NIR・SWIR・MWIR・LWIR là các lĩnh vực thiết kế khác nhau
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
OPTOStokes là thương hiệu bộ lọc quang học của Optofilters.com, cung cấp bộ lọc có sẵn và bộ lọc phủ tùy chỉnh cho các ứng dụng UV, VIS, NIR và IR.
Xem bộ lọc hồng ngoại cho hệ thống NIR・SWIR・MWIR・LWIR. So sánh bandpass hồng ngoại trung・bộ lọc hồng ngoại xa・bộ lọc hồng ngoại silicon・bộ lọc hồng ngoại sapphire・cửa sổ germanium AR coating・cửa sổ hồng ngoại metalized cho thiết bị cảm biến và chụp ảnh.
Trước tiên chọn theo vùng hồng ngoại, sau đó kiểm tra độ nhạy detector・độ truyền qua vật liệu nền・dải coating・tiếp xúc môi trường・yêu cầu lắp đặt. Bộ lọc hồng ngoại thường yêu cầu lựa chọn vật liệu khác với bộ lọc khả kiến.
Bộ lọc hồng ngoại OPTOStokes bao phủ ứng dụng cận hồng ngoại (750–1100nm)・hồng ngoại sóng ngắn (SWIR 1.1–2.5µm)・hồng ngoại sóng trung (MWIR 3–5µm)・hồng ngoại sóng dài (LWIR 8–14µm). Catalog còn bao gồm bandpass băng hẹp hồng ngoại trung/xa・bandpass băng rộng・bộ lọc longpass hồng ngoại・AR coating・cửa sổ hồng ngoại metalized, phục vụ ảnh nhiệt・cảm biến khí・quang phổ・đóng gói detector.
| Mẫu | Bước sóng trung tâm (nm) | Độ truyền qua | Độ rộng FWHM (nm) | Mật độ quang học |
|---|---|---|---|---|
| STO-BP680 | 680 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1100 nm |
| STO-BP1120 | 1120 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1150 | 1150 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1173 | 1173 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1250 | 1250 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 700-1800 nm |
| STO-BP1285 | 1285 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1000-1700 nm |
| STO-BP1455 | 1455 ± 2 | T≥50% | 10-20 | OD ≥ 3 at 1200-1800 nm |
| STO-BP1535 | 1535 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1545 | 1545 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1550 | 1550 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1555 | 1555 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1570 | 1570 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1250-1700 nm |
| STO-BP1615 | 1615 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1620 | 1620 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1625 | 1625 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1655 | 1655 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1660 | 1660 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1680 | 1680 ± 10 | T≥90% | 10-20 | OD ≥ 3 at 800-3000 nm |
| STO-BP1685 | 1685 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1695 | 1695 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1935 | 1935 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1940 | 1940 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2050 | 2050 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2180 | 2180 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2230 | 2230 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2270 | 2270 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2340 | 2340 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1100 | 1100 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1120 | 1120 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1125 | 1125 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1150 | 1150 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1173 | 1173 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1200 | 1200 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1235 | 1235 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1245 | 1245 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1250 | 1250 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1290 | 1290 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1300 | 1300 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1320 | 1320 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1340 | 1340 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1380 | 1380 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1430 | 1430 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1445 | 1445 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1450 | 1450 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1530 | 1530 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1535 | 1535 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1540 | 1540 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1550 | 1550 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1570 | 1570 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1575 | 1575 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1600 | 1600 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1610 | 1610 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1630 | 1630 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1650 | 1650 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1654 | 1654 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1660 | 1660 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1680 | 1680 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1700 | 1700 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1714 | 1714 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1716 | 1716 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1780 | 1780 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1800 | 1800 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1810 | 1810 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1818 | 1818 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1830 | 1830 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1920 | 1920 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1930 | 1930 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1935 | 1935 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1940 | 1940 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1945 | 1945 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1950 | 1950 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| Mẫu | Ngưỡng bắt đầu truyền (nm) | Độ truyền qua | Dải truyền qua (nm) | Mật độ quang học |
|---|---|---|---|---|
| STO-LP900 | 900 ± 5 | T≥90% | 910-1100 | OD ≥ 3 at 350-880 nm |
| STO-LP910 | 910 ± 5 | T≥90% | 920-1100 | OD ≥ 3 at 350-890 nm |
| STO-LP920 | 920 ± 5 | T≥90% | 930-1100 | OD ≥ 3 at 350-900 nm |
| STO-LP920 | 920 ± 10 | T≥90% | 940-1700 | OD ≥ 3 at 350-890 nm |
| STO-LP930 | 930 ± 5 | T≥90% | 940-1100 | OD ≥ 3 at 350-910 nm |
| STO-LP940 | 940 ± 5 | T≥90% | 950-1100 | OD ≥ 3 at 350-920 nm |
| STO-LP950 | 950 ± 5 | T≥90% | 970-1100 | OD ≥ 3 at 350-930 nm |
| STO-LP970 | 970 ± 5 | T≥90% | 980-1100 | OD ≥ 3 at 350-940 nm |
| STO-LP1000 | 1000 ± 10 | T≥90% | 1020-2000 | OD ≥ 3 at 350-970 nm |
| STO-LP1010 | 1010 ± 10 | T≥90% | 1030-1200 | OD ≥ 3 at 350-990 nm |
| STO-LP1060 | 1060 ± 10 | T≥88% | 1085-1100 | OD ≥ 3 at 350-1035 nm |
| STO-LP1150 | 1150 ± 10 | T≥90% | 1180-1700 | OD ≥ 3 at 700-1120 nm |
| STO-LP1170 | 1170 ± 10 | T≥90% | 1200-1700 | OD ≥ 3 at 700-1135 nm |
| STO-LP1200 | 1200 ± 10 | T≥90% | 1230-1800 | OD ≥ 3 at 350-1175 nm |
| STO-LP1250 | 1250 ± 10 | T≥90% | 1260-1750 | OD ≥ 3 at 350-1215 nm |
| STO-LP1270 | 1270 ± 10 | T≥90% | 1300-1800 | OD ≥ 3 at 350-1240 nm |
| STO-LP1380 | 1380 ± 10 | T≥90% | 1400-2150 | OD ≥ 3 at 700-1360 nm |
| STO-LP1400 | 1400 ± 10 | T≥90% | 1420-1100 | OD ≥ 3 at 350-1380 nm |
| STO-LP1450 | 1450 ± 10 | T≥90% | 1480-1800 | OD ≥ 3 at 350-1420 nm |
| STO-LP1470 | 1470 ± 10 | T≥90% | 1500-1800 | OD ≥ 3 at 350-1400 nm |
| STO-LP1600 | 1600 ± 10 | T≥90% | 1625-2300 | OD ≥ 3 at 350-1540 nm |
Bộ lọc bandpass băng hẹp hồng ngoại trung và xa sử dụng vật liệu nền silicon・sapphire・germanium・calcium fluoride・zinc selenide cho dải thiết bị MWIR・LWIR. Kích thước tùy chỉnh cũng có sẵn cho mô-đun detector và hệ thống cảm biến nhiệt.
| Mẫu | Vùng IR | Bước sóng trung tâm (nm) | Độ rộng FWHM (nm) | Độ truyền qua đỉnh | Chặn sáng | Đế nền | Kích thước |
|---|---|---|---|---|---|---|---|
| STO-NBP 2750 500nm | MWIR | 2750 ± 50 | 500 ± 60 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2775 250nm | MWIR | 2775 ± 30 | 250 ± 20 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2850 400nm | MWIR | 2850 ± 40 | 400 ± 30 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3080 140nm | MWIR | 3080 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3090 140nm | MWIR | 3090 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3280 160nm | MWIR | 3280 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3310 60nm | MWIR | 3310 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 60nm | MWIR | 3330 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 160nm | MWIR | 3330 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3400 120nm | MWIR | 3400 ± 30 | 120 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3400 180nm | MWIR | 3400 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3420 180nm | MWIR | 3420 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3440 120nm | MWIR | 3440 ± 30 | 120 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 3440 160nm | MWIR | 3440 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3460 150nm | MWIR | 3460 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3800 300nm | MWIR | 3800 ± 40 | 300 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3900 90nm | MWIR | 3900 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3920 90nm | MWIR | 3920 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 3970 90nm | MWIR | 3970 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4000 90nm | MWIR | 4000 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4050 180nm | MWIR | 4050 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4100 180nm | MWIR | 4100 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4200 180nm | MWIR | 4200 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4230 160nm | MWIR | 4230 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 2.9 x 2.9 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 4280 180nm | MWIR | 4280 ± 20 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 130nm | MWIR | 4300 ± 30 | 130 ± 20 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4300 160nm | MWIR | 4300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 180nm | MWIR | 4300 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4320 160nm | MWIR | 4320 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4330 130nm | MWIR | 4330 ± 30 | 130 ± 20 | >=80% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4330 180nm | MWIR | 4330 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4360 180nm | MWIR | 4360 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4380 180nm | MWIR | 4380 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4420 60nm | MWIR | 4420 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4430 60nm | MWIR | 4430 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 60nm | MWIR | 4450 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 200nm | MWIR | 4450 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4480 60nm | MWIR | 4480 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 60nm | MWIR | 4500 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 140nm | MWIR | 4500 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 200nm | MWIR | 4500 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4520 140nm | MWIR | 4520 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4560 160nm | MWIR | 4560 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4600 160nm | MWIR | 4600 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4640 160nm | MWIR | 4640 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4650 160nm | MWIR | 4650 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4680 150nm | MWIR | 4680 ± 30 | 150 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 4690 160nm | MWIR | 4690 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4750 180nm | MWIR | 4750 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4770 150nm | MWIR | 4770 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 5300 600nm | MWIR/LWIR transition | 5300 ± 40 | 600 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7300 300nm | MWIR/LWIR transition | 7300 ± 40 | 300 ± 30 | >=70% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7350 200nm | MWIR/LWIR transition | 7350 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7410 200nm | MWIR/LWIR transition | 7410 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7470 200nm | MWIR/LWIR transition | 7470 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7625 200nm | MWIR/LWIR transition | 7625 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7650 200nm | MWIR/LWIR transition | 7650 ± 30 | 200 ± 30 | >=60% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 8420 200nm | LWIR | 8420 ± 40 | 200 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 9020 180nm | LWIR | 9020 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9080 180nm | LWIR | 9080 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9900 370nm | LWIR | 9900 ± 30 | 370 ± 20 | >=70% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10000 370nm | LWIR | 10000 ± 40 | 370 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10050 370nm | LWIR | 10050 ± 40 | 370 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10270 600nm | LWIR | 10270 ± 40 | 600 ± 30 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10460 370nm | LWIR | 10460 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10500 600nm | LWIR | 10500 ± 50 | 600 ± 40 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10560 370nm | LWIR | 10560 ± 40 | 370 ± 30 | >=75% | 400-18000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10700 370nm | LWIR | 10700 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11500 600nm | LWIR | 11500 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11700 600nm | LWIR | 11700 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 14500 1000nm | LWIR | 14500 ± 50 | 1000 ± 50 | >=70% | 400-19000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
Bộ lọc bandpass băng rộng hồng ngoại cung cấp cửa sổ truyền rộng hơn trong MWIR・LWIR cùng với chặn sáng ngoài dải, phục vụ ảnh nhiệt・phân tích khí・cảm biến hồng ngoại.
| Mẫu | Vùng IR | Dải truyền qua (nm) | Độ truyền qua trung bình | Chặn sáng | Kích thước | Đế nền |
|---|---|---|---|---|---|---|
| STO-WBP 3100-3800nm Filter | MWIR | 3100-3800nm | >=85% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 3250-3500nm Filter | MWIR | 3250-3500nm | >=88% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3550-4150nm Filter | MWIR | 3550-4150nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3670-4970nm Filter | MWIR | 3670-4970nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4500-5000nm Filter | MWIR | 4500-5000nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4750-5400nm Filter | MWIR/LWIR transition | 4750-5400nm | >=80% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 8000-14000nm Filter | LWIR | 8000-14000nm | >75% | 0.4-7.5um, 15-21.5um, < =1% | Custom | Monocrystalline silicon |
| STO-WBP 8000-9450nm Filter | LWIR | 8000-9450nm | >=92% | 400-12000nm, < =1% | Custom | Germanium |
Bộ lọc longpass hồng ngoại truyền vùng bước sóng dài và chặn năng lượng bước sóng ngắn để tách phía detector và đường dẫn ảnh nhiệt.
| Mẫu | Vùng IR | Dải truyền qua (nm) | Độ truyền qua trung bình | Chặn sáng | Kích thước | Đế nền |
|---|---|---|---|---|---|---|
| STOLWP 3000-5000nm Filter | MWIR | 3000-5000nm | >85% | 400-2900nm, < =1% | Custom | Sapphire |
| STOLWP 5500-14000nm | LWIR | 5500-14000nm | >80% | 400-5000nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7000-14000nm Filter | LWIR | 7000-14000nm | >80% | 400-6500nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7700-9000nm Filter | LWIR | 7700-9000nm | >80% | 400-7600nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 8000-12000nm Filter | LWIR | 8000-12000nm | >85% | 400-7500nm, < =1% | Custom | Germanium |
Lớp phủ chống phản xạ hồng ngoại giảm phản xạ bề mặt và cải thiện thông lượng hệ thống cho phần tử quang silicon・sapphire・germanium.
| Lớp phủ | Vùng IR | Dải truyền qua (nm) | Độ truyền qua trung bình | Kích thước | Đế nền |
|---|---|---|---|---|---|
| 0.8-5µm AR | MWIR | 0.8-5um | >=86% | Custom | Sapphire |
| 2.9-14.5µm AR | LWIR | 2.9-14.5um | >=73% | Custom | Germanium |
| 3-5µm AR | MWIR | 3-5um | >=90% | Custom | Monocrystalline silicon |
| 7-12µm AR | LWIR | 7-12um | >=88% | Custom | Monocrystalline silicon |
| 8-12µm AR+DLC | LWIR | 8-12um | >=75% | Custom | Monocrystalline silicon |
| 8-14µm AR | LWIR | 8-14um | >=83% | Custom | Monocrystalline silicon |
Cửa sổ hồng ngoại metalized sử dụng khẩu độ quang được phủ coating và cạnh metalized để hàn hoặc đóng gói kín trong cụm detector và chụp ảnh.
| Specification | Vùng IR | Khẩu độ hữu dụng | Vùng mạ kim loại | Thông số phổ | Đế nền | Kích thước ngoài |
|---|---|---|---|---|---|---|
| 16 x 16 x 0.8mm | MWIR | 13.2 x 13.2 | ≥13.7 x 13.7 | 3-5um, Tavg≥96% | Germanium | 16 x 16 |
| Dia. 12 x 1mm | MWIR | Dia. 10 | ≥Dia. 10.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 12 |
| Dia. 18 x 1mm | MWIR | Dia. 14 | ≥Dia. 14.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 18 |
| Dia. 30 x 1mm | MWIR | Dia. 26 | ≥Dia. 26.5 | 3-5um, Tavg≥96% | Sapphire | Dia. 30 |
| 10 x 10 x 1mm | LWIR | 8.5 x 8.5 x 0.9 | ≥8.9 x 8.9 | 8-12um, Tavg≥82% | Monocrystalline silicon | 10 x 10 x 1 |
| Dia. 2.5 x 0.28mm | SWIR | Dia. 1.6 | ≥Dia. 1.8 | 1250-1650nm, Tavg>99% | Sapphire | Dia. 2.5 |
Các mẫu bandpass IR bổ sung có FWHM tối đa 10 nm. Bản tóm tắt giữ các trường chọn quang học và để kích thước vật lý cho bước xem xét báo giá.
| Mẫu | Vùng phổ | Loại băng thông | CWL (nm) | FWHM (nm) | Độ truyền qua | Chặn sáng | Đế nền | Độ dày đế (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP2475±5 | SWIR | ultra-narrow | 2475 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
| STO-BP2490±5 | SWIR | ultra-narrow | 2490 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
Các mẫu bandpass IR bổ sung có FWHM trên 10 nm đến 20 nm, được nhóm để chọn nhanh bước sóng và băng thông.
| Mẫu | Vùng phổ | Loại băng thông | CWL (nm) | FWHM (nm) | Độ truyền qua | Chặn sáng | Đế nền | Độ dày đế (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP1440±20 | SWIR | narrow | 1440 ± 5 | 20 ± 10 | T>=70% | 400-2200 nm; T < 1% | White glass | 3 |
| STO-BP1645±5 | SWIR | narrow | 1645 ± 5 | 20 ± 5 | T>=90% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1663±5 | SWIR | narrow | 1663 ± 5 | 20 ± 5 | T>=80% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1697 | SWIR | narrow | 1697 ± 2 | 15 ± 2 | T>=85% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1745±15 | SWIR | narrow | 1740 ± 5 | 20 ± 5 | T=55-65% | 400-2200 nm; T < 1.5% | White glass | 3 |
Các mẫu bandpass IR bổ sung có FWHM trên 20 nm để lựa chọn phổ rộng hơn.
| Mẫu | Vùng phổ | Loại băng thông | CWL (nm) | FWHM (nm) | Độ truyền qua | Chặn sáng | Đế nền | Độ dày đế (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP900±30 | NIR | standard | 900 ± 30 | 70 ± 30 | T>=90% | 650-1250 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1380±30 | SWIR | standard | 1380 ± 30 | 70 ± 30 | T>=85% | 500-2000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1600±16 | SWIR | standard | 1600 ± 16 | 150 ± 20 | T>=80% | 400-3000 nm; T < 1% | Corning 7980 | 2 |
| STO-BP1900±20 | SWIR | standard | 1900 ± 20 | 50 ± 15 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP1940±18 | SWIR | standard | 1940 ± 18 | 45 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1, 2 |
| STO-BP2010±20 | SWIR | standard | 2010 ± 20 | 180 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2017±10 | SWIR | standard | 2017 ± 10 | 35 ± 10 | T>=55% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2050±20 | SWIR | standard | 2050 ± 20 | 200 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2120±20 | SWIR | standard | 2120 ± 20 | 50 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2220±20 | SWIR | standard | 2220 ± 20 | 45 ± 10 | T>=75% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2240±20 | SWIR | standard | 2240 ± 20 | 30 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2250±10 | SWIR | standard | 2250 ± 10 | 30 ± 10 | T>=85% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2300±20 | SWIR | standard | 2300 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2310±20 | SWIR | standard | 2310 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2400±24 | SWIR | standard | 2400 ± 24 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2435±10 | SWIR | standard | 2435 ± 10 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2435±20 | SWIR | standard | 2435 ± 20 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2460±20 | SWIR | standard | 2460 ± 20 | 50 ± 10 | T>=80% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2470±30 | SWIR | standard | 2470 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2500±25 | MWIR | standard | 2500 ± 25 | 70 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2520±10 | MWIR | standard | 2520 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2530±30 | MWIR | standard | 2530 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2550±50 | MWIR | standard | 2550 ± 50 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2560±30 | MWIR | standard | 2560 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2570±30 | MWIR | standard | 2570 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2580±30 | MWIR | standard | 2580 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±10 | MWIR | standard | 2600 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±30 | MWIR | standard | 2600 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2610±30 | MWIR | standard | 2610 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2720 | MWIR | standard | 2720 ± 50 | 140 ± 20 | T>=80% | 100-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2730±30 | MWIR | standard | 2730 ± 30 | 210 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 1 |
| STO-BP2750±50 | MWIR | standard | 2750 ± 50 | 140 ± 20 | T>=80% | 200-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2850±28 | MWIR | standard | 2850 ± 28 | 86 ± 20 | T>=80% | 1500-5500 nm; T < 1% | Silicon | 0.5, 6.35 |
| STO-BP2900±20 | MWIR | standard | 2900 ± 20 | 50 ± 10 | T>=70% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP3030±40 | MWIR | standard | 3030 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3050±50 | MWIR | standard | 3050 ± 50 | 100 ± 20 | T>=80% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP3085±30 | MWIR | standard | 3085 ± 30 | 100 ± 20 | T>=80% | 300-30000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3130±40 | MWIR | standard | 3130 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3150±20 | MWIR | standard | 3150 ± 20 | 60 ± 10 | T>=80% | 1500-5500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3250±25 | MWIR | standard | 3250 ± 25 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3250±50 | MWIR | standard | 3250 ± 50 | 180 ± 20 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3275±20 | MWIR | standard | 3275 ± 10 | 30 ± 10 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP3280±30 | MWIR | standard | 3280 ± 30 | 210 ± 15 | T>=75% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3315±10 | MWIR | standard | 3315 ± 10 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3320±50单 | MWIR | standard | 3320 ± 50 | 190 ± 20 | T>=60% | 800-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3330±15 | MWIR | standard | 3330 ± 15 | 160 ± 20 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3360±20 | MWIR | standard | 3360 ± 20 | 70 ± 10 | T>=80% | 1500-6500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3370±35 | MWIR | standard | 3370 ± 35 | 660 ± 70 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25, 0.38 |
| STO-BP3370±50 | MWIR | standard | 3370 ± 50 | 400 ± 30 | T>=80% | 1000-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3375±20 | MWIR | standard | 3375 ± 20 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP3375±40 | MWIR | standard | 3375 ± 40 | 660 ± 70 | T>=85% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3390±35 | MWIR | standard | 3390 ± 35 | 210 ± 10 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3416±20 | MWIR | standard | 3416 ± 20 | 120 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3430±40 | MWIR | standard | 3430 ± 40 | 120 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3440±30 | MWIR | standard | 3440 ± 30 | 120 ± 10 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3580±40 | MWIR | standard | 3580 ± 40 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3615±20 | MWIR | standard | 3615 ± 20 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3630±50 | MWIR | standard | 3630 ± 50 | 145 ± 20 | T>=80% | 400-15000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3660±20 | MWIR | standard | 3660 ± 20 | 40 ± 10 | T>=80% | 800-6000 nm; T < 1% | Silicon | 0.5, 0.916 |
| STO-BP3680±40 | MWIR | standard | 3680 ± 40 | 162 ± 24 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3770±20 | MWIR | standard | 3770 ± 20 | 50 ± 10 | T>=80% | 400-13600 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3940±60 | MWIR | standard | 3940 ± 60 | 90 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3950±39 | MWIR | standard | 3950 ± 39 | 200 ± 20 | T>=85% | 400-8000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3990±50 | MWIR | standard | 3990 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4020±40 | MWIR | standard | 4020 ± 40 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4050±50 | MWIR | standard | 4050 ± 50 | 100 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4060±50 | MWIR | standard | 4060 ± 50 | 100 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4073±40 | MWIR | standard | 4073 ± 40 | 125 ± 50 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4260±50 | MWIR | standard | 4260 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4320±50 | MWIR | standard | 4320 ± 50 | 600 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4380±50 | MWIR | standard | 4380 ± 50 | 150 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4490±70 | MWIR | standard | 4490 ± 70 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4515±20 | MWIR | standard | 4515 ± 20 | 90 ± 20 | T>=75% | 200-30000 nm; T < 1% | Sapphire | 1 |
| STO-BP4530±45 | MWIR | standard | 4530 ± 45 | 350 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-BP4560±40 | MWIR | standard | 4560 ± 40 | 310 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4580±60 | MWIR | standard | 4580 ± 60 | 140 ± 20 | T>=70% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±50 | MWIR | standard | 4680 ± 50 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±55 | MWIR | standard | 4680 ± 55 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±60 | MWIR | standard | 4680 ± 60 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±20 | MWIR | standard | 4710 ± 20 | 140 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±40 | MWIR | standard | 4710 ± 40 | 180 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP4760±50 | MWIR | standard | 4760 ± 50 | 285 ± 70 | T>=80% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4830±40 | MWIR | standard | 4830 ± 40 | 220 ± 20 | T>=75% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP5000±50 | MWIR/LWIR transition | standard | 5000 ± 50 | 150 ± 20 | T>=85% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5010±50 | MWIR/LWIR transition | standard | 5010 ± 50 | 220 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP5070±40 | MWIR/LWIR transition | standard | 5070 ± 50 | 100 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP5120±50 | MWIR/LWIR transition | standard | 5120 ± 50 | 320 ± 20 | T>=70% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-BP5200±50 | MWIR/LWIR transition | standard | 5200 ± 50 | 610 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5250±50 | MWIR/LWIR transition | standard | 5250 ± 50 | 90 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP5380±30 | MWIR/LWIR transition | standard | 5380 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5450±30 | MWIR/LWIR transition | standard | 5450 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5480±30 | MWIR/LWIR transition | standard | 5480 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5600±60 | MWIR/LWIR transition | standard | 5600 ± 60 | 120 ± 20 | T>=80% | 1000-10000 nm | Silicon | 1.5 |
| STO-BP5850±50 | MWIR/LWIR transition | standard | 5850 ± 50 | 200 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5850±60 | MWIR/LWIR transition | standard | 5850 ± 60 | 160 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5950±50 | MWIR/LWIR transition | standard | 5950 ± 50 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6050±50 | MWIR/LWIR transition | standard | 6050 ± 50 | 200 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6150±60 | MWIR/LWIR transition | standard | 6150 ± 60 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6220±30 | MWIR/LWIR transition | standard | 6220 ± 62 | 140 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6235±30 | MWIR/LWIR transition | standard | 6235 ± 30 | 110 ± 20 | T>=60% | 400-11000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-BP6240±40 | MWIR/LWIR transition | standard | 6240 ± 40 | 90 ± 20 | T>=70% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP6250±30 | MWIR/LWIR transition | standard | 6250 ± 30 | 120 ± 20 | T>=70% | 400-15000 nm; T < 1% | Silicon | 1 |
| STO-BP6820±68 | MWIR/LWIR transition | standard | 6820 ± 68 | 100 ± 20 | T>=75% | 400-10600 nm; T < 1% | Silicon | 1 |
| STO-BP6910±20 | MWIR/LWIR transition | standard | 6910 ± 30 | 90 ± 20 | T>=65% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP7400±50 | MWIR/LWIR transition | standard | 7400 ± 50 | 360 ± 20 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5 |
| STO-BP7500±50 | MWIR/LWIR transition | standard | 7500 ± 50 | 2500 ± 100 | T>=90% | 400-17100 nm; T < 1% | Germanium | 0.6 |
| STO-BP7530±30 | MWIR/LWIR transition | standard | 7530 ± 30 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7690±50 | MWIR/LWIR transition | standard | 7690 ± 50 | 340 ± 30 | T>=70% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7700±50 | MWIR/LWIR transition | standard | 7700 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7720±50 | MWIR/LWIR transition | standard | 7720 ± 50 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7760±50 | MWIR/LWIR transition | standard | 7760 ± 50 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7780±20 | MWIR/LWIR transition | standard | 7780 ± 20 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7800±50 | MWIR/LWIR transition | standard | 7800 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7890±80 | MWIR/LWIR transition | standard | 7890 ± 80 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7950±50 | MWIR/LWIR transition | standard | 7950 ± 50 | 450 ± 30 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7950±80 | MWIR/LWIR transition | standard | 7950 ± 80 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8010±20 | LWIR | standard | 8010 ± 20 | 200 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8060±60 | LWIR | standard | 8060 ± 60 | 250 ± 20 | T>80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8120±30 | LWIR | standard | 8120 ± 30 | 250 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8340±30 | LWIR | standard | 8340 ± 30 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8350±100 | LWIR | standard | 8350 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8400±100 | LWIR | standard | 8400 ± 100 | 50 ± 20 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8500±100 | LWIR | standard | 8500 ± 100 | 50 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8550±100 | LWIR | standard | 8550 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8700±100 | LWIR | standard | 8700 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8800±100 | LWIR | standard | 8800 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP10100±100 | LWIR | standard | 10100 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10220±100 | LWIR | standard | 10220 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10580±50 | LWIR | standard | 10580 ± 50 | 250 ± 20 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP10860±150 | LWIR | standard | 10860 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11100±150 | LWIR | standard | 11100 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11200±150 | LWIR | standard | 11200 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11500±50 | LWIR | standard | 11500 ± 50 | 550 ± 50 | T>=65% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11580±60 | LWIR | standard | 11580 ± 60 | 550 ± 50 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP12600±100 | LWIR | standard | 12600 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP12750±100 | LWIR | standard | 12750 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13000±100 | LWIR | standard | 13000 ± 100 | 4000 ± 100 | T>=85% | 1200-20000 nm; T < 1% | Germanium | 0.75, 0.9 |
| STO-BP13250±100 | LWIR | standard | 13250 ± 100 | 850 ± 50 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13650±100 | LWIR | standard | 13650 ± 100 | 850 ± 50 | T>=80% | 400-15000 nm; T < 1% | Germanium | 0.5 |
| STO-BP15000±200 | LWIR | standard | 15000 ± 200 | 2200 ± 50 | T>=65% | 2000-25000 nm; T < 1% | Germanium | 2.2 |
| STO-BP16000±200 | LWIR | standard | 16000 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
| STO-BP16200±200 | LWIR | standard | 16200 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
Các mẫu băng rộng bổ sung cho cảm biến, tạo ảnh và đường quang detector MWIR/LWIR.
| Mẫu | Vùng phổ | Dải thông (nm) | Dải truyền qua (nm) | Độ truyền qua | Chặn sáng | Đế nền | Độ dày đế (mm) |
|---|---|---|---|---|---|---|---|
| STO-WBP1000~3000 | SWIR | 970 ± 100 – 2470 ± 100 | 1100-2300 | T>=90% | 200-3560 nm; T < 1% | Glass ceramic | 1 |
| STO-WBP1520~1850 | SWIR | 1520 ± 50 – 1850 ± 50 | 1600-1750 | T>=80% | 400-3300 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP1550~1750 | SWIR | 1550 ± 50 – 1750 ± 50 | 1600-1700 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1550~5050 | MWIR | 1550 ± 50 – 5050 ± 50 | 1600-5000 | T>=80% | 1500-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1650~2350 | SWIR | 1650 ± 50 – 2350 ± 50 | 1700-2250 | T>=80% | 400-4000 nm; T < 10% | Silicon | 0.5 |
| STO-WBP2050~2350 | SWIR | 2050 ± 50 – 2350 ± 50 | 2150-2250 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1, 1.2 |
| STO-WBP2050~2500 | SWIR | 2050 ± 50 – 2500 ± 50 | 2150-2450 | T>=80% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2080~2350 | SWIR | 2080 ± 50 – 2350 ± 50 | 2135-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP2080~2430 | SWIR | 2080 ± 50 – 2430 ± 50 | 2180-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2170~3670 | MWIR | 2170 ± 50 – 3670 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3600 | MWIR | 2200 ± 50 – 3750 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3700 | MWIR | 2250 ± 30 – 3770 ± 30 | 2300-3700 | T>=90% | 1500-5000 nm; T < 1% | Silicon | 1 |
| STO-WBP2400~3150 | MWIR | 2400 ± 50 – 3150 ± 50 | 2500-3000 | T>=90% | 400-10500 nm; T < 1% | Sapphire | 1, 5 |
| STO-WBP2450~3200 | MWIR | 2450 ± 20 – 3200 ± 20 | 2500-3140 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 2.5 |
| STO-WBP2450~4600 | MWIR | 2450 ± 50 – 4600 ± 50 | 2550-4500 | T>=90% | 400-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2450~5150 | MWIR | 2450 ± 50 – 5150 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2490~5240 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2600~5000 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Germanium | 0.5, 0.9, 1 |
| STO-WBP2500-5000 | MWIR | 2500 ± 50 – 5000 ± 50 | 2700-4900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP2500~5100 | MWIR | 2500 ± 50 – 5100 ± 50 | 2650-4950 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2550~3150 | MWIR | 2550 ± 50 – 3150 ± 50 | 2700-3100 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2550~3250 | MWIR | 2550 ± 50 – 3250 ± 50 | 2700-3100 | T>=90% | 430-10030 nm; T < 1% | Silicon | 0.5, 2.5 |
| STO-WBP2600~3300 | MWIR | 2600 ± 50 – 3300 ± 50 | 2850-3000 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP2650~5050 | MWIR | 2600 ± 100 – 5050 ± 50 | 2750-4950 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2650~3000 | MWIR | 2650 ± 40 – 3000 ± 40 | 2700-2950 | T>=85% | 1000-6000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP2700-3550 | MWIR | 2700 ± 50 – 3550 ± 50 | 2800-3450 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2700-3600 | MWIR | 2700 ± 50 – 3600 ± 50 | 2800-3500 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP2700~3150 | MWIR | 2700 ± 50 – 3150 ± 50 | 2800-3050 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2720~2980 | MWIR | 2720 ± 20 – 2980 ± 20 | 2780-2920 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2730~3010 | MWIR | 2730 ± 20 – 3010 ± 20 | 2800-2900 | T>=85% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2750~4850 | MWIR | 2750 ± 50 – 4850 ± 50 | 3000-4600 | T>=85% | 1000-5100 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP2750~5100 | MWIR | 2750 ± 50 – 5100 ± 50 | 2900-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2790~3070 | MWIR | 2790 ± 20 – 3070 ± 20 | 2900-3000 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP2800~3050 | MWIR | 2800 ± 50 – 3050 ± 50 | 2900-3000 | T>=90% | 1500-6500 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5150 | MWIR | 2800 ± 50 – 5150 ± 50 | 2950-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP2800~5200单 | MWIR | 2800 ± 100 – 5200 ± 100 | 2900-5100 | T>=55% | 2580-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5250 | MWIR | 2800 ± 50 – 5250 ± 50 | 2950-5100 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4140 | MWIR | 2900 ± 50 – 4140 ± 50 | 3100-4040 | T>=90% | 700-8040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4450 | MWIR | 2900 ± 50 – 4450 ± 50 | 3050-4350 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP2900~4550 | MWIR | 2900 ± 50 – 4550 ± 50 | 3050-4450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4850 | MWIR | 2900 ± 50 – 4850 ± 50 | 3050-4750 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2900~5100 | MWIR | 2900 ± 50 – 5100 ± 50 | 3000-5000 | T>=90% | 1000-10500 nm; T < 1% | Germanium | 0.3, 0.4, 0.7 |
| STO-WBP2950~3250 | MWIR | 2950 ± 50 – 3250 ± 50 | 3000-3200 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2950~3600 | MWIR | 2950 ± 50 – 3600 ± 50 | 3150-3400 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~3650 | MWIR | 2950 ± 50 – 3650 ± 50 | 3150-3450 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~4950 | MWIR | 2950 ± 50 – 4950 ± 50 | 3100-4800 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3000~3300 | MWIR | 3000 ± 20 – 3300 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP3000~3700 | MWIR | 3000 ± 50 – 3700 ± 50 | 3100-3600 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3000~3800 | MWIR | 3000 ± 100 – 3800 ± 100 | 3100-3700 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3000~3875 | MWIR | 3000 ± 100 – 3875 ± 75 | 3250-3650 | T>=80% | 500-5500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3000~4260 | MWIR | 3000 ± 50 – 4260 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~4300 | MWIR | 3000 ± 50 – 4300 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~5300 | MWIR | 3000 ± 50 – 5300 ± 50 | 3150-5150 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3000~5400 | MWIR | 3000 ± 50 – 5400 ± 50 | 3100-5300 | T>=90% | 1500-2800 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP3020~3320 | MWIR | 3020 ± 20 – 3320 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3040~4320 | MWIR | 3040 ± 50 – 4320 ± 50 | 3250-4050 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~4200 | MWIR | 3050 ± 50 – 4200 ± 50 | 3250-3900 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5000 | MWIR | 3050 ± 50 – 5000 ± 50 | 3200-4850 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5450 | MWIR | 3050 ± 50 – 5450 ± 50 | 3200-5300 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3100~3700 | MWIR | 3100 ± 150 – 3700 ± 150 | 3200-3600 | T>=90% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3100~4100 | MWIR | 3100 ± 50 – 4100 ± 50 | 3300-3900 | T>=90% | 900-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3100~4150 | MWIR | 3100 ± 50 – 4150 ± 50 | 3250-4050 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3100~4200 | MWIR | 3100 ± 50 – 4200 ± 50 | 3250-4050 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3100~4250 | MWIR | 3100 ± 50 – 4250 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3130~3400 | MWIR | 3130 ± 50 – 3400 ± 50 | 3250-3350 | T>=75% | 500-3700 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3150~3560 | MWIR | 3150 ± 50 – 3560 ± 50 | 3300-3500 | T>=85% | 400-10000 nm; T < 1% | Sapphire | 0.3 |
| STO-WBP3150~3600 | MWIR | 3150 ± 50 – 3600 ± 50 | 3250-3520 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~3650 | MWIR | 3150 ± 50 – 3650 ± 50 | 3250-3500 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~4100 | MWIR | 3150 ± 50 – 4100 ± 50 | 3250-4000 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3150~4200 | MWIR | 3150 ± 50 – 4200 ± 50 | 3300-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~5150 | MWIR | 3150 ± 50 – 5150 ± 50 | 3300-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3180-3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3380 | T>=85% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3180~3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3400 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~3500 | MWIR | 3200 ± 50 – 3500 ± 50 | 3250-3450 | T>=85% | 500-3700 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3200~3550 | MWIR | 3200 ± 50 – 3550 ± 50 | 3280-3480 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.7, 0.9 |
| STO-WBP3200~4000 | MWIR | 3200 ± 50 – 4000 ± 50 | 3350-3850 | T>=90% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP3200~4100 | MWIR | 3200 ± 50 – 4100 ± 50 | 3300-4000 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~5200 | MWIR | 3200 ± 100 – 5200 ± 100 | 3300-5050 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.3 |
| STO-WBP3170~3430 | MWIR | 3220 ± 20 – 3480 ± 20 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3, 0.9, 1 |
| STO-WBP3230~3500 | MWIR | 3230 ± 50 – 3500 ± 50 | 3250-3480 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3230~3520 | MWIR | 3230 ± 30 – 3520 ± 30 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3250~4200 | MWIR | 3250 ± 50 – 4200 ± 50 | 3400-4100 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP3270~3470 | MWIR | 3270 ± 50 – 3470 ± 50 | 3320-3420 | T>=80% | 200-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3300~4250 | MWIR | 3300 ± 50 – 4250 ± 50 | 3450-4150 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3300~4900 | MWIR | 3300 ± 50 – 4900 ± 50 | 3400-4800 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3400~3600 | MWIR | 3325 ± 25 – 3675 ± 25 | 3450-3550 | T>=90% | 900-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3350~4250 | MWIR | 3350 ± 50 – 4250 ± 50 | 3550-4150 | T>=90% | 430-10030 nm; T < 1% | Silicon | 2.5 |
| STO-WBP3350~4500 | MWIR | 3350 ± 50 – 4500 ± 50 | 3500-4350 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3350~4750 | MWIR | 3350 ± 50 – 4750 ± 50 | 3450-4650 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4000 | MWIR | 3400 ± 50 – 4000 ± 50 | 3500-3850 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3400~4100 | MWIR | 3400 ± 100 – 4100 ± 100 | 3550-4000 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3400~4200 | MWIR | 3400 ± 100 – 4200 ± 100 | 3550-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5, 1 |
| STO-WBP3400~4300 | MWIR | 3400 ± 50 – 4300 ± 50 | 3500-4200 | T>=80% | 1500-7000 nm; T < 1% | Sapphire | 2.5 |
| STO-WBP3400~4800 | MWIR | 3400 ± 50 – 4800 ± 50 | 3500-4700 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4850 | MWIR | 3400 ± 50 – 4850 ± 50 | 3400-4500 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4950 | MWIR | 3400 ± 50 – 4950 ± 50 | 3700-4700 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5000 | MWIR | 3400 ± 50 – 5000 ± 50 | 3500-4900 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5100 | MWIR | 3400 ± 50 – 5100 ± 50 | 3600-5000 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3420~3910 | MWIR | 3420 ± 50 – 3910 ± 50 | 3500-3830 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3425~4850 | MWIR | 3425 ± 75 – 4850 ± 50 | 3650-4750 | T>=85% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3440~4890 | MWIR | 3440 ± 50 – 4890 ± 50 | 3500-4830 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3450~4000 | MWIR | 3450 ± 50 – 4000 ± 50 | 3500-3900 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3450~4050 | MWIR | 3450 ± 50 – 4050 ± 50 | 3600-3900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3470~4950 | MWIR | 3470 ± 50 – 4950 ± 50 | 3570-4850 | T>=90% | 500-10070 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3480~4880 | MWIR | 3480 ± 50 – 4880 ± 50 | 3700-4800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3490~3850 | MWIR | 3490 ± 50 – 3850 ± 50 | 3550-3750 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~3950 | MWIR | 3490 ± 50 – 3950 ± 50 | 3650-3800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~4050 | MWIR | 3490 ± 50 – 4050 ± 50 | 3650-3950 | T>=80% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-WBP3500~4150 | MWIR | 3500 ± 50 – 4150 ± 50 | 3600-4050 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~4900 | MWIR | 3500 ± 50 – 4900 ± 50 | 3600-4800 | T>=70% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3500~4950 | MWIR | 3500 ± 50 – 4950 ± 50 | 3560-4900 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5300 | MWIR | 3500 ± 50 – 5300 ± 50 | 3600-5100 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5600 | MWIR | 3500 ± 50 – 5600 ± 50 | 3600-5500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3525~4925 | MWIR | 3525 ± 100 – 4950 ± 100 | 3700-4800 | T>=90% | 1500-9000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3530~3950 | MWIR | 3530 ± 50 – 3950 ± 50 | 3610-3870 | T>=75% | 400-5580 nm; T < 1% | Silicon | 0.5, 1.2 |
| STO-WBP3500~3970 | MWIR | 3545 ± 20 – 4015 ± 20 | 3610-3955 | T>=80% | 450-5600 nm; T < 1% | Zinc selenide | 2 |
| STO-WBP3550~4100 | MWIR | 3550 ± 50 – 4100 ± 50 | 3650-4000 | T>=93% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4250 | MWIR | 3550 ± 50 – 4250 ± 50 | 3600-4200 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3550~4750 | MWIR | 3550 ± 50 – 4750 ± 50 | 3650-4650 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4950 | MWIR | 3550 ± 50 – 4950 ± 50 | 3700-4800 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4990 | MWIR | 3550 ± 50 – 4990 ± 50 | 3600-4800 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~5000 | MWIR | 3550 ± 50 – 5000 ± -100 | 3700-4600 | T>=90% | 1500-10500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3600-4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3620-3890 | T>=75% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3600~4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3680-3900 | T>=75% | 400-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP3600~4300 | MWIR | 3600 ± 50 – 4300 ± 50 | 3700-4200 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3600~4850 | MWIR | 3600 ± 50 – 4850 ± 50 | 3700-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3600~5000 | MWIR | 3600 ± 50 – 5000 ± 50 | 3700-4700 | T>=90% | 400-9000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3600~5100 | MWIR | 3600 ± 100 – 5100 ± 100 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3600~5300 | MWIR | 3600 ± 50 – 5300 ± 50 | 3700-5200 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3600~5450 | MWIR | 3600 ± 50 – 5450 ± 50 | 3800-5250 | T>=80% | 400-6000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3600~5550 | MWIR | 3600 ± 50 – 5550 ± 50 | 3700-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3605~5275 | MWIR | 3605 ± 25 – 5275 ± 25 | 3730-5150 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3650~4265 | MWIR | 3650 ± 50 – 4265 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5050 | MWIR | 3650 ± 50 – 5050 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5100 | MWIR | 3650 ± 50 – 5100 ± 50 | 3740-5000 | T>=93% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5150 | MWIR | 3650 ± 70 – 5150 ± 70 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3650~5350 | MWIR | 3650 ± 50 – 5350 ± 50 | 3800-5200 | T>=90% | 400-11000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5550 | MWIR | 3650 ± 50 – 5550 ± 50 | 3750-5300 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3650~5600 | MWIR | 3650 ± 50 – 5600 ± 50 | 3750-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5750 | MWIR | 3650 ± 50 – 5750 ± 50 | 3750-5450 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4500 | MWIR | 3650 ± 50 – 4600 ± 50 | 3700-4500 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3660~4250 | MWIR | 3660 ± 50 – 4250 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP3800~4850 | MWIR | 3675 ± 25 – 4975 ± 25 | 3800-4850 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3680~5160 | MWIR | 3700 ± 100 – 5200 ± 100 | 3800-4700 | T>=90% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~4550 | MWIR | 3700 ± 50 – 4550 ± 50 | 3800-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3700~4700 | MWIR | 3700 ± 50 – 4700 ± 50 | 3800-4600 | T>=85% | 500-8000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4990 | MWIR | 3700 ± 50 – 4990 ± 40 | 3800-4750 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.38, 0.7 |
| STO-WBP3700~5020 | MWIR | 3700 ± 50 – 5020 ± 50 | 3800-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5150 | MWIR | 3700 ± 50 – 5150 ± 50 | 3750-4900 | T>=92% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5200 | MWIR | 3700 ± 60 – 5200 ± 60 | 3850-5050 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~5600 | MWIR | 3700 ± 50 – 5600 ± 50 | 3850-5450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5750 | MWIR | 3700 ± 50 – 5750 ± 50 | 3850-5500 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5800 | MWIR | 3700 ± 50 – 5800 ± 50 | 3850-5600 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 1 |
| STO-WBP3710~5030 | MWIR | 3710 ± 30 – 5030 ± 30 | 3800-4900 | T>=90% | 1800-7000 nm; T < 1% | Silicon | 1 |
| STO-WBP3730~4850 | MWIR | 3730 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3730~4900 | MWIR | 3730 ± 50 – 4900 ± 50 | 3850-4750 | T>=90% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.4 |
| STO-WBP3730~4960 | MWIR | 3730 ± 50 – 4960 ± 50 | 3850-4600 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3740~4840 | MWIR | 3740 ± 50 – 4840 ± 50 | 3740-4840 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3740~4860 | MWIR | 3740 ± 40 – 4860 ± 40 | 3850-4700 | T>=85% | 1000-10000 nm; T < 1% | Germanium | 0.3, 0.38, 0.4 |
| STO-WBP3740~4950 | MWIR | 3740 ± 50 – 4950 ± 50 | 3900-4800 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3750~4500 | MWIR | 3750 ± 50 – 4500 ± 50 | 3850-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~4850 | MWIR | 3750 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3750~4900 | MWIR | 3750 ± 50 – 4900 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3750~5020 | MWIR | 3750 ± 50 – 5020 ± 50 | 3850-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3750~5050 | MWIR | 3750 ± 50 – 5050 ± 50 | 3900-4900 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3750~5650 | MWIR | 3750 ± 50 – 5650 ± 50 | 4000-5300 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3750~5700 | MWIR | 3750 ± 50 – 5700 ± 50 | 4000-5500 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~5800 | MWIR | 3750 ± 50 – 5800 ± 50 | 3800-5600 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3800~4100 | MWIR | 3800 ± 50 – 4100 ± 50 | 3850-4050 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP3800~4700 | MWIR | 3800 ± 50 – 4700 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3800~5500 | MWIR | 3800 ± 100 – 5500 ± 100 | 3900-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5150 | MWIR | 3900 ± 100 – 5150 ± 50 | 4400-4800 | T>=85% | 500-6500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5600 | MWIR | 3900 ± 100 – 5600 ± 100 | 4000-5500 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5650 | MWIR | 3900 ± 100 – 5650 ± 100 | 4100-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP4000~4650 | MWIR | 4000 ± 50 – 4650 ± 50 | 4120-4480 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4000~5000 | MWIR | 4000 ± 200 – 5000 ± 200 | 4200-4900 | T>=85% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP4000~5200 | MWIR | 4000 ± 50 – 5200 ± 50 | 4100-5000 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP4100~4650 | MWIR | 4100 ± 50 – 4650 ± 50 | 4200-4550 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP4120~4360 | MWIR | 4120 ± 60 – 4360 ± 60 | 4220-4320 | T>=85% | 300-6500 nm; T < 1% | Silicon | 1 |
| STO-WBP4140~4370 | MWIR | 4140 ± 30 – 4370 ± 30 | 4200-4300 | T>=75% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4140~4440 | MWIR | 4140 ± 30 – 4440 ± 30 | 4200-4400 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4150~4650 | MWIR | 4150 ± 50 – 4650 ± 50 | 4250-4550 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4200~4450 | MWIR | 4200 ± 20 – 4450 ± 20 | 4250-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4200~4750 | MWIR | 4200 ± 50 – 4750 ± 50 | 4250-4650 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4200~5000 | MWIR | 4200 ± 50 – 5000 ± 50 | 4350-4800 | T>=85% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP4212~4457 | MWIR | 4212 ± 40 – 4457 ± 40 | 4260-4400 | T>=80% | 300-6500 nm; T < 1% | Silicon | 0.95 |
| STO-WBP4230~4520 | MWIR | 4230 ± 20 – 4520 ± 20 | 4350-4450 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP4250~4800 | MWIR | 4250 ± 50 – 4800 ± 50 | 4350-4700 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4250~5300 | MWIR | 4250 ± 50 – 5300 ± 50 | 4400-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4290~4580 | MWIR | 4290 ± 20 – 4580 ± 20 | 4400-4500 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP4300~4500 | MWIR | 4300 ± 30 – 4500 ± 30 | 4350-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4400~4700 | MWIR | 4400 ± 50 – 4700 ± 50 | 4570-4600 | T>=80% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4420~4720 | MWIR | 4420 ± 50 – 4720 ± 50 | 4470-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~4750 | MWIR | 4450 ± 70 – 4750 ± 70 | 4570-4620 | T>=70% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4450~4950 | MWIR | 4450 ± 50 – 4950 ± 50 | 4550-4900 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~5150 | MWIR | 4450 ± 50 – 5150 ± 50 | 4550-5050 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4500~4800 | MWIR | 4500 ± 50 – 4800 ± 50 | 4640-4740 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP4500~4900 | MWIR | 4500 ± 50 – 4900 ± 50 | 4600-4800 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.8 |
| STO-WBP4520~4720 | MWIR | 4520 ± 50 – 4720 ± 50 | 4570-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP4520~4820 | MWIR | 4520 ± 50 – 4820 ± 50 | 4570-4770 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4550~5200 | MWIR | 4550 ± 50 – 5300 ± 50 | 4600-5150 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4600~4900 | MWIR | 4600 ± 50 – 4900 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4950 | MWIR | 4650 ± 50 – 4950 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4980 | MWIR | 4650 ± 50 – 4980 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP4650~5300 | MWIR | 4650 ± 50 – 5300 ± 50 | 4800-5200 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4750~5150 | MWIR | 4750 ± 50 – 5150 ± 50 | 4800-5000 | T>=80% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4800~5000 | MWIR | 4800 ± 50 – 5000 ± 50 | 4850-4950 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1.2 |
| STO-WBP4800~5100 | MWIR | 4800 ± 50 – 5100 ± 50 | 4850-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4800~5200 | MWIR/LWIR transition | 4800 ± 50 – 5200 ± 50 | 4860-5140 | T>=90% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4900~5100 | MWIR/LWIR transition | 4900 ± 50 – 5100 ± 50 | 4950-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4920~5800 | MWIR/LWIR transition | 4920 ± 50 – 5800 ± 50 | 5100-5600 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4950~9250 | MWIR/LWIR transition | 4950 ± 50 – 9250 ± 50 | 5100-9100 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP5000~5800 | MWIR/LWIR transition | 5000 ± 50 – 5800 ± 50 | 5100-5600 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5010~5880 | MWIR/LWIR transition | 5010 ± 50 – 5880 ± 50 | 5110-5780 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5030~9280 | MWIR/LWIR transition | 5030 ± 50 – 9280 ± 50 | 5180-9130 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5050~9160 | MWIR/LWIR transition | 5050 ± 50 – 9160 ± 50 | 5300-8750 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5090~9450 | MWIR/LWIR transition | 5090 ± 90 – 9450 ± 90 | 5240-9300 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5100~5850 | MWIR/LWIR transition | 5100 ± 50 – 5850 ± 50 | 5300-5700 | T>=75% | 400-10000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP5100~9350 | MWIR/LWIR transition | 5100 ± 50 – 9350 ± 50 | 6100-9200 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~6000 | MWIR/LWIR transition | 5150 ± 50 – 6000 ± 50 | 5050-5900 | T>=80% | 500-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~9450 | MWIR/LWIR transition | 5150 ± 50 – 9450 ± 50 | 5400-9100 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5240~9440 | MWIR/LWIR transition | 5240 ± 70 – 9440 ± 70 | 6000-9000 | T>=80% | 580-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP5400~7400 | MWIR/LWIR transition | 5400 ± 50 – 7400 ± 50 | 5500-7300 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5450~7600 | MWIR/LWIR transition | 5450 ± 50 – 7600 ± 50 | 5600-7400 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5510~6700 | MWIR/LWIR transition | 5510 ± 60 – 6700 ± 60 | 5700-6500 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP5550~7550 | MWIR/LWIR transition | 5550 ± 50 – 7550 ± 50 | 5750-7250 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7600 | MWIR/LWIR transition | 5550 ± 50 – 7600 ± 50 | 5750-7300 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7650 | MWIR/LWIR transition | 5550 ± 50 – 7650 ± 50 | 5700-7450 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5550~7700 | MWIR/LWIR transition | 5550 ± 50 – 7700 ± 50 | 5700-7500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5600~6800 | MWIR/LWIR transition | 5600 ± 30 – 6800 ± 30 | 5700-6680 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6000~12100 | LWIR | 6000 ± 200 – 12100 ± 200 | 6200-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP6200~10200 | LWIR | 6200 ± 100 – 10200 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6220~7530 | MWIR/LWIR transition | 6220 ± 50 – 7530 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~7600 | MWIR/LWIR transition | 6300 ± 50 – 7600 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~9900 | LWIR | 6300 ± 100 – 9900 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6400~10100 | LWIR | 6400 ± 100 – 10100 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP6420~10100 | LWIR | 6420 ± 50 – 10100 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP6450~10750 | LWIR | 6450 ± 100 – 10750 ± 100 | 6600-10600 | T>=90% | 1500-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP6450~7750 | MWIR/LWIR transition | 6450 ± 50 – 7750 ± 50 | 6650-7550 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6550~8250 | MWIR/LWIR transition | 6550 ± 100 – 8250 ± 100 | 6700-8100 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6600~8300 | MWIR/LWIR transition | 6600 ± 100 – 8300 ± 100 | 6750-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6650~8750 | MWIR/LWIR transition | 6650 ± 50 – 8750 ± 50 | 6800-8500 | T>=75% | 1500-11000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP6650~9760 | LWIR | 6650 ± 50 – 9760 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6800~8100 | MWIR/LWIR transition | 6800 ± 80 – 8100 ± 80 | 7100-7800 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP6800~8300 | MWIR/LWIR transition | 6800 ± 100 – 8300 ± 100 | 6950-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7100~8400 | MWIR/LWIR transition | 7100 ± 80 – 8400 ± 80 | 7400-8100 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP7200~8500 | MWIR/LWIR transition | 7200 ± 80 – 8500 ± 80 | 7500-8200 | T>=90% | 200-12000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7200~9400 | LWIR | 7200 ± 50 – 9400 ± 50 | 7300-9100 | T>=90% | 6400-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7250~7850 | MWIR/LWIR transition | 7250 ± 100 – 7850 ± 100 | 7350-7750 | T>=80% | 3300-20000 nm; T < 1% | Germanium | 1, 2 |
| STO-WBP7350~8080 | MWIR/LWIR transition | 7350 ± 50 – 8080 ± 50 | 7510-7980 | T>=90% | 400-12000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP7400~8400 | MWIR/LWIR transition | 7400 ± 50 – 8400 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8430 | MWIR/LWIR transition | 7400 ± 70 – 8430 ± 70 | 7600-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8500 | MWIR/LWIR transition | 7400 ± 50 – 8500 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~9500 | LWIR | 7400 ± 50 – 9500 ± 50 | 7500-9400 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7450~10200 | LWIR | 7450 ± 50 – 10200 ± 50 | 7600-10000 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7450~13600 | LWIR | 7450 ± 50 – 13600 ± 100 | 7700-13300 | T>=75% | 2000-19000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7450~8500 | MWIR/LWIR transition | 7450 ± 50 – 8500 ± 50 | 7600-8100 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7450~9650 | LWIR | 7450 ± 50 – 9650 ± 50 | 7700-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7400~9900 | LWIR | 7460 ± 50 – 9960 ± 50 | 7660-9760 | T>=90% | 460-16060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7460~9630 | LWIR | 7460 ± 50 – 9630 ± 50 | 7550-9600 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 1 |
| STO-WBP7480~9380 | LWIR | 7480 ± 70 – 9380 ± 70 | 7700-9100 | T>=80% | 500-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP7500~7900 | MWIR/LWIR transition | 7500 ± 70 – 7900 ± 70 | 7600-7800 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~8400 | MWIR/LWIR transition | 7500 ± 50 – 8400 ± 50 | 7700-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8500 | LWIR | 7500 ± 50 – 8500 ± 50 | 7700-8200 | T>=85% | 200-16000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7500~8550 | LWIR | 7500 ± 50 – 8550 ± 50 | 7700-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8600 | LWIR | 7500 ± 50 – 8600 ± 50 | 7700-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~9300 | LWIR | 7500 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~9400 | LWIR | 7500 ± 50 – 9400 ± 50 | 8000-9000 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7550~13700 | LWIR | 7550 ± 50 – 13700 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7550~13950 | LWIR | 7550 ± 100 – 13950 ± 100 | 7750-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7550~8600 | LWIR | 7550 ± 70 – 8600 ± 70 | 7800-8300 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7550~9800 | LWIR | 7550 ± 50 – 9800 ± 50 | 7700-9550 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7575~7975 | MWIR/LWIR transition | 7575 ± 50 – 7975 ± 50 | 7675-7875 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10100 | LWIR | 7600 ± 70 – 10100 ± 100 | 7770-9900 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10160 | LWIR | 7600 ± 100 – 10160 ± 100 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8100 | MWIR/LWIR transition | 7600 ± 100 – 8100 ± 100 | 7700-8000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8600 | LWIR | 7600 ± 50 – 8600 ± 50 | 7800-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7600~9300 | LWIR | 7600 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9500 | LWIR | 7600 ± 50 – 9500 ± 50 | 8000-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9600 | LWIR | 7600 ± 50 – 9600 ± 50 | 7800-9300 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9700 | LWIR | 7600 ± 50 – 9700 ± 50 | 8000-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9730 | LWIR | 7600 ± 50 – 9730 ± 50 | 7800-9500 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9950 | LWIR | 7600 ± 50 – 9950 ± 50 | 7900-9600 | T>=85% | 6400-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7630~8070 | MWIR/LWIR transition | 7630 ± 70 – 8070 ± 70 | 7730-7970 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7650~10400 | LWIR | 7650 ± 50 – 10400 ± 50 | 7800-10250 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.38 |
| STO-WBP7650~13900 | LWIR | 7650 ± 50 – 13900 ± 100 | 7800-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7650~14100 | LWIR | 7650 ± 50 – 14100 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.4, 0.7, 1 |
| STO-WBP7650~8690 | LWIR | 7650 ± 70 – 8690 ± 70 | 7900-8400 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7650~9870 | LWIR | 7650 ± 50 – 9870 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~13500 | LWIR | 7700 ± 200 – 13500 ± 500 | 7900-13000 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7700~14250 | LWIR | 7700 ± 100 – 14250 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm | Germanium | 0.4, 1 |
| STO-WBP7700~8200 | MWIR/LWIR transition | 7700 ± 100 – 8200 ± 100 | 7810-8110 | T>=80% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7700~9400 | LWIR | 7700 ± 50 – 9400 ± 50 | 7850-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9600 | LWIR | 7700 ± 100 – 9600 ± 100 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9650 | LWIR | 7700 ± 50 – 9650 ± 50 | 8000-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9850 | LWIR | 7700 ± 100 – 9850 ± 100 | 7870-9570 | T>=85% | 1500-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP7700~9900 | LWIR | 7700 ± 50 – 9900 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9980 | LWIR | 7700 ± 50 – 9980 ± 50 | 8000-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7730~10250 | LWIR | 7730 ± 70 – 10250 ± 100 | 7900-10050 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7730~9950 | LWIR | 7730 ± 50 – 9950 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10000 | LWIR | 7750 ± 50 – 10000 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10050 | LWIR | 7750 ± 50 – 10050 ± 50 | 7700-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10100 | LWIR | 7750 ± 50 – 10100 ± 100 | 7700-10000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7750~10250 | LWIR | 7750 ± 50 – 10250 ± 50 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10300 | LWIR | 7750 ± 50 – 10300 ± 50 | 7900-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10500 | LWIR | 7750 ± 100 – 10500 ± 100 | 7950-10300 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9700 | LWIR | 7750 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9980 | LWIR | 7750 ± 50 – 9980 ± 50 | 8000-9700 | T>=80% | 1500-12000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7770~10580 | LWIR | 7770 ± 50 – 10580 ± 50 | 7950-10400 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9280 | LWIR | 7780 ± 100 – 9280 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9480 | LWIR | 7780 ± 100 – 9480 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10050 | LWIR | 7800 ± 50 – 10050 ± 50 | 8100-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10100 | LWIR | 7800 ± 50 – 10100 ± 50 | 7900-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10350 | LWIR | 7800 ± 70 – 10350 ± 100 | 7970-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10600 | LWIR | 7800 ± 100 – 10600 ± 100 | 8000-10400 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7800~12100 | LWIR | 7800 ± 100 – 12100 ± 100 | 8100-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7800~12200 | LWIR | 7800 ± 75 – 12200 ± 75 | 8100-11950 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP7800~14200 | LWIR | 7800 ± 100 – 14200 ± 100 | 8300-13500 | T>=85% | 1500-19000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP7800~9650 | LWIR | 7800 ± 50 – 9650 ± 50 | 8200-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7800~9700 | LWIR | 7800 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850-13650 | LWIR | 7850 ± 50 – 13650 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP7850~10450 | LWIR | 7850 ± 50 – 10450 ± 50 | 8000-10100 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10600 | LWIR | 7850 ± 50 – 10600 ± 50 | 8000-10350 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10650 | LWIR | 7850 ± 100 – 10650 ± 100 | 8050-10450 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~13750 | LWIR | 7850 ± 50 – 13750 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 0.5 |
| STO-WBP7850~13900 | LWIR | 7850 ± 100 – 13900 ± 400 | 8200-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7850~9650 | LWIR | 7850 ± 50 – 9650 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9700 | LWIR | 7850 ± 50 – 9700 ± 50 | 8300-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9750 | LWIR | 7850 ± 50 – 9750 ± 50 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9850 | LWIR | 7850 ± 50 – 9850 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10200 | LWIR | 7880 ± 100 – 10300 ± 100 | 8080-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7880~10400 | LWIR | 7880 ± 100 – 10400 ± 100 | 8100-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~12000 | LWIR | 7900 ± 100 – 12000 ± 100 | 8100-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP7900~12200 | LWIR | 7900 ± 100 – 12200 ± 100 | 8150-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~9800 | LWIR | 7900 ± 50 – 9800 ± 50 | 8300-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10350 | LWIR | 7920 ± 70 – 10350 ± 100 | 8090-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10500 | LWIR | 7920 ± 70 – 10500 ± 100 | 8090-10300 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10050 | LWIR | 7950 ± 50 – 10050 ± 50 | 8300-9700 | T>=92% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10400 | LWIR | 7950 ± 50 – 10400 ± 50 | 8500-10100 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7950~13850 | LWIR | 7950 ± 50 – 13850 ± 50 | 8300-13300 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 0.4 |
| STO-WBP7950~9850 | LWIR | 7950 ± 50 – 9850 ± 50 | 8200-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7980~9680 | LWIR | 7980 ± 100 – 9680 ± 100 | 8030-9530 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8000~10100 | LWIR | 8000 ± 100 – 10100 ± 100 | 8200-9900 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~10700 | LWIR | 8000 ± 200 – 10700 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8000~11300 | LWIR | 8000 ± 50 – 11300 ± 50 | 8300-11200 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~11400 | LWIR | 8000 ± 50 – 11400 ± 50 | 8300-11000 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~12000 | LWIR | 8000 ± 100 – 12000 ± 100 | 8200-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8000~12200 | LWIR | 8000 ± 100 – 12200 ± 100 | 8300-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP8000~12400 | LWIR | 8000 ± 100 – 12400 ± 100 | 8300-12000 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~13900 | LWIR | 8000 ± 50 – 13900 ± 50 | 8300-13600 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8050~13850 | LWIR | 8050 ± 50 – 13850 ± 50 | 8500-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8080~9880 | LWIR | 8080 ± 100 – 9880 ± 100 | 8500-9500 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8100~11700 | LWIR | 8100 ± 100 – 11700 ± 100 | 8400-11400 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~12800 | LWIR | 8100 ± 100 – 12800 ± 100 | 8300-12600 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~9000 | LWIR | 8100 ± 100 – 9000 ± 100 | 8250-8850 | T>=85% | 490-10090 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP8200-10100 | LWIR | 8200 ± 400 – 10100 ± 420 | 8800-9500 | T>=88% | 2000-12000 nm; T < 1% | Germanium | 0.5, 0.6 |
| STO-WBP8200-12000 | LWIR | 8200 ± 100 – 12000 ± 100 | 8400-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8200~10900 | LWIR | 8200 ± 200 – 10900 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8230~12400 | LWIR | 8230 ± 150 – 12400 ± 200 | 8800-11000 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8200~9000 | LWIR | 8240 ± 50 – 9140 ± 50 | 8340-9040 | T>=90% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300-8900 | LWIR | 8300 ± 100 – 8900 ± 100 | 8400-8700 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8300~13000 | LWIR | 8300 ± 160 – 13000 ± 160 | 8800-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8300~9200 | LWIR | 8300 ± 100 – 9200 ± 100 | 8430-9090 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300~9300 | LWIR | 8300 ± 100 – 9300 ± 100 | 8500-9100 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8400~13000 | LWIR | 8400 ± 150 – 13000 ± 150 | 8900-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8400~14700 | LWIR | 8400 ± 200 – 14700 ± 300 | 9000-13000 | T>=75% | 400-20000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8500-12250 | LWIR | 8500 ± 100 – 12250 ± 100 | 8700-12100 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8500-9050 | LWIR | 8500 ± 100 – 9050 ± 100 | 8650-8900 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8550-12350 | LWIR | 8550 ± 50 – 12350 ± 50 | 8700-12200 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.5 |
| STO-WBP8600-12500 | LWIR | 8600 ± 150 – 12500 ± 150 | 8980-12000 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP8700-9400 | LWIR | 8700 ± 100 – 9400 ± 100 | 8900-9300 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8770-9550 | LWIR | 8770 ± 50 – 9550 ± 50 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8800-9700 | LWIR | 8850 ± 50 – 9650 ± 50 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9500 | LWIR | 8900 ± 100 – 9500 ± 100 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9600 | LWIR | 8900 ± 100 – 9600 ± 100 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9700 | LWIR | 8900 ± 100 – 9700 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9800 | LWIR | 8900 ± 100 – 9800 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9000-9850 | LWIR | 9000 ± 100 – 9850 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9600-14800 | LWIR | 9600 ± 100 – 14800 ± 100 | 9900-14400 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP9800-15100 | LWIR | 9800 ± 100 – 15100 ± 100 | 11000-14700 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP10100-11100 | LWIR | 10100 ± 100 – 11100 ± 100 | 10350-10850 | T>=90% | 7600-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10160-11180 | LWIR | 10160 ± 50 – 11180 ± 50 | 10310-11030 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10200-11600 | LWIR | 10200 ± 100 – 11600 ± 100 | 10600-11300 | T>=85% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10240-10840 | LWIR | 10240 ± 50 – 10840 ± 50 | 10340-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10240-11260 | LWIR | 10240 ± 50 – 11260 ± 50 | 10400-11100 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10290-11490 | LWIR | 10290 ± 100 – 11490 ± 100 | 10490-11290 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10300-11400 | LWIR | 10300 ± 100 – 11400 ± 100 | 10500-11100 | T>=80% | 7000-14000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP10300-11500 | LWIR | 10300 ± 120 – 11500 ± 120 | 10800-11300 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10250-10850 | LWIR | 10340 ± 50 – 10940 ± 50 | 10440-10840 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-10840 | LWIR | 10340 ± 50 – 10840 ± 50 | 10440-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-11040 | LWIR | 10340 ± 50 – 11040 ± 50 | 10440-10940 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10360-10860 | LWIR | 10360 ± 50 – 10860 ± 50 | 10460-10760 | T>=90% | 1060-14060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10400-11300 | LWIR | 10400 ± 100 – 11300 ± 100 | 10700-11100 | T>=90% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10440-11040 | LWIR | 10440 ± 50 – 11040 ± 50 | 10600-10900 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10540-11140 | LWIR | 10540 ± 50 – 11140 ± 50 | 10700-11000 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10600-11450 | LWIR | 10600 ± 100 – 11450 ± 100 | 10700-11350 | T>=85% | 7500-14000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP10600-11800 | LWIR | 10600 ± 100 – 11800 ± 100 | 10980-11750 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11300-15600 | LWIR | 11300 ± 100 – 15600 ± 100 | 11500-15000 | T>=70% | 10080-16080 nm; T < 1% | Wedge germanium | 2 |
| STO-WBP11400-12380 | LWIR | 11400 ± 60 – 12380 ± 60 | 11550-12230 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11400-12600 | LWIR | 11490 ± 100 – 12690 ± 100 | 12000-12490 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11500-12500 | LWIR | 11500 ± 50 – 12500 ± 50 | 11650-12350 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11570-12570 | LWIR | 11570 ± 50 – 12570 ± 50 | 11770-12370 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
Các mẫu longpass bổ sung để truyền năng lượng hồng ngoại bước sóng dài hơn trong khi chặn bước sóng ngắn hơn.
| Mẫu | Vùng phổ | Cut-On (nm) | Độ truyền qua | Dải truyền qua (nm) | Chặn sáng | Đế nền | Độ dày đế (mm) |
|---|---|---|---|---|---|---|---|
| STO-LP1500 | SWIR | 1500 ± 100 | T>=85% | 1600-5300 | 400-1400 nm; T < 1% | Sapphire | 0.3 |
| STO-LP1700 | SWIR | 1700 ± 100 | T>=80% | 1750-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP1800 | SWIR | 1800 ± 50 | T>=80% | 1850-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP2200 | SWIR | 2200 ± 100 | T>=90% | 2700-3500 | 400-1800 nm; T < 1% | Silicon | 0.762 |
| STO-LP2250 | SWIR | 2250 ± 50 | T>=90% | 2400-3600 | 1500-2100 nm; T < 1% | Silicon | 1 |
| STO-LP2900 | MWIR | 2900 ± 50 | T>=90% | 3050-5100 | 1300-2600 nm; T < 1% | Zinc selenide | 0.5 |
| CUT3200 | MWIR | 3400 ± 10 | T>=90% | 3480-5350 | 1500-3266 nm; T < 1% | Germanium | 0.3 |
| CUT3500 | MWIR | 3670 ± 50 | T>=90% | 3800-5600 | 1500-3500 nm; T < 1% | Germanium | 1, 2.5 |
| STO-LP3710+DLC | MWIR | 3710 ± 50 | T>=70% | 4000-5500 | 1500-3400 nm; T < 1% | Silicon | 0.5 |
| STO-LP3730 | MWIR | 3730 ± 50 | T>=90% | 4400-4900 | 1700-3700反射; T < 1% | Germanium | 0.5, 0.7 |
| STO-LP3760 | MWIR | 3760 ± 60 | T>=90% | 3960-4800 | 1600-3480 nm; T < 1% | Germanium | 0.5 |
| STO-LP3850 | MWIR | 3850 ± 50 | T>=90% | 4000-5000 | 1500-3500 nm; T < 1% | Germanium | 0.5 |
| STO-LP4730 | MWIR | 4730 ± 200 | T>=80% | 4900-5150 | 400-4200 nm; T < 1% | Sapphire | 1 |
| STO-LP5800 | MWIR/LWIR transition | 5800 ± 150 | T>=80% | 6000-13000 | 2000-5500 nm; T < 1% | Silicon | 0.5 |
| STO-LP6200 | MWIR/LWIR transition | 6200 ± 100 | T>=90% | 6400-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3, 3.5 |
| STO-LP6300 | MWIR/LWIR transition | 6300 ± 100 | T>=90% | 6550-14500 | 1500-6100 nm; T < 1% | Germanium | 0.3 |
| STO-LP6400 | MWIR/LWIR transition | 6400 ± 100 | T>=90% | 6500-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3 |
| STO-LP6500 | MWIR/LWIR transition | 6500 ± 50 | T>=85% | 6800-11000 | 1500-6200 nm; T < 1% | Germanium | 0.9, 2.8, 3 |
| STO-LP7250 | MWIR/LWIR transition | 7250 ± 50 | T>=90% | 7450-11000 | 1400-7000 nm; T < 1% | Germanium | 2.5 |
| STO-LP7570 | MWIR/LWIR transition | 7570 ± 70 | T>=90% | 7770-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7675 | MWIR/LWIR transition | 7675 ± 75 | T>=90% | 8000-14000 | 1500-7550 nm; T < 1% | Germanium | 0.3 |
| STO-LP7770 | MWIR/LWIR transition | 7770 ± 70 | T>=90% | 7870-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7950 | MWIR/LWIR transition | 7950 ± 150 | T>=85% | 8050-14000 | 190-7800 nm; T < 1% | Germanium | 1 |
| STO-LP9000 | LWIR | 9000 ± 300 | T>=90% | 9500-12500 | 400-8500 nm; T < 1% | Germanium | 0.5 |
| STO-LP10000 | LWIR | 10000 ± 70 | T>=90% | 10150-14300 | 1500-9800 nm; T < 1% | Zinc selenide | 0.5 |
| STO-LP10015 | LWIR | 10015 ± 100 | T>=85% | 10450-14500 | 1500-9800 nm; T < 1% | Germanium | 0.3 |
| STO-LP10600 | LWIR | 10600 ± 100 | T>=80% | 11000-14000 | 1500-10000 nm; T < 1% | Germanium | 2.7 |
| STO-LP10900 | LWIR | 10900 ± 100 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 1 |
| STO-LP11050 | LWIR | 11050 ± 50 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 0.8, 0.9 |
| STO-LP11190 | LWIR | 11190 ± 100 | T>=80% | 11500-15700 | 1500-10750 nm; T < 1% | Germanium | 0.8, 1 |
| STO-LP11600 | LWIR | 11600 ± 100 | T>=85% | 11800-12200 | 7000-11200 nm; T < 1% | Germanium | 0.9 |
| STO-LP11700 | LWIR | 11700 ± 100 | T>=80% | 11900-12300 | 7000-11200 nm; T < 1% | Germanium | 0.8, 0.9, 1, 2.7 |
Các dải lớp phủ chống phản xạ hồng ngoại bổ sung. Kích thước và chi tiết vật liệu chỉ là dữ liệu tham khảo ở giai đoạn báo giá nếu chưa được xác nhận trong nguồn.
| Mẫu | Vùng phổ | Dải truyền qua (nm) | Độ truyền qua trung bình | Độ dày đế (mm) |
|---|---|---|---|---|
| STO-AR1000~2600 | SWIR | 1000-2600 | T>=90% | 1, 1.6, 6 |
| STO-AR1000~5100 | MWIR | 1000-5100 | T>=80% | 0.5, 1 |
| STO-AR1200~5500 | MWIR | 1200-5500 | T>=85% | 0.5 |
| STO-AR1250-1650 | SWIR | 1250-1650 | T>=99% | 0.3 |
| STO-AR1500~1600 | SWIR | 1500-1600 | T>=97% | 0.3, 1 |
| STO-AR1580~6900 | MWIR | 1580-6900 | T>=85% | 0.5, 1 |
| STO-AR1600~5300 | MWIR | 1600-5300 | T>=90% | 0.5, 1 |
| STO-AR1800~10000 | MWIR/LWIR transition | 1800-10000 | T>=90% | 1.2 |
| STO-AR1800~6000 | MWIR | 1500-5000 | T>=95% | 0.5 |
| STO-AR2000~12000 | MWIR/LWIR transition | 2000-12000 | T>=85% | 0.5 |
| STO-AR2000~14000 | LWIR | 2000-14000 | T>=80% | 0.5 |
| STO-AR2000~5600 | MWIR | 2000-5600 | T>=85% | 0.3, 1 |
| STO-AR2000~6000 | MWIR | 2000-6000 | T>=90% | 1, 5 |
| STO-AR2100~5500 | MWIR | 2100-5500 | T>=90% | 0.9, 1 |
| STO-AR2300~12600 | MWIR/LWIR transition | 2300-12600 | T>=90% | 1, 1.6 |
| STO-AR2300~5500 | MWIR | 2300-5500 | T>=92% | 1 |
| STO-AR2400~14000 | LWIR | 2400-14000 | T>=80% | 0.8, 2 |
| STO-AR2500~12000 | MWIR/LWIR transition | 2500-12000 | T>=90% | 1, 1.6 |
| STO-AR2500~12600 | MWIR/LWIR transition | 2500-12600 | T>=90% | 1.6 |
| STO-AR2500~14000 | LWIR | 2500-14000 | T>=85% | 0.5 |
| STO-AR2500~3300 | MWIR | 2500-3300 | T>=90% | 0.65, 1, 3 |
| STO-AR2500~4600 | MWIR | 2500-4600 | T>=90% | 0.5 |
| STO-AR2500~4700 | MWIR | 2500-4700 | T>=90% | 0.7, 0.8, 2.9, 12 |
| STO-AR2500~6000 | MWIR | 2500-6000 | T>=85% | 0.5 |
| STO-AR2600~5200 | MWIR | 2600-5200 | T>=90% | 0.5, 4 |
| STO-AR2680~4520 | MWIR | 2680-4520 | T>=90% | 0.5, 2.8, 3 |
| STO-AR2700~5300 | MWIR | 2700-5300 | T>=95% | 0.5 |
| STO-AR2700~9100 | MWIR/LWIR transition | 2700-9100 | T>=90% | 0.5, 5 |
| STO-AR2800~4900 | MWIR | 2800-4900 | T>=90% | 0.9 |
| STO-AR2800~5500 | MWIR | 2800-5500 | T>=90% | 0.5 |
| STO-AR2850~4850 | MWIR | 2850-4850 | T>=90% | 0.5 |
| STO-AR2900~5400 | MWIR | 2900-5400 | T>=90% | 6 |
| STO-AR3000~11000 | MWIR/LWIR transition | 3000-11000 | T>=90% | 0.38, 1.6 |
| STO-AR3000~12600 | MWIR/LWIR transition | 3000-12600 | T>=90% | 0.4, 0.9, 1.6 |
| STO-AR3000~14000 | LWIR | 3000-14000 | T>=90% | 0.3, 0.6, 0.7, 0.75, 0.8, 0.9, 1 |
| STO-AR3100~3600 | MWIR | 3100-3600 | T>=90% | 1 |
| STO-AR3200~3600 | MWIR | 3200-3600 | T>=85% | 0.45, 0.9 |
| STO-AR3200~5500 | MWIR | 3200-5500 | T>=85% | 0.9, 1 |
| STO-AR3400~12500 | MWIR/LWIR transition | 3400-12500 | T>=90% | 1 |
| STO-AR3500~10000 | MWIR/LWIR transition | 3500-10000 | T>=90% | 0.5, 1 |
| STO-AR3500~5000 | MWIR | 3500-5000 | T>=95% | 0.5, 1, 1.6 |
| STO-AR3600~4800 | MWIR | 3600-4800 | T>=95% | 0.5, 1 |
| STO-AR3600~5000 | MWIR | 3600-5000 | T>=95% | 0.5 |
| STO-AR3700~4800 | MWIR | 3700-4800 | T>=90% | 0.5, 1 |
| STO-AR3700~5000 | MWIR | 3700-5000 | T>=95% | 0.9 |
| STO-AR400~1700 | NIR | 400-1700 | T>=90% | 0.85, 1 |
| STO-AR400~3000 | SWIR | 400-3000 | T>=85% | 1.5 |
| STO-AR400~880 | NIR | 400-880 | T>=90% | 0.5 |
| STO-AR420~780 | NIR | 420-780 | T>=90% | 1 |
| STO-AR4300 | IR | 4300 | T>=90% | 1 |
| STO-AR4500~13000 | LWIR | 4500-13000 | T>=90% | 0.8, 1 |
| STO-AR5500~11000 | LWIR | 5500-11000 | T>=90% | 0.8, 2.5 |
| STO-AR5500~14000 | LWIR | 5500-14000 | T>=80% | 0.5 |
| STO-AR6000~10500 | LWIR | 6000-10500 | T>=90% | 0.9, 1 |
| STO-AR6000~11000 | LWIR | 6000-11000 | T>=90% | 2.5 |
| STO-AR6000~13000 | LWIR | 6000-13000 | T>=90% | 1 |
| STO-AR6000~18000 | LWIR | 6000-18000 | T>=48% | 0.8, 1 |
| STO-AR6200~12600 | LWIR | 6200-12600 | T>=90% | 0.5, 0.6, 0.9, 3, 6 |
| STO-AR6500~11000 | LWIR | 6500-11000 | T>=95% | 1 |
| STO-AR7000~12500 | LWIR | 7000-12500 | T>=95% | 0.4, 2.5, 2.8 |
| STO-AR7000~12600 | LWIR | 7000-12600 | T>=90% | 0.7, 0.9, 1, 3 |
| STO-AR7000~14000 | LWIR | 7000-14000 | T>=90% | 1 |
| STO-AR7000~14500 | LWIR | 7000-14500 | T>=90% | 0.8, 1 |
| STO-AR7000~14600 | LWIR | 7000-14600 | T>=90% | 0.9, 1, 3 |
| STO-AR7000~16000 | LWIR | 7000-16000 | T>=90% | 0.8, 0.9, 1, 3.5 |
| STO-AR7400~10700 | LWIR | 7400-10700 | T>=95% | 2.6, 3 |
| STO-AR7400~10900 | LWIR | 7400-10900 | T>=94% | 0.8, 2.9 |
| STO-AR7400~12800 | LWIR | 7400-12800 | T>=90% | 0.9, 1 |
| STO-AR7500~10100 | LWIR | 7500-10100 | T>=90% | 0.7, 0.9, 1, 2.9, 8.7 |
| STO-AR7500~10500 | LWIR | 7500-10500 | T>=93% | 0.7, 1 |
| STO-AR7500~10700 | LWIR | 7500-10700 | T>=90% | 1 |
| STO-AR7500~11000 | LWIR | 7500-11000 | T>=90% | 2.5, 2.8 |
| STO-AR7500~13000 | LWIR | 7500-13000 | T>=90% | 0.9, 5 |
| STO-AR7500~13500 | LWIR | 7500-13500 | T>=90% | 0.8 |
| STO-AR7500~9700 | LWIR | 7500-9700 | T>=85% | 0.75 |
| STO-AR7600~12700 | LWIR | 7600-12700 | T>=93% | 1 |
| STO-AR7700~11000 | LWIR | 7700-11000 | T>=95% | 0.9, 3 |
| STO-AR7700~9300 | LWIR | 7700-9300 | T>=93% | 0.3, 0.75 |
| STO-AR7800~10000 | LWIR | 7800-10000 | T>=95% | 0.9, 1 |
| STO-AR8000~10000 | LWIR | 8000-10000 | T>=92% | 0.9, 2.7, 2.8, 3 |
| STO-AR8000~13500 | LWIR | 8000-13500 | T>=90% | 3 |
| STO-AR8000~15000 | LWIR | 8000-15000 | T>=93% | 2 |
| STO-AR800~4000 | SWIR | 800-4000 | T>=80% | 1 |
| STO-AR9000~16500 | LWIR | 9000-16500 | T>=90% | 1.6 |
| STO-AR900~1700 | SWIR | 900-1700 | T>=90% | 1.6 |
| STO-AR9500~17000 | LWIR | 9500-17000 | T>=80% | 0.7, 1.6 |
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
Material choice can limit usable wavelength range before coating performance is considered. Confirm substrate first for IR applications.
For thermal or gas-sensing work, specify the target absorption band, blocking range, and operating environment.
Bao phủ yêu cầu bộ lọc cận hồng ngoại・hồng ngoại sóng ngắn・hồng ngoại sóng trung・hồng ngoại sóng dài khi có dữ liệu.
Vật liệu nền khác nhau có dải truyền qua khác nhau, cần chọn vật liệu hỗ trợ dải bước sóng hồng ngoại mục tiêu.
Có. Dải bước sóng・kích thước・lựa chọn vật liệu nền・coating tùy chỉnh có thể được tư vấn cho hệ thống hồng ngoại.
Quality & Compliance
For OEM programs, laboratory instruments, and industrial systems, OPTOStokes keeps quality, material compliance, and engineering support visible from the start of supplier evaluation.
Process control, inspection records, and repeatable coating workflows for production optical components.
Compliance documentation can be prepared for qualified projects and regulated supply chains.
Wavelength, FWHM, substrate, AOI, size, and mounting requirements can be reviewed with engineering.
Share target wavelength, blocking level, transmittance, and drawing requirements for a focused quote.
Our engineers will help you select the perfect optical solution.