NIR・SWIR・MWIR・LWIRは異なる設計領域
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
OPTOStokes は Optofilters.com の光学フィルターブランドです。UV、VIS、NIR、IR 用の在庫品とカスタムコーティングフィルターを提供しています。
近赤外・短波長赤外・中波長赤外・長波長赤外システム向け赤外線フィルターを確認。中赤外バンドパス・遠赤外フィルター・シリコン赤外フィルター・サファイア赤外フィルター・ゲルマニウム AR コーティングウィンドウ・メタライズド赤外ウィンドウをセンシング・イメージング機器向けに比較してください。
まず赤外領域で選択し、検出器感度・基板透過率・コーティング帯域・環境暴露・取り付け要件を確認してください。赤外フィルターは可視フィルターとは異なる素材選択が必要な場合が多いです。
OPTOStokes 赤外線フィルターは、近赤外(750〜1100nm)・短波長赤外(SWIR 1.1〜2.5µm)・中波長赤外(MWIR 3〜5µm)・長波長赤外(LWIR 8〜14µm)用途をカバーします。カタログには中/遠赤外狭帯域バンドパス・広帯域バンドパス・赤外ロングパスフィルター・AR コーティング・メタライズド赤外ウィンドウも含まれ、サーマルイメージング・ガスセンシング・分光・検出器パッケージングに対応します。
| モデル | 中心波長 (nm) | 透過率 | 半値全幅 (nm) | 遮光密度 |
|---|---|---|---|---|
| STO-BP680 | 680 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1100 nm |
| STO-BP1120 | 1120 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1150 | 1150 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1173 | 1173 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 300-1200 nm |
| STO-BP1250 | 1250 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 700-1800 nm |
| STO-BP1285 | 1285 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1000-1700 nm |
| STO-BP1455 | 1455 ± 2 | T≥50% | 10-20 | OD ≥ 3 at 1200-1800 nm |
| STO-BP1535 | 1535 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1545 | 1545 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1550 | 1550 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1555 | 1555 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 600-2000 nm |
| STO-BP1570 | 1570 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1250-1700 nm |
| STO-BP1615 | 1615 ± 2 | T≥90% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1620 | 1620 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1625 | 1625 ± 2 | T≥70% | 10-20 | OD ≥ 3 at 1450-1900 nm |
| STO-BP1655 | 1655 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1660 | 1660 ± 5 | T≥70% | 10-20 | OD ≥ 3 at 1350-2200 nm |
| STO-BP1680 | 1680 ± 10 | T≥90% | 10-20 | OD ≥ 3 at 800-3000 nm |
| STO-BP1685 | 1685 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1695 | 1695 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 1550-2000 nm |
| STO-BP1935 | 1935 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1940 | 1940 ± 2 | T≥60% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2050 | 2050 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2180 | 2180 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2230 | 2230 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2270 | 2270 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP2340 | 2340 ± 2 | T≥80% | 10-20 | OD ≥ 3 at 800-2000 nm |
| STO-BP1100 | 1100 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1120 | 1120 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1125 | 1125 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1150 | 1150 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1173 | 1173 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1200 | 1200 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1235 | 1235 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1245 | 1245 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1250 | 1250 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1290 | 1290 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1300 | 1300 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1320 | 1320 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1340 | 1340 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1380 | 1380 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1430 | 1430 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1445 | 1445 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1450 | 1450 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1530 | 1530 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1535 | 1535 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1540 | 1540 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1550 | 1550 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1570 | 1570 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1575 | 1575 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1600 | 1600 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1610 | 1610 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1630 | 1630 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 350-1700 nm |
| STO-BP1650 | 1650 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1654 | 1654 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 350-1700 nm |
| STO-BP1660 | 1660 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1680 | 1680 ± 5 | T≥90% | 20-60 | OD ≥ 3 at 800-3000 nm |
| STO-BP1700 | 1700 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1714 | 1714 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1716 | 1716 ± 5 | T≥90% | 90-100 | OD ≥ 3 at 800-2000 nm |
| STO-BP1780 | 1780 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1800 | 1800 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1810 | 1810 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1818 | 1818 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1830 | 1830 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1920 | 1920 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1930 | 1930 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1935 | 1935 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1940 | 1940 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1945 | 1945 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| STO-BP1950 | 1950 ± 5 | T≥90% | 40-70 | OD ≥ 3 at 200-3000 nm |
| モデル | カットオン (nm) | 透過率 | 透過範囲 (nm) | 遮光密度 |
|---|---|---|---|---|
| STO-LP900 | 900 ± 5 | T≥90% | 910-1100 | OD ≥ 3 at 350-880 nm |
| STO-LP910 | 910 ± 5 | T≥90% | 920-1100 | OD ≥ 3 at 350-890 nm |
| STO-LP920 | 920 ± 5 | T≥90% | 930-1100 | OD ≥ 3 at 350-900 nm |
| STO-LP920 | 920 ± 10 | T≥90% | 940-1700 | OD ≥ 3 at 350-890 nm |
| STO-LP930 | 930 ± 5 | T≥90% | 940-1100 | OD ≥ 3 at 350-910 nm |
| STO-LP940 | 940 ± 5 | T≥90% | 950-1100 | OD ≥ 3 at 350-920 nm |
| STO-LP950 | 950 ± 5 | T≥90% | 970-1100 | OD ≥ 3 at 350-930 nm |
| STO-LP970 | 970 ± 5 | T≥90% | 980-1100 | OD ≥ 3 at 350-940 nm |
| STO-LP1000 | 1000 ± 10 | T≥90% | 1020-2000 | OD ≥ 3 at 350-970 nm |
| STO-LP1010 | 1010 ± 10 | T≥90% | 1030-1200 | OD ≥ 3 at 350-990 nm |
| STO-LP1060 | 1060 ± 10 | T≥88% | 1085-1100 | OD ≥ 3 at 350-1035 nm |
| STO-LP1150 | 1150 ± 10 | T≥90% | 1180-1700 | OD ≥ 3 at 700-1120 nm |
| STO-LP1170 | 1170 ± 10 | T≥90% | 1200-1700 | OD ≥ 3 at 700-1135 nm |
| STO-LP1200 | 1200 ± 10 | T≥90% | 1230-1800 | OD ≥ 3 at 350-1175 nm |
| STO-LP1250 | 1250 ± 10 | T≥90% | 1260-1750 | OD ≥ 3 at 350-1215 nm |
| STO-LP1270 | 1270 ± 10 | T≥90% | 1300-1800 | OD ≥ 3 at 350-1240 nm |
| STO-LP1380 | 1380 ± 10 | T≥90% | 1400-2150 | OD ≥ 3 at 700-1360 nm |
| STO-LP1400 | 1400 ± 10 | T≥90% | 1420-1100 | OD ≥ 3 at 350-1380 nm |
| STO-LP1450 | 1450 ± 10 | T≥90% | 1480-1800 | OD ≥ 3 at 350-1420 nm |
| STO-LP1470 | 1470 ± 10 | T≥90% | 1500-1800 | OD ≥ 3 at 350-1400 nm |
| STO-LP1600 | 1600 ± 10 | T≥90% | 1625-2300 | OD ≥ 3 at 350-1540 nm |
中・遠赤外狭帯域バンドパスフィルターは、MWIR・LWIR 機器帯域向けにシリコン・サファイア・ゲルマニウム・フッ化カルシウム・セレン化亜鉛基板を使用します。検出器モジュール・サーマルセンシングシステム向けカスタムサイズも対応可能です。
| モデル | IR 領域 | 中心波長 (nm) | 半値全幅 (nm) | ピーク透過率 | 遮光 | 基板 | サイズ |
|---|---|---|---|---|---|---|---|
| STO-NBP 2750 500nm | MWIR | 2750 ± 50 | 500 ± 60 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2775 250nm | MWIR | 2775 ± 30 | 250 ± 20 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 2850 400nm | MWIR | 2850 ± 40 | 400 ± 30 | >=80% | 400-7000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3040 140nm | MWIR | 3040 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3060 140nm | MWIR | 3060 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3080 140nm | MWIR | 3080 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3090 140nm | MWIR | 3090 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3280 160nm | MWIR | 3280 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3300 160nm | MWIR | 3300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3310 60nm | MWIR | 3310 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 60nm | MWIR | 3330 ± 10 | 60 ± 20 | >=80% | 400-4700nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3330 160nm | MWIR | 3330 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3375 160nm | MWIR | 3375 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 3400 120nm | MWIR | 3400 ± 30 | 120 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3400 180nm | MWIR | 3400 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3420 180nm | MWIR | 3420 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3440 120nm | MWIR | 3440 ± 30 | 120 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 3440 160nm | MWIR | 3440 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3460 150nm | MWIR | 3460 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3800 300nm | MWIR | 3800 ± 40 | 300 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3900 90nm | MWIR | 3900 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3920 90nm | MWIR | 3920 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 3950 90nm | MWIR | 3950 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 3970 90nm | MWIR | 3970 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4000 90nm | MWIR | 4000 ± 20 | 90 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4050 180nm | MWIR | 4050 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4100 180nm | MWIR | 4100 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4200 180nm | MWIR | 4200 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4230 160nm | MWIR | 4230 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 2.9 x 2.9 x 0.5mm |
| STO-NBP 4260 180nm | MWIR | 4260 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | 3.3 x 3.3 x 0.5mm |
| STO-NBP 4280 180nm | MWIR | 4280 ± 20 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 130nm | MWIR | 4300 ± 30 | 130 ± 20 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4300 160nm | MWIR | 4300 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4300 180nm | MWIR | 4300 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4320 160nm | MWIR | 4320 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4330 130nm | MWIR | 4330 ± 30 | 130 ± 20 | >=80% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4330 180nm | MWIR | 4330 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4360 180nm | MWIR | 4360 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4380 180nm | MWIR | 4380 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4420 60nm | MWIR | 4420 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4430 60nm | MWIR | 4430 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 60nm | MWIR | 4450 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4450 200nm | MWIR | 4450 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4480 60nm | MWIR | 4480 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 60nm | MWIR | 4500 ± 10 | 60 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 140nm | MWIR | 4500 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4500 200nm | MWIR | 4500 ± 30 | 200 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4520 140nm | MWIR | 4520 ± 30 | 140 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.6mm |
| STO-NBP 4560 160nm | MWIR | 4560 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4600 160nm | MWIR | 4600 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4640 160nm | MWIR | 4640 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4650 160nm | MWIR | 4650 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4680 150nm | MWIR | 4680 ± 30 | 150 ± 20 | >=80% | 400-25000nm,T ≤ 1% | Sapphire | Dia. 25 x 0.8mm |
| STO-NBP 4690 160nm | MWIR | 4690 ± 30 | 160 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4750 180nm | MWIR | 4750 ± 30 | 180 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 4770 150nm | MWIR | 4770 ± 30 | 150 ± 20 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 5300 600nm | MWIR/LWIR transition | 5300 ± 40 | 600 ± 30 | >=80% | 400-11000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7300 300nm | MWIR/LWIR transition | 7300 ± 40 | 300 ± 30 | >=70% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
| STO-NBP 7350 200nm | MWIR/LWIR transition | 7350 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7410 200nm | MWIR/LWIR transition | 7410 ± 30 | 200 ± 30 | >=65% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7470 200nm | MWIR/LWIR transition | 7470 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7625 200nm | MWIR/LWIR transition | 7625 ± 30 | 200 ± 30 | >=75% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 7650 200nm | MWIR/LWIR transition | 7650 ± 30 | 200 ± 30 | >=60% | 400-12000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 8420 200nm | LWIR | 8420 ± 40 | 200 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 9020 180nm | LWIR | 9020 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9080 180nm | LWIR | 9080 ± 30 | 180 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Float-zone silicon | Dia. 100 x 0.5mm |
| STO-NBP 9900 370nm | LWIR | 9900 ± 30 | 370 ± 20 | >=70% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10000 370nm | LWIR | 10000 ± 40 | 370 ± 30 | >=75% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10050 370nm | LWIR | 10050 ± 40 | 370 ± 30 | >=60% | 400-16000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10270 600nm | LWIR | 10270 ± 40 | 600 ± 30 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10460 370nm | LWIR | 10460 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10500 600nm | LWIR | 10500 ± 50 | 600 ± 40 | >=75% | 400-13500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10560 370nm | LWIR | 10560 ± 40 | 370 ± 30 | >=75% | 400-18000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 10700 370nm | LWIR | 10700 ± 40 | 370 ± 30 | >=75% | 400-14000nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11500 600nm | LWIR | 11500 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 11700 600nm | LWIR | 11700 ± 50 | 600 ± 40 | >=65% | 400-14500nm,T ≤ 1% | Monocrystalline silicon | Dia. 100 x 0.5mm |
| STO-NBP 14500 1000nm | LWIR | 14500 ± 50 | 1000 ± 50 | >=70% | 400-19000nm,T ≤ 1% | Monocrystalline silicon | Dia. 25 x 0.5mm |
広帯域赤外バンドパスフィルターは、MWIR・LWIR のより広い透過ウィンドウを帯外遮光とともに提供し、サーマルイメージング・ガス分析・赤外センシングに対応します。
| モデル | IR 領域 | 透過範囲 (nm) | 平均透過率 | 遮光 | サイズ | 基板 |
|---|---|---|---|---|---|---|
| STO-WBP 3100-3800nm Filter | MWIR | 3100-3800nm | >=85% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 3250-3500nm Filter | MWIR | 3250-3500nm | >=88% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3550-4150nm Filter | MWIR | 3550-4150nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 3670-4970nm Filter | MWIR | 3670-4970nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4500-5000nm Filter | MWIR | 4500-5000nm | >=90% | 400-6000nm, < =1% | Custom | Germanium |
| STO-WBP 4750-5400nm Filter | MWIR/LWIR transition | 4750-5400nm | >=80% | 400-25000nm, < =1% | Custom | Sapphire |
| STO-WBP 8000-14000nm Filter | LWIR | 8000-14000nm | >75% | 0.4-7.5um, 15-21.5um, < =1% | Custom | Monocrystalline silicon |
| STO-WBP 8000-9450nm Filter | LWIR | 8000-9450nm | >=92% | 400-12000nm, < =1% | Custom | Germanium |
赤外ロングパスフィルターは長波長領域を透過し、短波長エネルギーを遮光して検出器側の分離とサーマルイメージング経路に対応します。
| モデル | IR 領域 | 透過範囲 (nm) | 平均透過率 | 遮光 | サイズ | 基板 |
|---|---|---|---|---|---|---|
| STOLWP 3000-5000nm Filter | MWIR | 3000-5000nm | >85% | 400-2900nm, < =1% | Custom | Sapphire |
| STOLWP 5500-14000nm | LWIR | 5500-14000nm | >80% | 400-5000nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7000-14000nm Filter | LWIR | 7000-14000nm | >80% | 400-6500nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 7700-9000nm Filter | LWIR | 7700-9000nm | >80% | 400-7600nm, < =1% | Custom | Monocrystalline silicon |
| STOLWP 8000-12000nm Filter | LWIR | 8000-12000nm | >85% | 400-7500nm, < =1% | Custom | Germanium |
赤外反射防止コーティングは表面反射を低減し、シリコン・サファイア・ゲルマニウム光学素子のシステムスループットを向上させます。
| コーティング | IR 領域 | 透過範囲 (nm) | 平均透過率 | サイズ | 基板 |
|---|---|---|---|---|---|
| 0.8-5µm AR | MWIR | 0.8-5um | >=86% | Custom | Sapphire |
| 2.9-14.5µm AR | LWIR | 2.9-14.5um | >=73% | Custom | Germanium |
| 3-5µm AR | MWIR | 3-5um | >=90% | Custom | Monocrystalline silicon |
| 7-12µm AR | LWIR | 7-12um | >=88% | Custom | Monocrystalline silicon |
| 8-12µm AR+DLC | LWIR | 8-12um | >=75% | Custom | Monocrystalline silicon |
| 8-14µm AR | LWIR | 8-14um | >=83% | Custom | Monocrystalline silicon |
メタライズド赤外ウィンドウは、検出器・イメージングアセンブリでの半田付けや気密封止用にコーティングされた光学開口とメタライズドエッジを使用します。
| Specification | IR 領域 | 有効径 | メタライズ領域 | スペクトル仕様 | 基板 | 外形サイズ |
|---|---|---|---|---|---|---|
| 16 x 16 x 0.8mm | MWIR | 13.2 x 13.2 | ≥13.7 x 13.7 | 3-5um, Tavg≥96% | Germanium | 16 x 16 |
| Dia. 12 x 1mm | MWIR | Dia. 10 | ≥Dia. 10.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 12 |
| Dia. 18 x 1mm | MWIR | Dia. 14 | ≥Dia. 14.5 | 3-5um, Tavg≥96% | Monocrystalline silicon | Dia. 18 |
| Dia. 30 x 1mm | MWIR | Dia. 26 | ≥Dia. 26.5 | 3-5um, Tavg≥96% | Sapphire | Dia. 30 |
| 10 x 10 x 1mm | LWIR | 8.5 x 8.5 x 0.9 | ≥8.9 x 8.9 | 8-12um, Tavg≥82% | Monocrystalline silicon | 10 x 10 x 1 |
| Dia. 2.5 x 0.28mm | SWIR | Dia. 1.6 | ≥Dia. 1.8 | 1250-1650nm, Tavg>99% | Sapphire | Dia. 2.5 |
FWHM が 10 nm 以下の IR バンドパス追加モデルです。概要では光学選定項目を表示し、物理寸法は見積り確認用に残しています。
| モデル | スペクトル領域 | 帯域幅クラス | CWL (nm) | FWHM (nm) | 透過率 | 遮光 | 基板 | 基板厚さ (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP2475±5 | SWIR | ultra-narrow | 2475 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
| STO-BP2490±5 | SWIR | ultra-narrow | 2490 ± 5 | 10 ± 5 | T>=60% | 600-3000 nm; T < 1% | Borosilicate glass | 2 |
FWHM が 10 nm を超え 20 nm 以下の IR バンドパス追加モデルです。波長と帯域幅を素早く選べるように分類しています。
| モデル | スペクトル領域 | 帯域幅クラス | CWL (nm) | FWHM (nm) | 透過率 | 遮光 | 基板 | 基板厚さ (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP1440±20 | SWIR | narrow | 1440 ± 5 | 20 ± 10 | T>=70% | 400-2200 nm; T < 1% | White glass | 3 |
| STO-BP1645±5 | SWIR | narrow | 1645 ± 5 | 20 ± 5 | T>=90% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1663±5 | SWIR | narrow | 1663 ± 5 | 20 ± 5 | T>=80% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1697 | SWIR | narrow | 1697 ± 2 | 15 ± 2 | T>=85% | 800-2000 nm; T < 1% | Borosilicate glass | 0.5 |
| STO-BP1745±15 | SWIR | narrow | 1740 ± 5 | 20 ± 5 | T=55-65% | 400-2200 nm; T < 1.5% | White glass | 3 |
FWHM が 20 nm を超える、より広いスペクトル選定向けの IR バンドパス追加モデルです。
| モデル | スペクトル領域 | 帯域幅クラス | CWL (nm) | FWHM (nm) | 透過率 | 遮光 | 基板 | 基板厚さ (mm) |
|---|---|---|---|---|---|---|---|---|
| STO-BP900±30 | NIR | standard | 900 ± 30 | 70 ± 30 | T>=90% | 650-1250 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1380±30 | SWIR | standard | 1380 ± 30 | 70 ± 30 | T>=85% | 500-2000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP1600±16 | SWIR | standard | 1600 ± 16 | 150 ± 20 | T>=80% | 400-3000 nm; T < 1% | Corning 7980 | 2 |
| STO-BP1900±20 | SWIR | standard | 1900 ± 20 | 50 ± 15 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP1940±18 | SWIR | standard | 1940 ± 18 | 45 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1, 2 |
| STO-BP2010±20 | SWIR | standard | 2010 ± 20 | 180 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2017±10 | SWIR | standard | 2017 ± 10 | 35 ± 10 | T>=55% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2050±20 | SWIR | standard | 2050 ± 20 | 200 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2120±20 | SWIR | standard | 2120 ± 20 | 50 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2220±20 | SWIR | standard | 2220 ± 20 | 45 ± 10 | T>=75% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2240±20 | SWIR | standard | 2240 ± 20 | 30 ± 10 | T>=80% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2250±10 | SWIR | standard | 2250 ± 10 | 30 ± 10 | T>=85% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2300±20 | SWIR | standard | 2300 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2310±20 | SWIR | standard | 2310 ± 20 | 90 ± 10 | T>=90% | 400-3000 nm; T < 1% | White glass | 1 |
| STO-BP2400±24 | SWIR | standard | 2400 ± 24 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 3.5 |
| STO-BP2435±10 | SWIR | standard | 2435 ± 10 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2435±20 | SWIR | standard | 2435 ± 20 | 60 ± 15 | T>=70% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP2460±20 | SWIR | standard | 2460 ± 20 | 50 ± 10 | T>=80% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP2470±30 | SWIR | standard | 2470 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2500±25 | MWIR | standard | 2500 ± 25 | 70 ± 30 | T>=80% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2520±10 | MWIR | standard | 2520 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2530±30 | MWIR | standard | 2530 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2550±50 | MWIR | standard | 2550 ± 50 | 70 ± 30 | T>=75% | 500-3000 nm; T < 1% | Sapphire | 1, 3.5 |
| STO-BP2560±30 | MWIR | standard | 2560 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2570±30 | MWIR | standard | 2570 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2580±30 | MWIR | standard | 2580 ± 30 | 50 ± 20 | T>=75% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±10 | MWIR | standard | 2600 ± 10 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2600±30 | MWIR | standard | 2600 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2610±30 | MWIR | standard | 2610 ± 30 | 50 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP2720 | MWIR | standard | 2720 ± 50 | 140 ± 20 | T>=80% | 100-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2730±30 | MWIR | standard | 2730 ± 30 | 210 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 1 |
| STO-BP2750±50 | MWIR | standard | 2750 ± 50 | 140 ± 20 | T>=80% | 200-30000 nm; T < 1% | Fused silica | 1 |
| STO-BP2850±28 | MWIR | standard | 2850 ± 28 | 86 ± 20 | T>=80% | 1500-5500 nm; T < 1% | Silicon | 0.5, 6.35 |
| STO-BP2900±20 | MWIR | standard | 2900 ± 20 | 50 ± 10 | T>=70% | 1500-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP3030±40 | MWIR | standard | 3030 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3050±50 | MWIR | standard | 3050 ± 50 | 100 ± 20 | T>=80% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP3085±30 | MWIR | standard | 3085 ± 30 | 100 ± 20 | T>=80% | 300-30000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3130±40 | MWIR | standard | 3130 ± 40 | 145 ± 30 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3150±20 | MWIR | standard | 3150 ± 20 | 60 ± 10 | T>=80% | 1500-5500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3250±25 | MWIR | standard | 3250 ± 25 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3250±50 | MWIR | standard | 3250 ± 50 | 180 ± 20 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3275±20 | MWIR | standard | 3275 ± 10 | 30 ± 10 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP3280±30 | MWIR | standard | 3280 ± 30 | 210 ± 15 | T>=75% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3315±10 | MWIR | standard | 3315 ± 10 | 210 ± 10 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25 |
| STO-BP3320±50单 | MWIR | standard | 3320 ± 50 | 190 ± 20 | T>=60% | 800-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3330±15 | MWIR | standard | 3330 ± 15 | 160 ± 20 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3360±20 | MWIR | standard | 3360 ± 20 | 70 ± 10 | T>=80% | 1500-6500 nm; T < 1% | Fused silica | 0.5 |
| STO-BP3370±35 | MWIR | standard | 3370 ± 35 | 660 ± 70 | T>=80% | 400-3800 nm; T < 1% | Silicon | 0.25, 0.38 |
| STO-BP3370±50 | MWIR | standard | 3370 ± 50 | 400 ± 30 | T>=80% | 1000-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3375±20 | MWIR | standard | 3375 ± 20 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP3375±40 | MWIR | standard | 3375 ± 40 | 660 ± 70 | T>=85% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3390±35 | MWIR | standard | 3390 ± 35 | 210 ± 10 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.25 |
| STO-BP3416±20 | MWIR | standard | 3416 ± 20 | 120 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3430±40 | MWIR | standard | 3430 ± 40 | 120 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3440±30 | MWIR | standard | 3440 ± 30 | 120 ± 10 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3580±40 | MWIR | standard | 3580 ± 40 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3615±20 | MWIR | standard | 3615 ± 20 | 160 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3630±50 | MWIR | standard | 3630 ± 50 | 145 ± 20 | T>=80% | 400-15000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP3660±20 | MWIR | standard | 3660 ± 20 | 40 ± 10 | T>=80% | 800-6000 nm; T < 1% | Silicon | 0.5, 0.916 |
| STO-BP3680±40 | MWIR | standard | 3680 ± 40 | 162 ± 24 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP3770±20 | MWIR | standard | 3770 ± 20 | 50 ± 10 | T>=80% | 400-13600 nm; T < 1% | Sapphire | 0.5 |
| STO-BP3940±60 | MWIR | standard | 3940 ± 60 | 90 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3950±39 | MWIR | standard | 3950 ± 39 | 200 ± 20 | T>=85% | 400-8000 nm; T < 1% | Silicon | 0.5 |
| STO-BP3990±50 | MWIR | standard | 3990 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4020±40 | MWIR | standard | 4020 ± 40 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4050±50 | MWIR | standard | 4050 ± 50 | 100 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4060±50 | MWIR | standard | 4060 ± 50 | 100 ± 20 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4073±40 | MWIR | standard | 4073 ± 40 | 125 ± 50 | T>=85% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4260±50 | MWIR | standard | 4260 ± 50 | 180 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4320±50 | MWIR | standard | 4320 ± 50 | 600 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4380±50 | MWIR | standard | 4380 ± 50 | 150 ± 20 | T>=80% | 1000-9000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4490±70 | MWIR | standard | 4490 ± 70 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4515±20 | MWIR | standard | 4515 ± 20 | 90 ± 20 | T>=75% | 200-30000 nm; T < 1% | Sapphire | 1 |
| STO-BP4530±45 | MWIR | standard | 4530 ± 45 | 350 ± 20 | T>=80% | 400-20000 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-BP4560±40 | MWIR | standard | 4560 ± 40 | 310 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP4580±60 | MWIR | standard | 4580 ± 60 | 140 ± 20 | T>=70% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±50 | MWIR | standard | 4680 ± 50 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±55 | MWIR | standard | 4680 ± 55 | 180 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4680±60 | MWIR | standard | 4680 ± 60 | 180 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±20 | MWIR | standard | 4710 ± 20 | 140 ± 20 | T>=75% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP4710±40 | MWIR | standard | 4710 ± 40 | 180 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-BP4760±50 | MWIR | standard | 4760 ± 50 | 285 ± 70 | T>=80% | 400-11000 nm | Silicon | 0.5 |
| STO-BP4830±40 | MWIR | standard | 4830 ± 40 | 220 ± 20 | T>=75% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP5000±50 | MWIR/LWIR transition | standard | 5000 ± 50 | 150 ± 20 | T>=85% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5010±50 | MWIR/LWIR transition | standard | 5010 ± 50 | 220 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP5070±40 | MWIR/LWIR transition | standard | 5070 ± 50 | 100 ± 20 | T>=75% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-BP5120±50 | MWIR/LWIR transition | standard | 5120 ± 50 | 320 ± 20 | T>=70% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-BP5200±50 | MWIR/LWIR transition | standard | 5200 ± 50 | 610 ± 40 | T>=80% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5250±50 | MWIR/LWIR transition | standard | 5250 ± 50 | 90 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP5380±30 | MWIR/LWIR transition | standard | 5380 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5450±30 | MWIR/LWIR transition | standard | 5450 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5480±30 | MWIR/LWIR transition | standard | 5480 ± 30 | 100 ± 20 | T>=65% | 400-15000 nm; T < 1% | Sapphire | 1 |
| STO-BP5600±60 | MWIR/LWIR transition | standard | 5600 ± 60 | 120 ± 20 | T>=80% | 1000-10000 nm | Silicon | 1.5 |
| STO-BP5850±50 | MWIR/LWIR transition | standard | 5850 ± 50 | 200 ± 20 | T>=70% | 400-11000 nm; T < 1% | Silicon | 1 |
| STO-BP5850±60 | MWIR/LWIR transition | standard | 5850 ± 60 | 160 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP5950±50 | MWIR/LWIR transition | standard | 5950 ± 50 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6050±50 | MWIR/LWIR transition | standard | 6050 ± 50 | 200 ± 20 | T>=75% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6150±60 | MWIR/LWIR transition | standard | 6150 ± 60 | 200 ± 20 | T>=70% | 1000-10000 nm; T < 1% | Silicon | 1.5 |
| STO-BP6220±30 | MWIR/LWIR transition | standard | 6220 ± 62 | 140 ± 20 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP6235±30 | MWIR/LWIR transition | standard | 6235 ± 30 | 110 ± 20 | T>=60% | 400-11000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-BP6240±40 | MWIR/LWIR transition | standard | 6240 ± 40 | 90 ± 20 | T>=70% | 400-11000 nm; T < 1% | Germanium | 1 |
| STO-BP6250±30 | MWIR/LWIR transition | standard | 6250 ± 30 | 120 ± 20 | T>=70% | 400-15000 nm; T < 1% | Silicon | 1 |
| STO-BP6820±68 | MWIR/LWIR transition | standard | 6820 ± 68 | 100 ± 20 | T>=75% | 400-10600 nm; T < 1% | Silicon | 1 |
| STO-BP6910±20 | MWIR/LWIR transition | standard | 6910 ± 30 | 90 ± 20 | T>=65% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP7400±50 | MWIR/LWIR transition | standard | 7400 ± 50 | 360 ± 20 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5 |
| STO-BP7500±50 | MWIR/LWIR transition | standard | 7500 ± 50 | 2500 ± 100 | T>=90% | 400-17100 nm; T < 1% | Germanium | 0.6 |
| STO-BP7530±30 | MWIR/LWIR transition | standard | 7530 ± 30 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7690±50 | MWIR/LWIR transition | standard | 7690 ± 50 | 340 ± 30 | T>=70% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7700±50 | MWIR/LWIR transition | standard | 7700 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7720±50 | MWIR/LWIR transition | standard | 7720 ± 50 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7760±50 | MWIR/LWIR transition | standard | 7760 ± 50 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7780±20 | MWIR/LWIR transition | standard | 7780 ± 20 | 180 ± 30 | T>=80% | 400-10600 nm; T < 1% | Silicon | 0.5, 1 |
| STO-BP7800±50 | MWIR/LWIR transition | standard | 7800 ± 50 | 450 ± 30 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7890±80 | MWIR/LWIR transition | standard | 7890 ± 80 | 500 ± 30 | T>=80% | 200-13500 nm; T < 1% | Silicon | 0.5 |
| STO-BP7950±50 | MWIR/LWIR transition | standard | 7950 ± 50 | 450 ± 30 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-BP7950±80 | MWIR/LWIR transition | standard | 7950 ± 80 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8010±20 | LWIR | standard | 8010 ± 20 | 200 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8060±60 | LWIR | standard | 8060 ± 60 | 250 ± 20 | T>80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8120±30 | LWIR | standard | 8120 ± 30 | 250 ± 20 | T>90% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8340±30 | LWIR | standard | 8340 ± 30 | 250 ± 20 | T>75% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-BP8350±100 | LWIR | standard | 8350 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8400±100 | LWIR | standard | 8400 ± 100 | 50 ± 20 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8500±100 | LWIR | standard | 8500 ± 100 | 50 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8550±100 | LWIR | standard | 8550 ± 100 | 45 ± 10 | T>70% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8700±100 | LWIR | standard | 8700 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP8800±100 | LWIR | standard | 8800 ± 100 | 210 ± 30 | T>=75% | 400-13600 nm; T < 1% | Silicon | 0.5 |
| STO-BP10100±100 | LWIR | standard | 10100 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10220±100 | LWIR | standard | 10220 ± 100 | 660 ± 40 | T>=85% | 400-14000 nm; T < 1% | Germanium | 1 |
| STO-BP10580±50 | LWIR | standard | 10580 ± 50 | 250 ± 20 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP10860±150 | LWIR | standard | 10860 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11100±150 | LWIR | standard | 11100 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11200±150 | LWIR | standard | 11200 ± 150 | 640 ± 50 | T>=70% | 400-14000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11500±50 | LWIR | standard | 11500 ± 50 | 550 ± 50 | T>=65% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP11580±60 | LWIR | standard | 11580 ± 60 | 550 ± 50 | T>=70% | 400-18000 nm; T < 1% | Silicon | 0.5 |
| STO-BP12600±100 | LWIR | standard | 12600 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP12750±100 | LWIR | standard | 12750 ± 100 | 800 ± 40 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13000±100 | LWIR | standard | 13000 ± 100 | 4000 ± 100 | T>=85% | 1200-20000 nm; T < 1% | Germanium | 0.75, 0.9 |
| STO-BP13250±100 | LWIR | standard | 13250 ± 100 | 850 ± 50 | T>=85% | 400-15000 nm; T < 1% | Germanium | 1 |
| STO-BP13650±100 | LWIR | standard | 13650 ± 100 | 850 ± 50 | T>=80% | 400-15000 nm; T < 1% | Germanium | 0.5 |
| STO-BP15000±200 | LWIR | standard | 15000 ± 200 | 2200 ± 50 | T>=65% | 2000-25000 nm; T < 1% | Germanium | 2.2 |
| STO-BP16000±200 | LWIR | standard | 16000 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
| STO-BP16200±200 | LWIR | standard | 16200 ± 200 | 2400 ± 50 | T>=70% | 2000-25000 nm; T < 1% | Germanium | 1 |
MWIR および LWIR のセンシング、イメージング、検出器光路向けの広帯域追加モデルです。
| モデル | スペクトル領域 | 通過帯域 (nm) | 透過範囲 (nm) | 透過率 | 遮光 | 基板 | 基板厚さ (mm) |
|---|---|---|---|---|---|---|---|
| STO-WBP1000~3000 | SWIR | 970 ± 100 – 2470 ± 100 | 1100-2300 | T>=90% | 200-3560 nm; T < 1% | Glass ceramic | 1 |
| STO-WBP1520~1850 | SWIR | 1520 ± 50 – 1850 ± 50 | 1600-1750 | T>=80% | 400-3300 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP1550~1750 | SWIR | 1550 ± 50 – 1750 ± 50 | 1600-1700 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1550~5050 | MWIR | 1550 ± 50 – 5050 ± 50 | 1600-5000 | T>=80% | 1500-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP1650~2350 | SWIR | 1650 ± 50 – 2350 ± 50 | 1700-2250 | T>=80% | 400-4000 nm; T < 10% | Silicon | 0.5 |
| STO-WBP2050~2350 | SWIR | 2050 ± 50 – 2350 ± 50 | 2150-2250 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1, 1.2 |
| STO-WBP2050~2500 | SWIR | 2050 ± 50 – 2500 ± 50 | 2150-2450 | T>=80% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2080~2350 | SWIR | 2080 ± 50 – 2350 ± 50 | 2135-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 1.2 |
| STO-WBP2080~2430 | SWIR | 2080 ± 50 – 2430 ± 50 | 2180-2330 | T>=80% | 1500-2800 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2170~3670 | MWIR | 2170 ± 50 – 3670 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3600 | MWIR | 2200 ± 50 – 3750 ± 50 | 2300-3600 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2300~3700 | MWIR | 2250 ± 30 – 3770 ± 30 | 2300-3700 | T>=90% | 1500-5000 nm; T < 1% | Silicon | 1 |
| STO-WBP2400~3150 | MWIR | 2400 ± 50 – 3150 ± 50 | 2500-3000 | T>=90% | 400-10500 nm; T < 1% | Sapphire | 1, 5 |
| STO-WBP2450~3200 | MWIR | 2450 ± 20 – 3200 ± 20 | 2500-3140 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 2.5 |
| STO-WBP2450~4600 | MWIR | 2450 ± 50 – 4600 ± 50 | 2550-4500 | T>=90% | 400-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2450~5150 | MWIR | 2450 ± 50 – 5150 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2490~5240 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Silicon | 1 |
| STO-WBP2600~5000 | MWIR | 2490 ± 50 – 5240 ± 50 | 2640-5040 | T>=90% | 400-7040 nm; T < 1% | Germanium | 0.5, 0.9, 1 |
| STO-WBP2500-5000 | MWIR | 2500 ± 50 – 5000 ± 50 | 2700-4900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP2500~5100 | MWIR | 2500 ± 50 – 5100 ± 50 | 2650-4950 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2550~3150 | MWIR | 2550 ± 50 – 3150 ± 50 | 2700-3100 | T>=85% | 1500-5000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2550~3250 | MWIR | 2550 ± 50 – 3250 ± 50 | 2700-3100 | T>=90% | 430-10030 nm; T < 1% | Silicon | 0.5, 2.5 |
| STO-WBP2600~3300 | MWIR | 2600 ± 50 – 3300 ± 50 | 2850-3000 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP2650~5050 | MWIR | 2600 ± 100 – 5050 ± 50 | 2750-4950 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2650~3000 | MWIR | 2650 ± 40 – 3000 ± 40 | 2700-2950 | T>=85% | 1000-6000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP2700-3550 | MWIR | 2700 ± 50 – 3550 ± 50 | 2800-3450 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2700-3600 | MWIR | 2700 ± 50 – 3600 ± 50 | 2800-3500 | T>=90% | 300-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP2700~3150 | MWIR | 2700 ± 50 – 3150 ± 50 | 2800-3050 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2720~2980 | MWIR | 2720 ± 20 – 2980 ± 20 | 2780-2920 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2730~3010 | MWIR | 2730 ± 20 – 3010 ± 20 | 2800-2900 | T>=85% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP2750~4850 | MWIR | 2750 ± 50 – 4850 ± 50 | 3000-4600 | T>=85% | 1000-5100 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP2750~5100 | MWIR | 2750 ± 50 – 5100 ± 50 | 2900-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP2790~3070 | MWIR | 2790 ± 20 – 3070 ± 20 | 2900-3000 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP2800~3050 | MWIR | 2800 ± 50 – 3050 ± 50 | 2900-3000 | T>=90% | 1500-6500 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5150 | MWIR | 2800 ± 50 – 5150 ± 50 | 2950-5000 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP2800~5200单 | MWIR | 2800 ± 100 – 5200 ± 100 | 2900-5100 | T>=55% | 2580-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP2800~5250 | MWIR | 2800 ± 50 – 5250 ± 50 | 2950-5100 | T>=90% | 1500-10500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4140 | MWIR | 2900 ± 50 – 4140 ± 50 | 3100-4040 | T>=90% | 700-8040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4450 | MWIR | 2900 ± 50 – 4450 ± 50 | 3050-4350 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP2900~4550 | MWIR | 2900 ± 50 – 4550 ± 50 | 3050-4450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP2900~4850 | MWIR | 2900 ± 50 – 4850 ± 50 | 3050-4750 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP2900~5100 | MWIR | 2900 ± 50 – 5100 ± 50 | 3000-5000 | T>=90% | 1000-10500 nm; T < 1% | Germanium | 0.3, 0.4, 0.7 |
| STO-WBP2950~3250 | MWIR | 2950 ± 50 – 3250 ± 50 | 3000-3200 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP2950~3600 | MWIR | 2950 ± 50 – 3600 ± 50 | 3150-3400 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~3650 | MWIR | 2950 ± 50 – 3650 ± 50 | 3150-3450 | T>=85% | 1000-10500 nm; T < 1% | Germanium | 0.6, 0.9 |
| STO-WBP2950~4950 | MWIR | 2950 ± 50 – 4950 ± 50 | 3100-4800 | T>=90% | 400-11000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3000~3300 | MWIR | 3000 ± 20 – 3300 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP3000~3700 | MWIR | 3000 ± 50 – 3700 ± 50 | 3100-3600 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3000~3800 | MWIR | 3000 ± 100 – 3800 ± 100 | 3100-3700 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3000~3875 | MWIR | 3000 ± 100 – 3875 ± 75 | 3250-3650 | T>=80% | 500-5500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3000~4260 | MWIR | 3000 ± 50 – 4260 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~4300 | MWIR | 3000 ± 50 – 4300 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3000~5300 | MWIR | 3000 ± 50 – 5300 ± 50 | 3150-5150 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3000~5400 | MWIR | 3000 ± 50 – 5400 ± 50 | 3100-5300 | T>=90% | 1500-2800 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP3020~3320 | MWIR | 3020 ± 20 – 3320 ± 20 | 3050-3250 | T>=85% | 200-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3040~4320 | MWIR | 3040 ± 50 – 4320 ± 50 | 3250-4050 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~4200 | MWIR | 3050 ± 50 – 4200 ± 50 | 3250-3900 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5000 | MWIR | 3050 ± 50 – 5000 ± 50 | 3200-4850 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3050~5450 | MWIR | 3050 ± 50 – 5450 ± 50 | 3200-5300 | T>=85% | 1500-15500 nm; T < 1% | Sapphire | 0.3, 0.75, 1 |
| STO-WBP3100~3700 | MWIR | 3100 ± 150 – 3700 ± 150 | 3200-3600 | T>=90% | 400-20000 nm; T < 1% | Sapphire | 1 |
| STO-WBP3100~4100 | MWIR | 3100 ± 50 – 4100 ± 50 | 3300-3900 | T>=90% | 900-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3100~4150 | MWIR | 3100 ± 50 – 4150 ± 50 | 3250-4050 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3100~4200 | MWIR | 3100 ± 50 – 4200 ± 50 | 3250-4050 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3100~4250 | MWIR | 3100 ± 50 – 4250 ± 50 | 3250-3900 | T>=80% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3130~3400 | MWIR | 3130 ± 50 – 3400 ± 50 | 3250-3350 | T>=75% | 500-3700 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3150~3560 | MWIR | 3150 ± 50 – 3560 ± 50 | 3300-3500 | T>=85% | 400-10000 nm; T < 1% | Sapphire | 0.3 |
| STO-WBP3150~3600 | MWIR | 3150 ± 50 – 3600 ± 50 | 3250-3520 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~3650 | MWIR | 3150 ± 50 – 3650 ± 50 | 3250-3500 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~4100 | MWIR | 3150 ± 50 – 4100 ± 50 | 3250-4000 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3150~4200 | MWIR | 3150 ± 50 – 4200 ± 50 | 3300-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3150~5150 | MWIR | 3150 ± 50 – 5150 ± 50 | 3300-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3180-3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3380 | T>=85% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3180~3420 | MWIR | 3180 ± 50 – 3420 ± 50 | 3200-3400 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~3500 | MWIR | 3200 ± 50 – 3500 ± 50 | 3250-3450 | T>=85% | 500-3700 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3200~3550 | MWIR | 3200 ± 50 – 3550 ± 50 | 3280-3480 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.7, 0.9 |
| STO-WBP3200~4000 | MWIR | 3200 ± 50 – 4000 ± 50 | 3350-3850 | T>=90% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP3200~4100 | MWIR | 3200 ± 50 – 4100 ± 50 | 3300-4000 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3200~5200 | MWIR | 3200 ± 100 – 5200 ± 100 | 3300-5050 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.3 |
| STO-WBP3170~3430 | MWIR | 3220 ± 20 – 3480 ± 20 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3, 0.9, 1 |
| STO-WBP3230~3500 | MWIR | 3230 ± 50 – 3500 ± 50 | 3250-3480 | T>=80% | 400-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3230~3520 | MWIR | 3230 ± 30 – 3520 ± 30 | 3300-3430 | T>=85% | 450-6050 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3250~4200 | MWIR | 3250 ± 50 – 4200 ± 50 | 3400-4100 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.3, 0.4, 1 |
| STO-WBP3270~3470 | MWIR | 3270 ± 50 – 3470 ± 50 | 3320-3420 | T>=80% | 200-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3300~4250 | MWIR | 3300 ± 50 – 4250 ± 50 | 3450-4150 | T>=85% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3300~4900 | MWIR | 3300 ± 50 – 4900 ± 50 | 3400-4800 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3400~3600 | MWIR | 3325 ± 25 – 3675 ± 25 | 3450-3550 | T>=90% | 900-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3350~4250 | MWIR | 3350 ± 50 – 4250 ± 50 | 3550-4150 | T>=90% | 430-10030 nm; T < 1% | Silicon | 2.5 |
| STO-WBP3350~4500 | MWIR | 3350 ± 50 – 4500 ± 50 | 3500-4350 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3350~4750 | MWIR | 3350 ± 50 – 4750 ± 50 | 3450-4650 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4000 | MWIR | 3400 ± 50 – 4000 ± 50 | 3500-3850 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3400~4100 | MWIR | 3400 ± 100 – 4100 ± 100 | 3550-4000 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.4 |
| STO-WBP3400~4200 | MWIR | 3400 ± 100 – 4200 ± 100 | 3550-4100 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5, 1 |
| STO-WBP3400~4300 | MWIR | 3400 ± 50 – 4300 ± 50 | 3500-4200 | T>=80% | 1500-7000 nm; T < 1% | Sapphire | 2.5 |
| STO-WBP3400~4800 | MWIR | 3400 ± 50 – 4800 ± 50 | 3500-4700 | T>=90% | 1500-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4850 | MWIR | 3400 ± 50 – 4850 ± 50 | 3400-4500 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~4950 | MWIR | 3400 ± 50 – 4950 ± 50 | 3700-4700 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5000 | MWIR | 3400 ± 50 – 5000 ± 50 | 3500-4900 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3400~5100 | MWIR | 3400 ± 50 – 5100 ± 50 | 3600-5000 | T>=90% | 1500-10600 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3420~3910 | MWIR | 3420 ± 50 – 3910 ± 50 | 3500-3830 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3425~4850 | MWIR | 3425 ± 75 – 4850 ± 50 | 3650-4750 | T>=85% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3440~4890 | MWIR | 3440 ± 50 – 4890 ± 50 | 3500-4830 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3450~4000 | MWIR | 3450 ± 50 – 4000 ± 50 | 3500-3900 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3450~4050 | MWIR | 3450 ± 50 – 4050 ± 50 | 3600-3900 | T>=90% | 200-10000 nm; T < 1% | Germanium | 1.8 |
| STO-WBP3470~4950 | MWIR | 3470 ± 50 – 4950 ± 50 | 3570-4850 | T>=90% | 500-10070 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3480~4880 | MWIR | 3480 ± 50 – 4880 ± 50 | 3700-4800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3490~3850 | MWIR | 3490 ± 50 – 3850 ± 50 | 3550-3750 | T>=80% | 400-6000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~3950 | MWIR | 3490 ± 50 – 3950 ± 50 | 3650-3800 | T>=80% | 400-10000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3490~4050 | MWIR | 3490 ± 50 – 4050 ± 50 | 3650-3950 | T>=80% | 400-10000 nm; T < 1% | Silicon | 1 |
| STO-WBP3500~4150 | MWIR | 3500 ± 50 – 4150 ± 50 | 3600-4050 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~4900 | MWIR | 3500 ± 50 – 4900 ± 50 | 3600-4800 | T>=70% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3500~4950 | MWIR | 3500 ± 50 – 4950 ± 50 | 3560-4900 | T>=90% | 540-10040 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5300 | MWIR | 3500 ± 50 – 5300 ± 50 | 3600-5100 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3500~5600 | MWIR | 3500 ± 50 – 5600 ± 50 | 3600-5500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3525~4925 | MWIR | 3525 ± 100 – 4950 ± 100 | 3700-4800 | T>=90% | 1500-9000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3530~3950 | MWIR | 3530 ± 50 – 3950 ± 50 | 3610-3870 | T>=75% | 400-5580 nm; T < 1% | Silicon | 0.5, 1.2 |
| STO-WBP3500~3970 | MWIR | 3545 ± 20 – 4015 ± 20 | 3610-3955 | T>=80% | 450-5600 nm; T < 1% | Zinc selenide | 2 |
| STO-WBP3550~4100 | MWIR | 3550 ± 50 – 4100 ± 50 | 3650-4000 | T>=93% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4250 | MWIR | 3550 ± 50 – 4250 ± 50 | 3600-4200 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3550~4750 | MWIR | 3550 ± 50 – 4750 ± 50 | 3650-4650 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4950 | MWIR | 3550 ± 50 – 4950 ± 50 | 3700-4800 | T>=90% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~4990 | MWIR | 3550 ± 50 – 4990 ± 50 | 3600-4800 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3550~5000 | MWIR | 3550 ± 50 – 5000 ± -100 | 3700-4600 | T>=90% | 1500-10500 nm; T < 1% | Sapphire | 0.3, 0.5 |
| STO-WBP3600-4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3620-3890 | T>=75% | 450-5600 nm; T < 1% | Zinc selenide | 1.5, 2 |
| STO-WBP3600~4000 | MWIR | 3600 ± 50 – 4000 ± 50 | 3680-3900 | T>=75% | 400-5580 nm; T < 1% | Silicon | 1.2 |
| STO-WBP3600~4300 | MWIR | 3600 ± 50 – 4300 ± 50 | 3700-4200 | T>=85% | 1500-6000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3600~4850 | MWIR | 3600 ± 50 – 4850 ± 50 | 3700-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3600~5000 | MWIR | 3600 ± 50 – 5000 ± 50 | 3700-4700 | T>=90% | 400-9000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3600~5100 | MWIR | 3600 ± 100 – 5100 ± 100 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3600~5300 | MWIR | 3600 ± 50 – 5300 ± 50 | 3700-5200 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3600~5450 | MWIR | 3600 ± 50 – 5450 ± 50 | 3800-5250 | T>=80% | 400-6000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3600~5550 | MWIR | 3600 ± 50 – 5550 ± 50 | 3700-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3605~5275 | MWIR | 3605 ± 25 – 5275 ± 25 | 3730-5150 | T>=90% | 930-10050 nm; T < 1% | Germanium | 0.5 |
| STO-WBP3650~4265 | MWIR | 3650 ± 50 – 4265 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5050 | MWIR | 3650 ± 50 – 5050 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5100 | MWIR | 3650 ± 50 – 5100 ± 50 | 3740-5000 | T>=93% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5150 | MWIR | 3650 ± 70 – 5150 ± 70 | 3800-5000 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3650~5350 | MWIR | 3650 ± 50 – 5350 ± 50 | 3800-5200 | T>=90% | 400-11000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5550 | MWIR | 3650 ± 50 – 5550 ± 50 | 3750-5300 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3650~5600 | MWIR | 3650 ± 50 – 5600 ± 50 | 3750-5400 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3650~5750 | MWIR | 3650 ± 50 – 5750 ± 50 | 3750-5450 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4500 | MWIR | 3650 ± 50 – 4600 ± 50 | 3700-4500 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP3660~4250 | MWIR | 3660 ± 50 – 4250 ± 50 | 3750-4150 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP3800~4850 | MWIR | 3675 ± 25 – 4975 ± 25 | 3800-4850 | T>=90% | 500-6500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3680~5160 | MWIR | 3700 ± 100 – 5200 ± 100 | 3800-4700 | T>=90% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~4550 | MWIR | 3700 ± 50 – 4550 ± 50 | 3800-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3700~4700 | MWIR | 3700 ± 50 – 4700 ± 50 | 3800-4600 | T>=85% | 500-8000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~4990 | MWIR | 3700 ± 50 – 4990 ± 40 | 3800-4750 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.38, 0.7 |
| STO-WBP3700~5020 | MWIR | 3700 ± 50 – 5020 ± 50 | 3800-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5150 | MWIR | 3700 ± 50 – 5150 ± 50 | 3750-4900 | T>=92% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5200 | MWIR | 3700 ± 60 – 5200 ± 60 | 3850-5050 | T>=90% | 200-10500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3700~5600 | MWIR | 3700 ± 50 – 5600 ± 50 | 3850-5450 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5750 | MWIR | 3700 ± 50 – 5750 ± 50 | 3850-5500 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3700~5800 | MWIR | 3700 ± 50 – 5800 ± 50 | 3850-5600 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 1 |
| STO-WBP3710~5030 | MWIR | 3710 ± 30 – 5030 ± 30 | 3800-4900 | T>=90% | 1800-7000 nm; T < 1% | Silicon | 1 |
| STO-WBP3730~4850 | MWIR | 3730 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3730~4900 | MWIR | 3730 ± 50 – 4900 ± 50 | 3850-4750 | T>=90% | 1000-6500 nm; T < 1% | Germanium | 0.3, 0.4 |
| STO-WBP3730~4960 | MWIR | 3730 ± 50 – 4960 ± 50 | 3850-4600 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.9 |
| STO-WBP3740~4840 | MWIR | 3740 ± 50 – 4840 ± 50 | 3740-4840 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3740~4860 | MWIR | 3740 ± 40 – 4860 ± 40 | 3850-4700 | T>=85% | 1000-10000 nm; T < 1% | Germanium | 0.3, 0.38, 0.4 |
| STO-WBP3740~4950 | MWIR | 3740 ± 50 – 4950 ± 50 | 3900-4800 | T>=90% | 540-8040 nm | Germanium | 0.3 |
| STO-WBP3750~4500 | MWIR | 3750 ± 50 – 4500 ± 50 | 3850-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~4850 | MWIR | 3750 ± 50 – 4850 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3750~4900 | MWIR | 3750 ± 50 – 4900 ± 50 | 3900-4700 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP3750~5020 | MWIR | 3750 ± 50 – 5020 ± 50 | 3850-4920 | T>=90% | 500-7000 nm; T < 1% | Germanium | 0.3, 1 |
| STO-WBP3750~5050 | MWIR | 3750 ± 50 – 5050 ± 50 | 3900-4900 | T>=85% | 1000-6500 nm; T < 1% | Germanium | 0.8 |
| STO-WBP3750~5650 | MWIR | 3750 ± 50 – 5650 ± 50 | 4000-5300 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP3750~5700 | MWIR | 3750 ± 50 – 5700 ± 50 | 4000-5500 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3750~5800 | MWIR | 3750 ± 50 – 5800 ± 50 | 3800-5600 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP3800~4100 | MWIR | 3800 ± 50 – 4100 ± 50 | 3850-4050 | T>=90% | 500-8000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP3800~4700 | MWIR | 3800 ± 50 – 4700 ± 50 | 3800-4900 | T>=90% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP3800~5500 | MWIR | 3800 ± 100 – 5500 ± 100 | 3900-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5150 | MWIR | 3900 ± 100 – 5150 ± 50 | 4400-4800 | T>=85% | 500-6500 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5600 | MWIR | 3900 ± 100 – 5600 ± 100 | 4000-5500 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP3900~5650 | MWIR | 3900 ± 100 – 5650 ± 100 | 4100-5400 | T>=80% | 400-14000 nm; T < 1% | Sapphire | 0.5 |
| STO-WBP4000~4650 | MWIR | 4000 ± 50 – 4650 ± 50 | 4120-4480 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4000~5000 | MWIR | 4000 ± 200 – 5000 ± 200 | 4200-4900 | T>=85% | 400-20000 nm; T < 1% | Sapphire | 0.5, 1 |
| STO-WBP4000~5200 | MWIR | 4000 ± 50 – 5200 ± 50 | 4100-5000 | T>=90% | 200-10000 nm; T < 1% | Germanium | 0.9, 1.8 |
| STO-WBP4100~4650 | MWIR | 4100 ± 50 – 4650 ± 50 | 4200-4550 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP4120~4360 | MWIR | 4120 ± 60 – 4360 ± 60 | 4220-4320 | T>=85% | 300-6500 nm; T < 1% | Silicon | 1 |
| STO-WBP4140~4370 | MWIR | 4140 ± 30 – 4370 ± 30 | 4200-4300 | T>=75% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4140~4440 | MWIR | 4140 ± 30 – 4440 ± 30 | 4200-4400 | T>=80% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4150~4650 | MWIR | 4150 ± 50 – 4650 ± 50 | 4250-4550 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4200~4450 | MWIR | 4200 ± 20 – 4450 ± 20 | 4250-4400 | T>=85% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4200~4750 | MWIR | 4200 ± 50 – 4750 ± 50 | 4250-4650 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4200~5000 | MWIR | 4200 ± 50 – 5000 ± 50 | 4350-4800 | T>=85% | 500-10000 nm; T < 1% | Silicon | 4 |
| STO-WBP4212~4457 | MWIR | 4212 ± 40 – 4457 ± 40 | 4260-4400 | T>=80% | 300-6500 nm; T < 1% | Silicon | 0.95 |
| STO-WBP4230~4520 | MWIR | 4230 ± 20 – 4520 ± 20 | 4350-4450 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 1 |
| STO-WBP4250~4800 | MWIR | 4250 ± 50 – 4800 ± 50 | 4350-4700 | T>=80% | 1500-7000 nm; T < 1% | Germanium | 0.3, 0.9 |
| STO-WBP4250~5300 | MWIR | 4250 ± 50 – 5300 ± 50 | 4400-5000 | T>=85% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4290~4580 | MWIR | 4290 ± 20 – 4580 ± 20 | 4400-4500 | T>=80% | 1500-5000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP4300~4500 | MWIR | 4300 ± 30 – 4500 ± 30 | 4350-4450 | T>=90% | 1500-7000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4400~4700 | MWIR | 4400 ± 50 – 4700 ± 50 | 4570-4600 | T>=80% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4420~4720 | MWIR | 4420 ± 50 – 4720 ± 50 | 4470-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~4750 | MWIR | 4450 ± 70 – 4750 ± 70 | 4570-4620 | T>=70% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4450~4950 | MWIR | 4450 ± 50 – 4950 ± 50 | 4550-4900 | T>=90% | 1500-6000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4450~5150 | MWIR | 4450 ± 50 – 5150 ± 50 | 4550-5050 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4500~4800 | MWIR | 4500 ± 50 – 4800 ± 50 | 4640-4740 | T>=85% | 400-10000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP4500~4900 | MWIR | 4500 ± 50 – 4900 ± 50 | 4600-4800 | T>=85% | 1500-11000 nm; T < 1% | Silicon | 0.8 |
| STO-WBP4520~4720 | MWIR | 4520 ± 50 – 4720 ± 50 | 4570-4670 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP4520~4820 | MWIR | 4520 ± 50 – 4820 ± 50 | 4570-4770 | T>=80% | 520-8020 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4550~5200 | MWIR | 4550 ± 50 – 5300 ± 50 | 4600-5150 | T>=85% | 1000-9400 nm; T < 1% | Germanium | 0.8, 1 |
| STO-WBP4600~4900 | MWIR | 4600 ± 50 – 4900 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4950 | MWIR | 4650 ± 50 – 4950 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP4650~4980 | MWIR | 4650 ± 50 – 4980 ± 50 | 4700-4800 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP4650~5300 | MWIR | 4650 ± 50 – 5300 ± 50 | 4800-5200 | T>=80% | 1500-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4750~5150 | MWIR | 4750 ± 50 – 5150 ± 50 | 4800-5000 | T>=80% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4800~5000 | MWIR | 4800 ± 50 – 5000 ± 50 | 4850-4950 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1.2 |
| STO-WBP4800~5100 | MWIR | 4800 ± 50 – 5100 ± 50 | 4850-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4800~5200 | MWIR/LWIR transition | 4800 ± 50 – 5200 ± 50 | 4860-5140 | T>=90% | 1000-8000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4900~5100 | MWIR/LWIR transition | 4900 ± 50 – 5100 ± 50 | 4950-5050 | T>=80% | 400-5500 nm; T < 1% | Silicon | 1 |
| STO-WBP4920~5800 | MWIR/LWIR transition | 4920 ± 50 – 5800 ± 50 | 5100-5600 | T>=85% | 400-10000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP4950~9250 | MWIR/LWIR transition | 4950 ± 50 – 9250 ± 50 | 5100-9100 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP5000~5800 | MWIR/LWIR transition | 5000 ± 50 – 5800 ± 50 | 5100-5600 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5010~5880 | MWIR/LWIR transition | 5010 ± 50 – 5880 ± 50 | 5110-5780 | T>=80% | 400-10000 nm; T < 1% | Germanium | 1 |
| STO-WBP5030~9280 | MWIR/LWIR transition | 5030 ± 50 – 9280 ± 50 | 5180-9130 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5050~9160 | MWIR/LWIR transition | 5050 ± 50 – 9160 ± 50 | 5300-8750 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5090~9450 | MWIR/LWIR transition | 5090 ± 90 – 9450 ± 90 | 5240-9300 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP5100~5850 | MWIR/LWIR transition | 5100 ± 50 – 5850 ± 50 | 5300-5700 | T>=75% | 400-10000 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP5100~9350 | MWIR/LWIR transition | 5100 ± 50 – 9350 ± 50 | 6100-9200 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~6000 | MWIR/LWIR transition | 5150 ± 50 – 6000 ± 50 | 5050-5900 | T>=80% | 500-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5150~9450 | MWIR/LWIR transition | 5150 ± 50 – 9450 ± 50 | 5400-9100 | T>=85% | 620-10120 nm; T < 1% | Germanium | 2 |
| STO-WBP5240~9440 | MWIR/LWIR transition | 5240 ± 70 – 9440 ± 70 | 6000-9000 | T>=80% | 580-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP5400~7400 | MWIR/LWIR transition | 5400 ± 50 – 7400 ± 50 | 5500-7300 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5450~7600 | MWIR/LWIR transition | 5450 ± 50 – 7600 ± 50 | 5600-7400 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5510~6700 | MWIR/LWIR transition | 5510 ± 60 – 6700 ± 60 | 5700-6500 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP5550~7550 | MWIR/LWIR transition | 5550 ± 50 – 7550 ± 50 | 5750-7250 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7600 | MWIR/LWIR transition | 5550 ± 50 – 7600 ± 50 | 5750-7300 | T>=90% | 1500-10600 nm; T < 1% | Germanium | 0.5 |
| STO-WBP5550~7650 | MWIR/LWIR transition | 5550 ± 50 – 7650 ± 50 | 5700-7450 | T>=90% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5550~7700 | MWIR/LWIR transition | 5550 ± 50 – 7700 ± 50 | 5700-7500 | T>=85% | 1500-10000 nm; T < 1% | Germanium | 1.5 |
| STO-WBP5600~6800 | MWIR/LWIR transition | 5600 ± 30 – 6800 ± 30 | 5700-6680 | T>=75% | 1500-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6000~12100 | LWIR | 6000 ± 200 – 12100 ± 200 | 6200-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP6200~10200 | LWIR | 6200 ± 100 – 10200 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6220~7530 | MWIR/LWIR transition | 6220 ± 50 – 7530 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~7600 | MWIR/LWIR transition | 6300 ± 50 – 7600 ± 50 | 6450-7450 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6300~9900 | LWIR | 6300 ± 100 – 9900 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6400~10100 | LWIR | 6400 ± 100 – 10100 ± 100 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.8 |
| STO-WBP6420~10100 | LWIR | 6420 ± 50 – 10100 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP6450~10750 | LWIR | 6450 ± 100 – 10750 ± 100 | 6600-10600 | T>=90% | 1500-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP6450~7750 | MWIR/LWIR transition | 6450 ± 50 – 7750 ± 50 | 6650-7550 | T>=90% | 2000-15000 nm; T < 3% | Germanium | 3 |
| STO-WBP6550~8250 | MWIR/LWIR transition | 6550 ± 100 – 8250 ± 100 | 6700-8100 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6600~8300 | MWIR/LWIR transition | 6600 ± 100 – 8300 ± 100 | 6750-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP6650~8750 | MWIR/LWIR transition | 6650 ± 50 – 8750 ± 50 | 6800-8500 | T>=75% | 1500-11000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP6650~9760 | LWIR | 6650 ± 50 – 9760 ± 50 | 7000-9400 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP6800~8100 | MWIR/LWIR transition | 6800 ± 80 – 8100 ± 80 | 7100-7800 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP6800~8300 | MWIR/LWIR transition | 6800 ± 100 – 8300 ± 100 | 6950-8150 | T>=85% | 400-11000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7100~8400 | MWIR/LWIR transition | 7100 ± 80 – 8400 ± 80 | 7400-8100 | T>=90% | 200-12000 nm; T < 1% | Silicon | 1 |
| STO-WBP7200~8500 | MWIR/LWIR transition | 7200 ± 80 – 8500 ± 80 | 7500-8200 | T>=90% | 200-12000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7200~9400 | LWIR | 7200 ± 50 – 9400 ± 50 | 7300-9100 | T>=90% | 6400-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7250~7850 | MWIR/LWIR transition | 7250 ± 100 – 7850 ± 100 | 7350-7750 | T>=80% | 3300-20000 nm; T < 1% | Germanium | 1, 2 |
| STO-WBP7350~8080 | MWIR/LWIR transition | 7350 ± 50 – 8080 ± 50 | 7510-7980 | T>=90% | 400-12000 nm; T < 3% | Germanium | 0.3 |
| STO-WBP7400~8400 | MWIR/LWIR transition | 7400 ± 50 – 8400 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8430 | MWIR/LWIR transition | 7400 ± 70 – 8430 ± 70 | 7600-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~8500 | MWIR/LWIR transition | 7400 ± 50 – 8500 ± 50 | 7600-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7400~9500 | LWIR | 7400 ± 50 – 9500 ± 50 | 7500-9400 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7450~10200 | LWIR | 7450 ± 50 – 10200 ± 50 | 7600-10000 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7450~13600 | LWIR | 7450 ± 50 – 13600 ± 100 | 7700-13300 | T>=75% | 2000-19000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7450~8500 | MWIR/LWIR transition | 7450 ± 50 – 8500 ± 50 | 7600-8100 | T>=75% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7450~9650 | LWIR | 7450 ± 50 – 9650 ± 50 | 7700-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7400~9900 | LWIR | 7460 ± 50 – 9960 ± 50 | 7660-9760 | T>=90% | 460-16060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7460~9630 | LWIR | 7460 ± 50 – 9630 ± 50 | 7550-9600 | T>=90% | 1500-13000 nm; T < 1% | Germanium | 1 |
| STO-WBP7480~9380 | LWIR | 7480 ± 70 – 9380 ± 70 | 7700-9100 | T>=80% | 500-10080 nm; T < 1% | Germanium | 2 |
| STO-WBP7500~7900 | MWIR/LWIR transition | 7500 ± 70 – 7900 ± 70 | 7600-7800 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~8400 | MWIR/LWIR transition | 7500 ± 50 – 8400 ± 50 | 7700-8100 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8500 | LWIR | 7500 ± 50 – 8500 ± 50 | 7700-8200 | T>=85% | 200-16000 nm; T < 1% | Silicon | 0.5, 1 |
| STO-WBP7500~8550 | LWIR | 7500 ± 50 – 8550 ± 50 | 7700-8200 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~8600 | LWIR | 7500 ± 50 – 8600 ± 50 | 7700-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7500~9300 | LWIR | 7500 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7500~9400 | LWIR | 7500 ± 50 – 9400 ± 50 | 8000-9000 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7550~13700 | LWIR | 7550 ± 50 – 13700 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7550~13950 | LWIR | 7550 ± 100 – 13950 ± 100 | 7750-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7550~8600 | LWIR | 7550 ± 70 – 8600 ± 70 | 7800-8300 | T>=85% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7550~9800 | LWIR | 7550 ± 50 – 9800 ± 50 | 7700-9550 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7575~7975 | MWIR/LWIR transition | 7575 ± 50 – 7975 ± 50 | 7675-7875 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10100 | LWIR | 7600 ± 70 – 10100 ± 100 | 7770-9900 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~10160 | LWIR | 7600 ± 100 – 10160 ± 100 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8100 | MWIR/LWIR transition | 7600 ± 100 – 8100 ± 100 | 7700-8000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~8600 | LWIR | 7600 ± 50 – 8600 ± 50 | 7800-8300 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7600~9300 | LWIR | 7600 ± 50 – 9300 ± 50 | 7700-9000 | T>=85% | 1000-13900 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9500 | LWIR | 7600 ± 50 – 9500 ± 50 | 8000-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9600 | LWIR | 7600 ± 50 – 9600 ± 50 | 7800-9300 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9700 | LWIR | 7600 ± 50 – 9700 ± 50 | 8000-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9730 | LWIR | 7600 ± 50 – 9730 ± 50 | 7800-9500 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7600~9950 | LWIR | 7600 ± 50 – 9950 ± 50 | 7900-9600 | T>=85% | 6400-13000 nm; T < 1% | Germanium | 0.6 |
| STO-WBP7630~8070 | MWIR/LWIR transition | 7630 ± 70 – 8070 ± 70 | 7730-7970 | T>=85% | 400-12075 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7650~10400 | LWIR | 7650 ± 50 – 10400 ± 50 | 7800-10250 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.38 |
| STO-WBP7650~13900 | LWIR | 7650 ± 50 – 13900 ± 100 | 7800-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.7, 1 |
| STO-WBP7650~14100 | LWIR | 7650 ± 50 – 14100 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 0.4, 0.7, 1 |
| STO-WBP7650~8690 | LWIR | 7650 ± 70 – 8690 ± 70 | 7900-8400 | T>=80% | 200-16000 nm; T < 1% | Silicon | 1 |
| STO-WBP7650~9870 | LWIR | 7650 ± 50 – 9870 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~13500 | LWIR | 7700 ± 200 – 13500 ± 500 | 7900-13000 | T>=85% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7700~14250 | LWIR | 7700 ± 100 – 14250 ± 100 | 7750-13400 | T>=85% | 2000-19000 nm | Germanium | 0.4, 1 |
| STO-WBP7700~8200 | MWIR/LWIR transition | 7700 ± 100 – 8200 ± 100 | 7810-8110 | T>=80% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7700~9400 | LWIR | 7700 ± 50 – 9400 ± 50 | 7850-9200 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9600 | LWIR | 7700 ± 100 – 9600 ± 100 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9650 | LWIR | 7700 ± 50 – 9650 ± 50 | 8000-9400 | T>=85% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9850 | LWIR | 7700 ± 100 – 9850 ± 100 | 7870-9570 | T>=85% | 1500-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP7700~9900 | LWIR | 7700 ± 50 – 9900 ± 50 | 8000-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7700~9980 | LWIR | 7700 ± 50 – 9980 ± 50 | 8000-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7730~10250 | LWIR | 7730 ± 70 – 10250 ± 100 | 7900-10050 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7730~9950 | LWIR | 7730 ± 50 – 9950 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10000 | LWIR | 7750 ± 50 – 10000 ± 50 | 8100-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10050 | LWIR | 7750 ± 50 – 10050 ± 50 | 7700-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10100 | LWIR | 7750 ± 50 – 10100 ± 100 | 7700-10000 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3, 0.6 |
| STO-WBP7750~10250 | LWIR | 7750 ± 50 – 10250 ± 50 | 7800-9800 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10300 | LWIR | 7750 ± 50 – 10300 ± 50 | 7900-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~10500 | LWIR | 7750 ± 100 – 10500 ± 100 | 7950-10300 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9700 | LWIR | 7750 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7750~9980 | LWIR | 7750 ± 50 – 9980 ± 50 | 8000-9700 | T>=80% | 1500-12000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP7770~10580 | LWIR | 7770 ± 50 – 10580 ± 50 | 7950-10400 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9280 | LWIR | 7780 ± 100 – 9280 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7780~9480 | LWIR | 7780 ± 100 – 9480 ± 100 | 8100-9000 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10050 | LWIR | 7800 ± 50 – 10050 ± 50 | 8100-9700 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10100 | LWIR | 7800 ± 50 – 10100 ± 50 | 7900-10000 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10350 | LWIR | 7800 ± 70 – 10350 ± 100 | 7970-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10600 | LWIR | 7800 ± 100 – 10600 ± 100 | 8000-10400 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7800~12100 | LWIR | 7800 ± 100 – 12100 ± 100 | 8100-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7800~12200 | LWIR | 7800 ± 75 – 12200 ± 75 | 8100-11950 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP7800~14200 | LWIR | 7800 ± 100 – 14200 ± 100 | 8300-13500 | T>=85% | 1500-19000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP7800~9650 | LWIR | 7800 ± 50 – 9650 ± 50 | 8200-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3, 0.7 |
| STO-WBP7800~9700 | LWIR | 7800 ± 50 – 9700 ± 50 | 8100-9500 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850-13650 | LWIR | 7850 ± 50 – 13650 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP7850~10450 | LWIR | 7850 ± 50 – 10450 ± 50 | 8000-10100 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10600 | LWIR | 7850 ± 50 – 10600 ± 50 | 8000-10350 | T>=85% | 1000-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~10650 | LWIR | 7850 ± 100 – 10650 ± 100 | 8050-10450 | T>=90% | 500-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~13750 | LWIR | 7850 ± 50 – 13750 ± 50 | 8100-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 0.5 |
| STO-WBP7850~13900 | LWIR | 7850 ± 100 – 13900 ± 400 | 8200-13400 | T>=80% | 2000-19000 nm; T < 1% | Germanium | 1 |
| STO-WBP7850~9650 | LWIR | 7850 ± 50 – 9650 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9700 | LWIR | 7850 ± 50 – 9700 ± 50 | 8300-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9750 | LWIR | 7850 ± 50 – 9750 ± 50 | 7950-9450 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7850~9850 | LWIR | 7850 ± 50 – 9850 ± 50 | 7900-9400 | T>=90% | 400-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7800~10200 | LWIR | 7880 ± 100 – 10300 ± 100 | 8080-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7880~10400 | LWIR | 7880 ± 100 – 10400 ± 100 | 8100-10100 | T>=90% | 406-14140 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~12000 | LWIR | 7900 ± 100 – 12000 ± 100 | 8100-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP7900~12200 | LWIR | 7900 ± 100 – 12200 ± 100 | 8150-11900 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP7900~9800 | LWIR | 7900 ± 50 – 9800 ± 50 | 8300-9300 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10350 | LWIR | 7920 ± 70 – 10350 ± 100 | 8090-10150 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7920~10500 | LWIR | 7920 ± 70 – 10500 ± 100 | 8090-10300 | T>=90% | 400-16000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10050 | LWIR | 7950 ± 50 – 10050 ± 50 | 8300-9700 | T>=92% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7950~10400 | LWIR | 7950 ± 50 – 10400 ± 50 | 8500-10100 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP7950~13850 | LWIR | 7950 ± 50 – 13850 ± 50 | 8300-13300 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 0.4 |
| STO-WBP7950~9850 | LWIR | 7950 ± 50 – 9850 ± 50 | 8200-9600 | T>=90% | 1500-12000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP7980~9680 | LWIR | 7980 ± 100 – 9680 ± 100 | 8030-9530 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8000~10100 | LWIR | 8000 ± 100 – 10100 ± 100 | 8200-9900 | T>=90% | 1500-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~10700 | LWIR | 8000 ± 200 – 10700 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8000~11300 | LWIR | 8000 ± 50 – 11300 ± 50 | 8300-11200 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~11400 | LWIR | 8000 ± 50 – 11400 ± 50 | 8300-11000 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~12000 | LWIR | 8000 ± 100 – 12000 ± 100 | 8200-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8000~12200 | LWIR | 8000 ± 100 – 12200 ± 100 | 8300-11800 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5, 0.9 |
| STO-WBP8000~12400 | LWIR | 8000 ± 100 – 12400 ± 100 | 8300-12000 | T>=90% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8000~13900 | LWIR | 8000 ± 50 – 13900 ± 50 | 8300-13600 | T>=75% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8050~13850 | LWIR | 8050 ± 50 – 13850 ± 50 | 8500-13300 | T>=70% | 1500-20000 nm; T < 1.5% | Silicon | 1 |
| STO-WBP8080~9880 | LWIR | 8080 ± 100 – 9880 ± 100 | 8500-9500 | T>=90% | 3030-14140 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8100~11700 | LWIR | 8100 ± 100 – 11700 ± 100 | 8400-11400 | T>=90% | 400-12200 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~12800 | LWIR | 8100 ± 100 – 12800 ± 100 | 8300-12600 | T>=85% | 1000-15000 nm; T < 1% | Germanium | 0.5 |
| STO-WBP8100~9000 | LWIR | 8100 ± 100 – 9000 ± 100 | 8250-8850 | T>=85% | 490-10090 nm; T < 1% | Germanium | 0.9, 1 |
| STO-WBP8200-10100 | LWIR | 8200 ± 400 – 10100 ± 420 | 8800-9500 | T>=88% | 2000-12000 nm; T < 1% | Germanium | 0.5, 0.6 |
| STO-WBP8200-12000 | LWIR | 8200 ± 100 – 12000 ± 100 | 8400-11800 | T>=90% | 400-20000 nm; T < 1% | Germanium | 1 |
| STO-WBP8200~10900 | LWIR | 8200 ± 200 – 10900 ± 200 | 8600-10000 | T>=90% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP8230~12400 | LWIR | 8230 ± 150 – 12400 ± 200 | 8800-11000 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8200~9000 | LWIR | 8240 ± 50 – 9140 ± 50 | 8340-9040 | T>=90% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300-8900 | LWIR | 8300 ± 100 – 8900 ± 100 | 8400-8700 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8300~13000 | LWIR | 8300 ± 160 – 13000 ± 160 | 8800-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8300~9200 | LWIR | 8300 ± 100 – 9200 ± 100 | 8430-9090 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8300~9300 | LWIR | 8300 ± 100 – 9300 ± 100 | 8500-9100 | T>=85% | 490-10090 nm; T < 1% | Germanium | 1 |
| STO-WBP8400~13000 | LWIR | 8400 ± 150 – 13000 ± 150 | 8900-12500 | T>=75% | 7000-15000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8400~14700 | LWIR | 8400 ± 200 – 14700 ± 300 | 9000-13000 | T>=75% | 400-20000 nm; T < 1% | Silicon | 0.5 |
| STO-WBP8500-12250 | LWIR | 8500 ± 100 – 12250 ± 100 | 8700-12100 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8500-9050 | LWIR | 8500 ± 100 – 9050 ± 100 | 8650-8900 | T>=85% | 1570-14070 nm; T < 1% | Germanium | 0 |
| STO-WBP8550-12350 | LWIR | 8550 ± 50 – 12350 ± 50 | 8700-12200 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.5 |
| STO-WBP8600-12500 | LWIR | 8600 ± 150 – 12500 ± 150 | 8980-12000 | T>=85% | 1500-15500 nm; T < 1% | Germanium | 0.3, 0.8 |
| STO-WBP8700-9400 | LWIR | 8700 ± 100 – 9400 ± 100 | 8900-9300 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8770-9550 | LWIR | 8770 ± 50 – 9550 ± 50 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8800-9700 | LWIR | 8850 ± 50 – 9650 ± 50 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9500 | LWIR | 8900 ± 100 – 9500 ± 100 | 9000-9400 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9600 | LWIR | 8900 ± 100 – 9600 ± 100 | 9000-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9700 | LWIR | 8900 ± 100 – 9700 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP8900-9800 | LWIR | 8900 ± 100 – 9800 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9000-9850 | LWIR | 9000 ± 100 – 9850 ± 100 | 9100-9500 | T>=85% | 1500-13000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP9600-14800 | LWIR | 9600 ± 100 – 14800 ± 100 | 9900-14400 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP9800-15100 | LWIR | 9800 ± 100 – 15100 ± 100 | 11000-14700 | T>=85% | 400-20000 nm; T < 1% | Zinc selenide | 0.3 |
| STO-WBP10100-11100 | LWIR | 10100 ± 100 – 11100 ± 100 | 10350-10850 | T>=90% | 7600-14000 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10160-11180 | LWIR | 10160 ± 50 – 11180 ± 50 | 10310-11030 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10200-11600 | LWIR | 10200 ± 100 – 11600 ± 100 | 10600-11300 | T>=85% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10240-10840 | LWIR | 10240 ± 50 – 10840 ± 50 | 10340-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10240-11260 | LWIR | 10240 ± 50 – 11260 ± 50 | 10400-11100 | T>=90% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP10290-11490 | LWIR | 10290 ± 100 – 11490 ± 100 | 10490-11290 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10300-11400 | LWIR | 10300 ± 100 – 11400 ± 100 | 10500-11100 | T>=80% | 7000-14000 nm; T < 1% | Germanium | 0.9 |
| STO-WBP10300-11500 | LWIR | 10300 ± 120 – 11500 ± 120 | 10800-11300 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP10250-10850 | LWIR | 10340 ± 50 – 10940 ± 50 | 10440-10840 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-10840 | LWIR | 10340 ± 50 – 10840 ± 50 | 10440-10740 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10340-11040 | LWIR | 10340 ± 50 – 11040 ± 50 | 10440-10940 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10360-10860 | LWIR | 10360 ± 50 – 10860 ± 50 | 10460-10760 | T>=90% | 1060-14060 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10400-11300 | LWIR | 10400 ± 100 – 11300 ± 100 | 10700-11100 | T>=90% | 7000-14000 nm; T < 1% | Germanium | 1 |
| STO-WBP10440-11040 | LWIR | 10440 ± 50 – 11040 ± 50 | 10600-10900 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10540-11140 | LWIR | 10540 ± 50 – 11140 ± 50 | 10700-11000 | T>=80% | 590-14090 nm; T < 1% | Germanium | 0.3 |
| STO-WBP10600-11450 | LWIR | 10600 ± 100 – 11450 ± 100 | 10700-11350 | T>=85% | 7500-14000 nm; T < 1% | Germanium | 0.7 |
| STO-WBP10600-11800 | LWIR | 10600 ± 100 – 11800 ± 100 | 10980-11750 | T>=80% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11300-15600 | LWIR | 11300 ± 100 – 15600 ± 100 | 11500-15000 | T>=70% | 10080-16080 nm; T < 1% | Wedge germanium | 2 |
| STO-WBP11400-12380 | LWIR | 11400 ± 60 – 12380 ± 60 | 11550-12230 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11400-12600 | LWIR | 11490 ± 100 – 12690 ± 100 | 12000-12490 | T>=85% | 1590-16090 nm; T < 1% | Germanium | 0.8 |
| STO-WBP11500-12500 | LWIR | 11500 ± 50 – 12500 ± 50 | 11650-12350 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
| STO-WBP11570-12570 | LWIR | 11570 ± 50 – 12570 ± 50 | 11770-12370 | T>=85% | 2000-15000 nm; T < 1% | Germanium | 3 |
短波長を遮光しながら長波長の赤外エネルギーを透過する追加ロングパスモデルです。
| モデル | スペクトル領域 | カットオン (nm) | 透過率 | 透過範囲 (nm) | 遮光 | 基板 | 基板厚さ (mm) |
|---|---|---|---|---|---|---|---|
| STO-LP1500 | SWIR | 1500 ± 100 | T>=85% | 1600-5300 | 400-1400 nm; T < 1% | Sapphire | 0.3 |
| STO-LP1700 | SWIR | 1700 ± 100 | T>=80% | 1750-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP1800 | SWIR | 1800 ± 50 | T>=80% | 1850-3400 | 800-1600 nm; T < 1% | Silicon | 0.5 |
| STO-LP2200 | SWIR | 2200 ± 100 | T>=90% | 2700-3500 | 400-1800 nm; T < 1% | Silicon | 0.762 |
| STO-LP2250 | SWIR | 2250 ± 50 | T>=90% | 2400-3600 | 1500-2100 nm; T < 1% | Silicon | 1 |
| STO-LP2900 | MWIR | 2900 ± 50 | T>=90% | 3050-5100 | 1300-2600 nm; T < 1% | Zinc selenide | 0.5 |
| CUT3200 | MWIR | 3400 ± 10 | T>=90% | 3480-5350 | 1500-3266 nm; T < 1% | Germanium | 0.3 |
| CUT3500 | MWIR | 3670 ± 50 | T>=90% | 3800-5600 | 1500-3500 nm; T < 1% | Germanium | 1, 2.5 |
| STO-LP3710+DLC | MWIR | 3710 ± 50 | T>=70% | 4000-5500 | 1500-3400 nm; T < 1% | Silicon | 0.5 |
| STO-LP3730 | MWIR | 3730 ± 50 | T>=90% | 4400-4900 | 1700-3700反射; T < 1% | Germanium | 0.5, 0.7 |
| STO-LP3760 | MWIR | 3760 ± 60 | T>=90% | 3960-4800 | 1600-3480 nm; T < 1% | Germanium | 0.5 |
| STO-LP3850 | MWIR | 3850 ± 50 | T>=90% | 4000-5000 | 1500-3500 nm; T < 1% | Germanium | 0.5 |
| STO-LP4730 | MWIR | 4730 ± 200 | T>=80% | 4900-5150 | 400-4200 nm; T < 1% | Sapphire | 1 |
| STO-LP5800 | MWIR/LWIR transition | 5800 ± 150 | T>=80% | 6000-13000 | 2000-5500 nm; T < 1% | Silicon | 0.5 |
| STO-LP6200 | MWIR/LWIR transition | 6200 ± 100 | T>=90% | 6400-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3, 3.5 |
| STO-LP6300 | MWIR/LWIR transition | 6300 ± 100 | T>=90% | 6550-14500 | 1500-6100 nm; T < 1% | Germanium | 0.3 |
| STO-LP6400 | MWIR/LWIR transition | 6400 ± 100 | T>=90% | 6500-12600 | 2000-6000 nm; T < 1% | Germanium | 0.9, 3 |
| STO-LP6500 | MWIR/LWIR transition | 6500 ± 50 | T>=85% | 6800-11000 | 1500-6200 nm; T < 1% | Germanium | 0.9, 2.8, 3 |
| STO-LP7250 | MWIR/LWIR transition | 7250 ± 50 | T>=90% | 7450-11000 | 1400-7000 nm; T < 1% | Germanium | 2.5 |
| STO-LP7570 | MWIR/LWIR transition | 7570 ± 70 | T>=90% | 7770-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7675 | MWIR/LWIR transition | 7675 ± 75 | T>=90% | 8000-14000 | 1500-7550 nm; T < 1% | Germanium | 0.3 |
| STO-LP7770 | MWIR/LWIR transition | 7770 ± 70 | T>=90% | 7870-12600 | 1010-7320 nm; T < 1% | Germanium | 0.3 |
| STO-LP7950 | MWIR/LWIR transition | 7950 ± 150 | T>=85% | 8050-14000 | 190-7800 nm; T < 1% | Germanium | 1 |
| STO-LP9000 | LWIR | 9000 ± 300 | T>=90% | 9500-12500 | 400-8500 nm; T < 1% | Germanium | 0.5 |
| STO-LP10000 | LWIR | 10000 ± 70 | T>=90% | 10150-14300 | 1500-9800 nm; T < 1% | Zinc selenide | 0.5 |
| STO-LP10015 | LWIR | 10015 ± 100 | T>=85% | 10450-14500 | 1500-9800 nm; T < 1% | Germanium | 0.3 |
| STO-LP10600 | LWIR | 10600 ± 100 | T>=80% | 11000-14000 | 1500-10000 nm; T < 1% | Germanium | 2.7 |
| STO-LP10900 | LWIR | 10900 ± 100 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 1 |
| STO-LP11050 | LWIR | 11050 ± 50 | T>=80% | 11200-15400 | 1500-10750 nm; T < 1% | Germanium | 0.8, 0.9 |
| STO-LP11190 | LWIR | 11190 ± 100 | T>=80% | 11500-15700 | 1500-10750 nm; T < 1% | Germanium | 0.8, 1 |
| STO-LP11600 | LWIR | 11600 ± 100 | T>=85% | 11800-12200 | 7000-11200 nm; T < 1% | Germanium | 0.9 |
| STO-LP11700 | LWIR | 11700 ± 100 | T>=80% | 11900-12300 | 7000-11200 nm; T < 1% | Germanium | 0.8, 0.9, 1, 2.7 |
赤外用反射防止コーティングの追加範囲です。出典で確認されない限り、寸法と材料詳細は見積り段階の参考データです。
| モデル | スペクトル領域 | 透過範囲 (nm) | 平均透過率 | 基板厚さ (mm) |
|---|---|---|---|---|
| STO-AR1000~2600 | SWIR | 1000-2600 | T>=90% | 1, 1.6, 6 |
| STO-AR1000~5100 | MWIR | 1000-5100 | T>=80% | 0.5, 1 |
| STO-AR1200~5500 | MWIR | 1200-5500 | T>=85% | 0.5 |
| STO-AR1250-1650 | SWIR | 1250-1650 | T>=99% | 0.3 |
| STO-AR1500~1600 | SWIR | 1500-1600 | T>=97% | 0.3, 1 |
| STO-AR1580~6900 | MWIR | 1580-6900 | T>=85% | 0.5, 1 |
| STO-AR1600~5300 | MWIR | 1600-5300 | T>=90% | 0.5, 1 |
| STO-AR1800~10000 | MWIR/LWIR transition | 1800-10000 | T>=90% | 1.2 |
| STO-AR1800~6000 | MWIR | 1500-5000 | T>=95% | 0.5 |
| STO-AR2000~12000 | MWIR/LWIR transition | 2000-12000 | T>=85% | 0.5 |
| STO-AR2000~14000 | LWIR | 2000-14000 | T>=80% | 0.5 |
| STO-AR2000~5600 | MWIR | 2000-5600 | T>=85% | 0.3, 1 |
| STO-AR2000~6000 | MWIR | 2000-6000 | T>=90% | 1, 5 |
| STO-AR2100~5500 | MWIR | 2100-5500 | T>=90% | 0.9, 1 |
| STO-AR2300~12600 | MWIR/LWIR transition | 2300-12600 | T>=90% | 1, 1.6 |
| STO-AR2300~5500 | MWIR | 2300-5500 | T>=92% | 1 |
| STO-AR2400~14000 | LWIR | 2400-14000 | T>=80% | 0.8, 2 |
| STO-AR2500~12000 | MWIR/LWIR transition | 2500-12000 | T>=90% | 1, 1.6 |
| STO-AR2500~12600 | MWIR/LWIR transition | 2500-12600 | T>=90% | 1.6 |
| STO-AR2500~14000 | LWIR | 2500-14000 | T>=85% | 0.5 |
| STO-AR2500~3300 | MWIR | 2500-3300 | T>=90% | 0.65, 1, 3 |
| STO-AR2500~4600 | MWIR | 2500-4600 | T>=90% | 0.5 |
| STO-AR2500~4700 | MWIR | 2500-4700 | T>=90% | 0.7, 0.8, 2.9, 12 |
| STO-AR2500~6000 | MWIR | 2500-6000 | T>=85% | 0.5 |
| STO-AR2600~5200 | MWIR | 2600-5200 | T>=90% | 0.5, 4 |
| STO-AR2680~4520 | MWIR | 2680-4520 | T>=90% | 0.5, 2.8, 3 |
| STO-AR2700~5300 | MWIR | 2700-5300 | T>=95% | 0.5 |
| STO-AR2700~9100 | MWIR/LWIR transition | 2700-9100 | T>=90% | 0.5, 5 |
| STO-AR2800~4900 | MWIR | 2800-4900 | T>=90% | 0.9 |
| STO-AR2800~5500 | MWIR | 2800-5500 | T>=90% | 0.5 |
| STO-AR2850~4850 | MWIR | 2850-4850 | T>=90% | 0.5 |
| STO-AR2900~5400 | MWIR | 2900-5400 | T>=90% | 6 |
| STO-AR3000~11000 | MWIR/LWIR transition | 3000-11000 | T>=90% | 0.38, 1.6 |
| STO-AR3000~12600 | MWIR/LWIR transition | 3000-12600 | T>=90% | 0.4, 0.9, 1.6 |
| STO-AR3000~14000 | LWIR | 3000-14000 | T>=90% | 0.3, 0.6, 0.7, 0.75, 0.8, 0.9, 1 |
| STO-AR3100~3600 | MWIR | 3100-3600 | T>=90% | 1 |
| STO-AR3200~3600 | MWIR | 3200-3600 | T>=85% | 0.45, 0.9 |
| STO-AR3200~5500 | MWIR | 3200-5500 | T>=85% | 0.9, 1 |
| STO-AR3400~12500 | MWIR/LWIR transition | 3400-12500 | T>=90% | 1 |
| STO-AR3500~10000 | MWIR/LWIR transition | 3500-10000 | T>=90% | 0.5, 1 |
| STO-AR3500~5000 | MWIR | 3500-5000 | T>=95% | 0.5, 1, 1.6 |
| STO-AR3600~4800 | MWIR | 3600-4800 | T>=95% | 0.5, 1 |
| STO-AR3600~5000 | MWIR | 3600-5000 | T>=95% | 0.5 |
| STO-AR3700~4800 | MWIR | 3700-4800 | T>=90% | 0.5, 1 |
| STO-AR3700~5000 | MWIR | 3700-5000 | T>=95% | 0.9 |
| STO-AR400~1700 | NIR | 400-1700 | T>=90% | 0.85, 1 |
| STO-AR400~3000 | SWIR | 400-3000 | T>=85% | 1.5 |
| STO-AR400~880 | NIR | 400-880 | T>=90% | 0.5 |
| STO-AR420~780 | NIR | 420-780 | T>=90% | 1 |
| STO-AR4300 | IR | 4300 | T>=90% | 1 |
| STO-AR4500~13000 | LWIR | 4500-13000 | T>=90% | 0.8, 1 |
| STO-AR5500~11000 | LWIR | 5500-11000 | T>=90% | 0.8, 2.5 |
| STO-AR5500~14000 | LWIR | 5500-14000 | T>=80% | 0.5 |
| STO-AR6000~10500 | LWIR | 6000-10500 | T>=90% | 0.9, 1 |
| STO-AR6000~11000 | LWIR | 6000-11000 | T>=90% | 2.5 |
| STO-AR6000~13000 | LWIR | 6000-13000 | T>=90% | 1 |
| STO-AR6000~18000 | LWIR | 6000-18000 | T>=48% | 0.8, 1 |
| STO-AR6200~12600 | LWIR | 6200-12600 | T>=90% | 0.5, 0.6, 0.9, 3, 6 |
| STO-AR6500~11000 | LWIR | 6500-11000 | T>=95% | 1 |
| STO-AR7000~12500 | LWIR | 7000-12500 | T>=95% | 0.4, 2.5, 2.8 |
| STO-AR7000~12600 | LWIR | 7000-12600 | T>=90% | 0.7, 0.9, 1, 3 |
| STO-AR7000~14000 | LWIR | 7000-14000 | T>=90% | 1 |
| STO-AR7000~14500 | LWIR | 7000-14500 | T>=90% | 0.8, 1 |
| STO-AR7000~14600 | LWIR | 7000-14600 | T>=90% | 0.9, 1, 3 |
| STO-AR7000~16000 | LWIR | 7000-16000 | T>=90% | 0.8, 0.9, 1, 3.5 |
| STO-AR7400~10700 | LWIR | 7400-10700 | T>=95% | 2.6, 3 |
| STO-AR7400~10900 | LWIR | 7400-10900 | T>=94% | 0.8, 2.9 |
| STO-AR7400~12800 | LWIR | 7400-12800 | T>=90% | 0.9, 1 |
| STO-AR7500~10100 | LWIR | 7500-10100 | T>=90% | 0.7, 0.9, 1, 2.9, 8.7 |
| STO-AR7500~10500 | LWIR | 7500-10500 | T>=93% | 0.7, 1 |
| STO-AR7500~10700 | LWIR | 7500-10700 | T>=90% | 1 |
| STO-AR7500~11000 | LWIR | 7500-11000 | T>=90% | 2.5, 2.8 |
| STO-AR7500~13000 | LWIR | 7500-13000 | T>=90% | 0.9, 5 |
| STO-AR7500~13500 | LWIR | 7500-13500 | T>=90% | 0.8 |
| STO-AR7500~9700 | LWIR | 7500-9700 | T>=85% | 0.75 |
| STO-AR7600~12700 | LWIR | 7600-12700 | T>=93% | 1 |
| STO-AR7700~11000 | LWIR | 7700-11000 | T>=95% | 0.9, 3 |
| STO-AR7700~9300 | LWIR | 7700-9300 | T>=93% | 0.3, 0.75 |
| STO-AR7800~10000 | LWIR | 7800-10000 | T>=95% | 0.9, 1 |
| STO-AR8000~10000 | LWIR | 8000-10000 | T>=92% | 0.9, 2.7, 2.8, 3 |
| STO-AR8000~13500 | LWIR | 8000-13500 | T>=90% | 3 |
| STO-AR8000~15000 | LWIR | 8000-15000 | T>=93% | 2 |
| STO-AR800~4000 | SWIR | 800-4000 | T>=80% | 1 |
| STO-AR9000~16500 | LWIR | 9000-16500 | T>=90% | 1.6 |
| STO-AR900~1700 | SWIR | 900-1700 | T>=90% | 1.6 |
| STO-AR9500~17000 | LWIR | 9500-17000 | T>=80% | 0.7, 1.6 |
IR filters should be matched to detector material, substrate transmission, and working temperature. Do not treat all IR bands as interchangeable.
Material choice can limit usable wavelength range before coating performance is considered. Confirm substrate first for IR applications.
For thermal or gas-sensing work, specify the target absorption band, blocking range, and operating environment.
データが利用可能な近赤外・短波長赤外・中波長赤外・長波長赤外のフィルター要件をカバーしています。
基板材料により透過範囲が異なるため、対象赤外波長帯をサポートする材料を選択する必要があります。
はい。カスタム波長帯・サイズ・基板選択・コーティング仕様は赤外システムに応じてご相談いただけます。
Quality & Compliance
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Process control, inspection records, and repeatable coating workflows for production optical components.
Compliance documentation can be prepared for qualified projects and regulated supply chains.
Wavelength, FWHM, substrate, AOI, size, and mounting requirements can be reviewed with engineering.
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