 ± 100 – 9850 ± 100 | 7870-9570 | T>=85% | 1500-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP7700~9900 | LWIR | 7700 ± 50 – 9900 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9980 | LWIR | 7700 ± 50 – 9980 ± 50 | 8000-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7730~10250 | LWIR | 7730 ± 70 – 10250 ± 100 | 7900-10050 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7730~9950 | LWIR | 7730 ± 50 – 9950 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10000 | LWIR | 7750 ± 50 – 10000 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10050 | LWIR | 7750 ± 50 – 10050 ± 50 | 7700-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10100 | LWIR | 7750 ± 50 – 10100 ± 100 | 7700-10000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7750~10250 | LWIR | 7750 ± 50 – 10250 ± 50 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10300 | LWIR | 7750 ± 50 – 10300 ± 50 | 7900-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10500 | LWIR | 7750 ± 100 – 10500 ± 100 | 7950-10300 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9700 | LWIR | 7750 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9980 | LWIR | 7750 ± 50 – 9980 ± 50 | 8000-9700 | T>=80% | 1500-12000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7770~10580 | LWIR | 7770 ± 50 – 10580 ± 50 | 7950-10400 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9280 | LWIR | 7780 ± 100 – 9280 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9480 | LWIR | 7780 ± 100 – 9480 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10050 | LWIR | 7800 ± 50 – 10050 ± 50 | 8100-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10100 | LWIR | 7800 ± 50 – 10100 ± 50 | 7900-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10350 | LWIR | 7800 ± 70 – 10350 ± 100 | 7970-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10600 | LWIR | 7800 ± 100 – 10600 ± 100 | 8000-10400 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7800~12100 | LWIR | 7800 ± 100 – 12100 ± 100 | 8100-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7800~12200 | LWIR | 7800 ± 75 – 12200 ± 75 | 8100-11950 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP7800~14200 | LWIR | 7800 ± 100 – 14200 ± 100 | 8300-13500 | T>=85% | 1500-19000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP7800~9650 | LWIR | 7800 ± 50 – 9650 ± 50 | 8200-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7800~9700 | LWIR | 7800 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850-13650 | LWIR | 7850 ± 50 – 13650 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP7850~10450 | LWIR | 7850 ± 50 – 10450 ± 50 | 8000-10100 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10600 | LWIR | 7850 ± 50 – 10600 ± 50 | 8000-10350 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10650 | LWIR | 7850 ± 100 – 10650 ± 100 | 8050-10450 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~13750 | LWIR | 7850 ± 50 – 13750 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 0.5 |
| STO-WBP7850~13900 | LWIR | 7850 ± 100 – 13900 ± 400 | 8200-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7850~9650 | LWIR | 7850 ± 50 – 9650 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9700 | LWIR | 7850 ± 50 – 9700 ± 50 | 8300-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9750 | LWIR | 7850 ± 50 – 9750 ± 50 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9850 | LWIR | 7850 ± 50 – 9850 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10200 | LWIR | 7880 ± 100 – 10300 ± 100 | 8080-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7880~10400 | LWIR | 7880 ± 100 – 10400 ± 100 | 8100-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~12000 | LWIR | 7900 ± 100 – 12000 ± 100 | 8100-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP7900~12200 | LWIR | 7900 ± 100 – 12200 ± 100 | 8150-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~9800 | LWIR | 7900 ± 50 – 9800 ± 50 | 8300-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10350 | LWIR | 7920 ± 70 – 10350 ± 100 | 8090-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10500 | LWIR | 7920 ± 70 – 10500 ± 100 | 8090-10300 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10050 | LWIR | 7950 ± 50 – 10050 ± 50 | 8300-9700 | T>=92% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10400 | LWIR | 7950 ± 50 – 10400 ± 50 | 8500-10100 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7950~13850 | LWIR | 7950 ± 50 – 13850 ± 50 | 8300-13300 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 0.4 |
| STO-WBP7950~9850 | LWIR | 7950 ± 50 – 9850 ± 50 | 8200-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7980~9680 | LWIR | 7980 ± 100 – 9680 ± 100 | 8030-9530 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8000~10100 | LWIR | 8000 ± 100 – 10100 ± 100 | 8200-9900 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~10700 | LWIR | 8000 ± 200 – 10700 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8000~11300 | LWIR | 8000 ± 50 – 11300 ± 50 | 8300-11200 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~11400 | LWIR | 8000 ± 50 – 11400 ± 50 | 8300-11000 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~12000 | LWIR | 8000 ± 100 – 12000 ± 100 | 8200-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8000~12200 | LWIR | 8000 ± 100 – 12200 ± 100 | 8300-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP8000~12400 | LWIR | 8000 ± 100 – 12400 ± 100 | 8300-12000 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~13900 | LWIR | 8000 ± 50 – 13900 ± 50 | 8300-13600 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8050~13850 | LWIR | 8050 ± 50 – 13850 ± 50 | 8500-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8080~9880 | LWIR | 8080 ± 100 – 9880 ± 100 | 8500-9500 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8100~11700 | LWIR | 8100 ± 100 – 11700 ± 100 | 8400-11400 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~12800 | LWIR | 8100 ± 100 – 12800 ± 100 | 8300-12600 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~9000 | LWIR | 8100 ± 100 – 9000 ± 100 | 8250-8850 | T>=85% | 490-10090 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP8200-10100 | LWIR | 8200 ± 400 – 10100 ± 420 | 8800-9500 | T>=88% | 2000-12000 nm; T < 1% | Germanium | 0.5, 0.6 |
| STO-WBP8200-12000 | LWIR | 8200 ± 100 – 12000 ± 100 | 8400-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8200~10900 | LWIR | 8200 ± 200 – 10900 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8230~12400 | LWIR | 8230 ± 150 – 12400 ± 200 | 8800-11000 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8200~9000 | LWIR | 8240 ± 50 – 9140 ± 50 | 8340-9040 | T>=90% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300-8900 | LWIR | 8300 ± 100 – 8900 ± 100 | 8400-8700 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8300~13000 | LWIR | 8300 ± 160 – 13000 ± 160 | 8800-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8300~9200 | LWIR | 8300 ± 100 – 9200 ± 100 | 8430-9090 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300~9300 | LWIR | 8300 ± 100 – 9300 ± 100 | 8500-9100 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8400~13000 | LWIR | 8400 ± 150 – 13000 ± 150 | 8900-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8400~14700 | LWIR | 8400 ± 200 – 14700 ± 300 | 9000-13000 | T>=75% | 400-20000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8500-12250 | LWIR | 8500 ± 100 – 12250 ± 100 | 8700-12100 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8500-9050 | LWIR | 8500 ± 100 – 9050 ± 100 | 8650-8900 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8550-12350 | LWIR | 8550 ± 50 – 12350 ± 50 | 8700-12200 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.5 |
| STO-WBP8600-12500 | LWIR | 8600 ± 150 – 12500 ± 150 | 8980-12000 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP8700-9400 | LWIR | 8700 ± 100 – 9400 ± 100 | 8900-9300 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8770-9550 | LWIR | 8770 ± 50 – 9550 ± 50 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8800-9700 | LWIR | 8850 ± 50 – 9650 ± 50 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9500 | LWIR | 8900 ± 100 – 9500 ± 100 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9600 | LWIR | 8900 ± 100 – 9600 ± 100 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9700 | LWIR | 8900 ± 100 – 9700 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9800 | LWIR | 8900 ± 100 – 9800 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9000-9850 | LWIR | 9000 ± 100 – 9850 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9600-14800 | LWIR | 9600 ± 100 – 14800 ± 100 | 9900-14400 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP9800-15100 | LWIR | 9800 ± 100 – 15100 ± 100 | 11000-14700 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP10100-11100 | LWIR | 10100 ± 100 – 11100 ± 100 | 10350-10850 | T>=90% | 7600-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10160-11180 | LWIR | 10160 ± 50 – 11180 ± 50 | 10310-11030 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10200-11600 | LWIR | 10200 ± 100 – 11600 ± 100 | 10600-11300 | T>=85% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10240-10840 | LWIR | 10240 ± 50 – 10840 ± 50 | 10340-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10240-11260 | LWIR | 10240 ± 50 – 11260 ± 50 | 10400-11100 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10290-11490 | LWIR | 10290 ± 100 – 11490 ± 100 | 10490-11290 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10300-11400 | LWIR | 10300 ± 100 – 11400 ± 100 | 10500-11100 | T>=80% | 7000-14000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP10300-11500 | LWIR | 10300 ± 120 – 11500 ± 120 | 10800-11300 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10250-10850 | LWIR | 10340 ± 50 – 10940 ± 50 | 10440-10840 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-10840 | LWIR | 10340 ± 50 – 10840 ± 50 | 10440-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-11040 | LWIR | 10340 ± 50 – 11040 ± 50 | 10440-10940 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10360-10860 | LWIR | 10360 ± 50 – 10860 ± 50 | 10460-10760 | T>=90% | 1060-14060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10400-11300 | LWIR | 10400 ± 100 – 11300 ± 100 | 10700-11100 | T>=90% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10440-11040 | LWIR | 10440 ± 50 – 11040 ± 50 | 10600-10900 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10540-11140 | LWIR | 10540 ± 50 – 11140 ± 50 | 10700-11000 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10600-11450 | LWIR | 10600 ± 100 – 11450 ± 100 | 10700-11350 | T>=85% | 7500-14000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP10600-11800 | LWIR | 10600 ± 100 – 11800 ± 100 | 10980-11750 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11300-15600 | LWIR | 11300 ± 100 – 15600 ± 100 | 11500-15000 | T>=70% | 10080-16080 nm; T < 1% | Wedge germanium | 2 |
| STO-WBP11400-12380 | LWIR | 11400 ± 60 – 12380 ± 60 | 11550-12230 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11400-12600 | LWIR | 11490 ± 100 – 12690 ± 100 | 12000-12490 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11500-12500 | LWIR | 11500 ± 50 – 12500 ± 50 | 11650-12350 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11570-12570 | LWIR | 11570 ± 50 – 12570 ± 50 | 11770-12370 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
Modèles passe-haut supplémentaires transmettant l'infrarouge de plus grande longueur d'onde et bloquant les longueurs d'onde plus courtes.
| Modèle | Plage spectrale | Seuil de transmission (cut-on) (nm) | Transmission (T) | Plage de transmission (nm) | Résumé du blocage | Substrat | Épaisseur du substrat (mm) |
|---|---|---|---|---|---|---|---|
| STO-LP1500 | SWIR | 1500 ± 100 | T>=85% | 1600-5300 | 400-1400 nm; T < 1% | Sapphire | 0.3 |
| STO-LP1700 | SWIR | 1700 ± 100 | T>=80% | 1750-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP1800 | SWIR | 1800 ± 50 | T>=80% | 1850-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP2200 | SWIR | 2200 ± 100 | T>=90% | 2700-3500 | 400-1800 nm; T < 1% | Silicon | 0.762 |
| STO-LP2250 | SWIR | 2250 ± 50 | T>=90% | 2400-3600 | 1500-2100 nm; T < 1% | Silicon | 1 |
| STO-LP2900 | MWIR | 2900 ± 50 | T>=90% | 3050-5100 | 1300-2600 nm; T < 1% | Zinc selenide | 0.5 |
| CUT3200 | MWIR | 3400 ± 10 | T>=90% | 3480-5350 | 1500-3266 nm; T < 1% | Germanium | 0.3 |
| CUT3500 | MWIR | 3670 ± 50 | T>=90% | 3800-5600 | 1500-3500 nm; T < 1% | Germanium | 1, 2.5 |
| STO-LP3710+DLC | MWIR | 3710 ± 50 | T>=70% | 4000-5500 | 1500-3400 nm; T < 1% | Silicon | 0.5 |
| STO-LP3730 | MWIR | 3730 ± 50 | T>=90% | 4400-4900 | 1700-3700反射; T < 1% | Germanium | 0.5, 0.7 |
| STO-LP3760 | MWIR | 3760 ± 60 | T>=90% | 3960-4800 | 1600-3480 nm; T < 1% | Germanium | 0.5 |
| STO-LP3850 | MWIR | 3850 ± 50 | T>=90% | 4000-5000 | 1500-3500 nm; T < 1% | Germanium | 0.5 |
| STO-LP4730 | MWIR | 4730 ± 200 | T>=80% | 4900-5150 | 400-4200 nm; T < 1% | Sapphire | 1 |
| STO-LP5800 | MWIR/LWIR transition | 5800 ± 150 | T>=80% | 6000-13000 | 2000-5500 nm; T < 1% | Silicon | 0.5 |
| STO-LP6200 | MWIR/LWIR transition | 6200 ± 100 | T>=90% | 6400-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3, 3.5 |
| STO-LP6300 | MWIR/LWIR transition | 6300 ± 100 | T>=90% | 6550-14500 | 1500-6100 nm; T < 1% | Germanium | 0.3 |
| STO-LP6400 | MWIR/LWIR transition | 6400 ± 100 | T>=90% | 6500-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3 |
| STO-LP6500 | MWIR/LWIR transition | 6500 ± 50 | T>=85% | 6800-11000 | 1500-6200 nm; T < 1% | Germanium | 0.9, 2.8, 3 |
| STO-LP7250 | MWIR/LWIR transition | 7250 ± 50 | T>=90% | 7450-11000 | 1400-7000 nm; T < 1% | Germanium | 2.5 |
| STO-LP7570 | MWIR/LWIR transition | 7570 ± 70 | T>=90% | 7770-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7675 | MWIR/LWIR transition | 7675 ± 75 | T>=90% | 8000-14000 | 1500-7550 nm; T < 1% | Germanium | 0.3 |
| STO-LP7770 | MWIR/LWIR transition | 7770 ± 70 | T>=90% | 7870-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7950 | MWIR/LWIR transition | 7950 ± 150 | T>=85% | 8050-14000 | 190-7800 nm; T < 1% | Germanium | 1 |
| STO-LP9000 | LWIR | 9000 ± 300 | T>=90% | 9500-12500 | 400-8500 nm; T < 1% | Germanium | 0.5 |
| STO-LP10000 | LWIR | 10000 ± 70 | T>=90% | 10150-14300 | 1500-9800 nm; T < 1% | Zinc selenide | 0.5 |
| STO-LP10015 | LWIR | 10015 ± 100 | T>=85% | 10450-14500 | 1500-9800 nm; T < 1% | Germanium | 0.3 |
| STO-LP10600 | LWIR | 10600 ± 100 | T>=80% | 11000-14000 | 1500-10000 nm; T < 1% | Germanium | 2.7 |
| STO-LP10900 | LWIR | 10900 ± 100 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 1 |
| STO-LP11050 | LWIR | 11050 ± 50 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 0.8, 0.9 |
| STO-LP11190 | LWIR | 11190 ± 100 | T>=80% | 11500-15700 | 1500-10750 nm; T < 1% | Germanium | 0.8, 1 |
| STO-LP11600 | LWIR | 11600 ± 100 | T>=85% | 11800-12200 | 7000-11200 nm; T < 1% | Germanium | 0.9 |
| STO-LP11700 | LWIR | 11700 ± 100 | T>=80% | 11900-12300 | 7000-11200 nm; T < 1% | Germanium | 0.8, 0.9, 1, 2.7 |
Autres plages de traitements antireflet infrarouges. Sauf confirmation dans la source, les dimensions et matériaux restent des données de référence à vérifier au devis.
| Modèle de traitement | Plage spectrale | Plage de transmission (nm) | Transmission moyenne | Épaisseur du substrat (mm) |
|---|---|---|---|---|
| STO-AR1000~2600 | SWIR | 1000-2600 | T>=90% | 1, 1.6, 6 |
| STO-AR1000~5100 | MWIR | 1000-5100 | T>=80% | 0.5, 1 |
| STO-AR1200~5500 | MWIR | 1200-5500 | T>=85% | 0.5 |
| STO-AR1250-1650 | SWIR | 1250-1650 | T>=99% | 0.3 |
| STO-AR1500~1600 | SWIR | 1500-1600 | T>=97% | 0.3, 1 |
| STO-AR1580~6900 | MWIR | 1580-6900 | T>=85% | 0.5, 1 |
| STO-AR1600~5300 | MWIR | 1600-5300 | T>=90% | 0.5, 1 |
| STO-AR1800~10000 | MWIR/LWIR transition | 1800-10000 | T>=90% | 1.2 |
| STO-AR1800~6000 | MWIR | 1500-5000 | T>=95% | 0.5 |
| STO-AR2000~12000 | MWIR/LWIR transition | 2000-12000 | T>=85% | 0.5 |
| STO-AR2000~14000 | LWIR | 2000-14000 | T>=80% | 0.5 |
| STO-AR2000~5600 | MWIR | 2000-5600 | T>=85% | 0.3, 1 |
| STO-AR2000~6000 | MWIR | 2000-6000 | T>=90% | 1, 5 |
| STO-AR2100~5500 | MWIR | 2100-5500 | T>=90% | 0.9, 1 |
| STO-AR2300~12600 | MWIR/LWIR transition | 2300-12600 | T>=90% | 1, 1.6 |
| STO-AR2300~5500 | MWIR | 2300-5500 | T>=92% | 1 |
| STO-AR2400~14000 | LWIR | 2400-14000 | T>=80% | 0.8, 2 |
| STO-AR2500~12000 | MWIR/LWIR transition | 2500-12000 | T>=90% | 1, 1.6 |
| STO-AR2500~12600 | MWIR/LWIR transition | 2500-12600 | T>=90% | 1.6 |
| STO-AR2500~14000 | LWIR | 2500-14000 | T>=85% | 0.5 |
| STO-AR2500~3300 | MWIR | 2500-3300 | T>=90% | 0.65, 1, 3 |
| STO-AR2500~4600 | MWIR | 2500-4600 | T>=90% | 0.5 |
| STO-AR2500~4700 | MWIR | 2500-4700 | T>=90% | 0.7, 0.8, 2.9, 12 |
| STO-AR2500~6000 | MWIR | 2500-6000 | T>=85% | 0.5 |
| STO-AR2600~5200 | MWIR | 2600-5200 | T>=90% | 0.5, 4 |
| STO-AR2680~4520 | MWIR | 2680-4520 | T>=90% | 0.5, 2.8, 3 |
| STO-AR2700~5300 | MWIR | 2700-5300 | T>=95% | 0.5 |
| STO-AR2700~9100 | MWIR/LWIR transition | 2700-9100 | T>=90% | 0.5, 5 |
| STO-AR2800~4900 | MWIR | 2800-4900 | T>=90% | 0.9 |
| STO-AR2800~5500 | MWIR | 2800-5500 | T>=90% | 0.5 |
| STO-AR2850~4850 | MWIR | 2850-4850 | T>=90% | 0.5 |
| STO-AR2900~5400 | MWIR | 2900-5400 | T>=90% | 6 |
| STO-AR3000~11000 | MWIR/LWIR transition | 3000-11000 | T>=90% | 0.38, 1.6 |
| STO-AR3000~12600 | MWIR/LWIR transition | 3000-12600 | T>=90% | 0.4, 0.9, 1.6 |
| STO-AR3000~14000 | LWIR | 3000-14000 | T>=90% | 0.3, 0.6, 0.7, 0.75, 0.8, 0.9, 1 |
| STO-AR3100~3600 | MWIR | 3100-3600 | T>=90% | 1 |
| STO-AR3200~3600 | MWIR | 3200-3600 | T>=85% | 0.45, 0.9 |
| STO-AR3200~5500 | MWIR | 3200-5500 | T>=85% | 0.9, 1 |
| STO-AR3400~12500 | MWIR/LWIR transition | 3400-12500 | T>=90% | 1 |
| STO-AR3500~10000 | MWIR/LWIR transition | 3500-10000 | T>=90% | 0.5, 1 |
| STO-AR3500~5000 | MWIR | 3500-5000 | T>=95% | 0.5, 1, 1.6 |
| STO-AR3600~4800 | MWIR | 3600-4800 | T>=95% | 0.5, 1 |
| STO-AR3600~5000 | MWIR | 3600-5000 | T>=95% | 0.5 |
| STO-AR3700~4800 | MWIR | 3700-4800 | T>=90% | 0.5, 1 |
| STO-AR3700~5000 | MWIR | 3700-5000 | T>=95% | 0.9 |
| STO-AR400~1700 | NIR | 400-1700 | T>=90% | 0.85, 1 |
| STO-AR400~3000 | SWIR | 400-3000 | T>=85% | 1.5 |
| STO-AR400~880 | NIR | 400-880 | T>=90% | 0.5 |
| STO-AR420~780 | NIR | 420-780 | T>=90% | 1 |
| STO-AR4300 | IR | 4300 | T>=90% | 1 |
| STO-AR4500~13000 | LWIR | 4500-13000 | T>=90% | 0.8, 1 |
| STO-AR5500~11000 | LWIR | 5500-11000 | T>=90% | 0.8, 2.5 |
| STO-AR5500~14000 | LWIR | 5500-14000 | T>=80% | 0.5 |
| STO-AR6000~10500 | LWIR | 6000-10500 | T>=90% | 0.9, 1 |
| STO-AR6000~11000 | LWIR | 6000-11000 | T>=90% | 2.5 |
| STO-AR6000~13000 | LWIR | 6000-13000 | T>=90% | 1 |
| STO-AR6000~18000 | LWIR | 6000-18000 | T>=48% | 0.8, 1 |
| STO-AR6200~12600 | LWIR | 6200-12600 | T>=90% | 0.5, 0.6, 0.9, 3, 6 |
| STO-AR6500~11000 | LWIR | 6500-11000 | T>=95% | 1 |
| STO-AR7000~12500 | LWIR | 7000-12500 | T>=95% | 0.4, 2.5, 2.8 |
| STO-AR7000~12600 | LWIR | 7000-12600 | T>=90% | 0.7, 0.9, 1, 3 |
| STO-AR7000~14000 | LWIR | 7000-14000 | T>=90% | 1 |
| STO-AR7000~14500 | LWIR | 7000-14500 | T>=90% | 0.8, 1 |
| STO-AR7000~14600 | LWIR | 7000-14600 | T>=90% | 0.9, 1, 3 |
| STO-AR7000~16000 | LWIR | 7000-16000 | T>=90% | 0.8, 0.9, 1, 3.5 |
| STO-AR7400~10700 | LWIR | 7400-10700 | T>=95% | 2.6, 3 |
| STO-AR7400~10900 | LWIR | 7400-10900 | T>=94% | 0.8, 2.9 |
| STO-AR7400~12800 | LWIR | 7400-12800 | T>=90% | 0.9, 1 |
| STO-AR7500~10100 | LWIR | 7500-10100 | T>=90% | 0.7, 0.9, 1, 2.9, 8.7 |
| STO-AR7500~10500 | LWIR | 7500-10500 | T>=93% | 0.7, 1 |
| STO-AR7500~10700 | LWIR | 7500-10700 | T>=90% | 1 |
| STO-AR7500~11000 | LWIR | 7500-11000 | T>=90% | 2.5, 2.8 |
| STO-AR7500~13000 | LWIR | 7500-13000 | T>=90% | 0.9, 5 |
| STO-AR7500~13500 | LWIR | 7500-13500 | T>=90% | 0.8 |
| STO-AR7500~9700 | LWIR | 7500-9700 | T>=85% | 0.75 |
| STO-AR7600~12700 | LWIR | 7600-12700 | T>=93% | 1 |
| STO-AR7700~11000 | LWIR | 7700-11000 | T>=95% | 0.9, 3 |
| STO-AR7700~9300 | LWIR | 7700-9300 | T>=93% | 0.3, 0.75 |
| STO-AR7800~10000 | LWIR | 7800-10000 | T>=95% | 0.9, 1 |
| STO-AR8000~10000 | LWIR | 8000-10000 | T>=92% | 0.9, 2.7, 2.8, 3 |
| STO-AR8000~13500 | LWIR | 8000-13500 | T>=90% | 3 |
| STO-AR8000~15000 | LWIR | 8000-15000 | T>=93% | 2 |
| STO-AR800~4000 | SWIR | 800-4000 | T>=80% | 1 |
| STO-AR9000~16500 | LWIR | 9000-16500 | T>=90% | 1.6 |
| STO-AR900~1700 | SWIR | 900-1700 | T>=90% | 1.6 |
| STO-AR9500~17000 | LWIR | 9500-17000 | T>=80% | 0.7, 1.6 |
Adaptez les filtres IR au matériau du détecteur, à la transmission du substrat et à la température de travail. Les bandes IR ne sont pas interchangeables.
Le matériau peut limiter la plage spectrale utilisable avant même le traitement. Confirmez d'abord le substrat pour les applications IR.
En imagerie thermique ou détection de gaz, précisez la bande d'absorption cible, la plage de blocage et l'environnement de fonctionnement.
La page couvre les besoins de filtres proche IR, IR à ondes courtes, moyennes et longues lorsque les données sont disponibles.
Les matériaux ont des plages de transmission différentes ; le substrat doit convenir à la bande infrarouge cible.
Oui. Bandes spectrales, dimensions, substrats et traitements sur mesure peuvent être étudiés pour les systèmes IR.
Qualité et conformité
Pour les programmes OEM, instruments de laboratoire et systèmes industriels, OPTOStokes présente qualité, conformité des matériaux et assistance technique dès l'évaluation du fournisseur.
Contrôle des procédés, relevés d'inspection et traitements reproductibles pour la production de composants optiques.
La documentation de conformité peut être préparée pour les projets qualifiés et les chaînes d'approvisionnement réglementées.
Les besoins de longueur d'onde, FWHM, substrat, AOI, dimensions et montage peuvent être étudiés avec l'équipe technique.
Précisez longueur d'onde cible, blocage, transmission et exigences du plan pour un devis ciblé.
Notre équipe technique vous aide à choisir la solution optique adaptée.